Page 1
MJE15034 NPN,
MJE15035 PNP
Preferred Device
Complementary Silicon
Plastic Power Transistors
TO−220, NPN & PNP Devices
Complementary silicon plastic power transistors are designed for
use as high−frequency drivers in audio amplifiers.
Features
• h
= 100 (Min) @ IC = 0.5 Adc
FE
= 10 (Min) @ IC = 2.0 Adc
• Collector−Emitter Sustaining Voltage −
V
CEO(sus)
• High Current Gain − Bandwidth Product
fT = 30 MHz (Min) @ IC = 500 mAdc
• TO−220AB Compact Package
• Epoxy meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Machine Model: C
• Pb−Free Packages are Available*
= 350 Vdc (Min) − MJE15034, MJE15035
Human Body Model: 3B
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4.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
350 VOLTS, 50 WATTS
4
TO−220AB
1
2
3
CASE 221A
STYLE 1
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous
Base Current I
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
− Peak
TJ, T
CEO
CB
EB
I
C
B
P
P
D
D
stg
350 Vdc
350 Vdc
5.0 Vdc
4.0
8.0
1.0 Adc
50
0.40
2.0
0.016
– 65 to +150
Adc
W
W/_C
W
W/_C
_C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
R
q
JC
R
q
JA
2.5
62.5
_C/W
_C/W
MARKING DIAGRAM
MJE1503xG
AYWW
MJE1503x = Device Code
A = Location Code
Y = Year
WW = Work Week
G = Pb−Free Package
x = 4 or 5
ORDERING INFORMATION
Device Package Shipping
MJE15034 TO−220AB 50 Units / Rail
MJE15034G TO−220AB
(Pb−Free)
MJE15035 TO−220AB 50 Units / Rail
MJE15035G TO−220AB
(Pb−Free)
Preferred devices are recommended choices for future use
and best overall value.
50 Units / Rail
50 Units / Rail
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3
1 Publication Order Number:
MJE15034/D
Page 2
MJE15034 NPN, MJE15035 PNP
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
10
0
ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0)
Collector Cutoff Current (VCB = 350 Vdc, IE = 0)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 Adc, VCE = 5.0 Vdc)
ООООООООООООООООООО
ООООООООООООООООООО
(IC = 0.5 Adc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 2.0 Adc, VCE = 5.0 Vdc)
Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc)
Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, f
ООООООООООООООООООО
= 1.0 MHz)
test
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT = ⎪hfe⎪• f
T
T
A
.
test
C
Symbol
V
CEO(sus)
I
CBO
I
EBO
h
FE
ÎÎÎ
ÎÎÎ
V
CE(sat)
V
BE(on)
f
T
ÎÎÎ
Min
350
−
−
100
ÎÎ
100
50
ÎÎ
10
−
−
30
ÎÎ
Max
−
10
10
−
Î
−
−
Î
−
0.5
1.0
−
Î
100mS
Unit
Vdc
mAdc
mAdc
−
ÎÎ
ÎÎ
Vdc
Vdc
MHz
ÎÎ
60
3.0
40
2.0
20
1.0
, POWER DISSIPATION (WATTS)
D
P
0
0
0
40 60 100 120 160
20
Figure 1. Power Derating
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.1
0.07
0.05
r(t), TRANSIENT THERMAL
0.03
RESISTANCE (NORMALIZED)
0.02
0.01
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k0.1 0.50.2
0.02
T
C
T
A
80 140
T, TEMPERATURE (°C)
1.0
0.1
, COLLECTOR CURRENT (AMPS)
C
I
0.01
1.0 10 100 100
Figure 2. Active Region Safe Operating Area
Z
= r(t) R
q
JC(t)
R
= 2.5°C/W MAX
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
− TC = P
J(pk)
t, TIME (ms)
Figure 3. Thermal Response
DC
VCE, COLLECTOR−EMITTER VOLTAGE (V)
P
q
(pk)
JC
1
Z
q
JC(t)
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
2
100 200
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2
Page 3
MJE15034 NPN, MJE15035 PNP
0
V
, COLLECTOR−EMITTER VOLTAGE (V)
1000
1000
h
, DC CURRENT GAIN
100
10
FE
1.0
1000
100
TJ = 150°C
25°C
−40°C
0.01 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 4. DC Current Gain, V
CE
= 5.0 V
NPN MJE15034
TJ = 150°C
25°C
−40°C
TJ = 150°C
25°C
−40°C
100
10
, DC CURRENT GAIN
FE
h
1.0
0.01 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 5. DC Current Gain, V
CE
= 5.0 V
PNP MJE15035
1000
100
TJ = 150°C
25°C
−40°C
10
, DC CURRENT GAIN
FE
h
1.0
0.01 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 6. DC Current Gain, V
CE
= 20 V
NPN MJE15034
10
IC/IB = 10
1.0
25°C
TJ = 150°C
0.1
−40°C
CE
0.01
0.01 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS)
10
, DC CURRENT GAIN
FE
h
1.0
0.01 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 7. DC Current Gain, V
CE
= 20 V
PNP MJE15035
10
IC/IB = 10
1.0
−40°C
0.1
, COLLECTOR−EMITTER VOLTAGE (V)
CE
0.01
V
0.01 0.1 1.0 1
TJ = 150°C
25°C
IC, COLLECTOR CURRENT (AMPS)
Figure 8. V
CE(sat)
NPN MJE15034
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3
Figure 9. V
CE(sat)
PNP MJE15035
Page 4
MJE15034 NPN, MJE15035 PNP
10
IC/IB = 10
1.0
BASE−EMITTER VOLTAGE (V)
0.1
−40°C
25°C
TJ = 150°C
0.01 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 10. V
BE(sat)
NPN MJE15034
1.2
1.0
0.8
0.6
0.4
, BASE−EMITTER VOLTAGE (V)
0.2
BE(on)
V
0.0
0.01 0.1 1.0 10
−40°C
25°C
TJ = 150°C
IC, COLLECTOR CURRENT (AMPS)
10
IC/IB = 10
1.0
BASE−EMITTER VOLTAGE (V)
0.1
−40°C
25°C
TJ = 150°C
0.01 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 11. V
BE(sat)
PNP MJE15035
1.4
1.2
1.0
0.8
0.6
0.4
, BASE−EMITTER VOLTAGE (V)
0.2
BE(on)
V
0.0
0.01 0.1 1.0 10
−40°C
25°C
TJ = 150°C
IC, COLLECTOR CURRENT (AMPS)
Figure 12. V
BE(on)
NPN MJE15034
80
70
TJ = 25°C
f test = 1 MHz
60
50
40
30
20
10
0
, CURRENT BANDWIDTH PRODUCT (MHz)
T
f
IC, COLLECTOR CURRENT (AMPS)
VCE= 10 V
0.1 1.00.001 0.01
Figure 14. Typical Current Gain Bandwidth Product
NPN MJE15034
100
80
60
40
20
0
, CURRENT BANDWIDTH PRODUCT (MHz)
T
f
10
0.001 0.01
Figure 15. Typical Current Gain Bandwidth Product
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4
TJ = 25°C
f test = 1 MHz
IC, COLLECTOR CURRENT (AMPS)
Figure 13. V
BE(on)
PNP MJE15035
VCE= 10 V
0.1 1.0
PNP MJE15035
10
Page 5
MJE15034 NPN, MJE15035 PNP
PACKAGE DIMENSIONS
TO−220 THREE−LEAD
TO−220AB
CASE 221A−09
ISSUE AA
SEATING
−T−
PLANE
B
4
Q
123
F
T
A
U
C
S
H
K
Z
L
V
R
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE
ALL BODY AND LEAD IRREGULARITIES
ARE ALLOWED.
DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 −−− 1.15 −−−
Z −−− 0.080 −−− 2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
MILLIMETERSINCHES
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MJE15034/D
5
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