Datasheet MJE15032, MJE15032G, MJE15033, MJE15033G Datasheet (ON Semiconductor)

MJE15032 (NPN),

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MJE15033 (PNP)

Preferred Devices

Complementary Silicon
Plastic Power Transistors

Designed for use as high−frequency drivers in audio amplifiers.

Features

• DC Current Gain Specified to 5.0 Amperes

hFE= 70 (Min) @ IC = 0.5 Adc

= 10 (Min) @ IC = 2.0 Adc

• Collector−Emitter Sustaining Voltage −

V

CEO(sus)

• High Current Gain − Bandwidth Product

fT = 30 MHz (Min) @ IC = 500 mAdc

• TO−220AB Compact Package

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Machine Model C

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous

Base Current
Total Power Dissipation @ TC = 25_C

ООООООООО

Derate above 25_C

Total Power Dissipation @ TA = 25_C

Derate above 25_C

Operating and Storage Junction

ООООООООО

Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance,

Junction−to−Case

Thermal Resistance,

ООООООООО

Junction−to−Ambient

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

= 250 Vdc (Min) − MJE15032, MJE15033

Human Body Model 3B

Rating

− Peak

Symbol

V

CEO

V

CB

V

EB

I

C

I

B

P

D

ÎÎ

P

D

TJ, T

ÎÎ

Symbol

R

q

JC

R

q

JA

ÎÎ

stg

Value

250
250

ÎÎ

0.40

0.016

–65 to

ÎÎ

+150

Max

62.5

ÎÎ

5.0

8.0
16

2.0
50

2.0

2.5

Unit

Vdc
Vdc
Vdc
Adc

Adc

W

Î

W/_C

W

W/_C

_C

Î

Unit

_C/W

_C/W

Î

http://onsemi.com

8.0 AMPERES

POWER TRANSISTORS

COMPLEMENTARY SILICON

250 VOLTS, 50 WATTS

MARKING
DIAGRAM

4

A YW

TO−220

CASE 221A

STYLE 1

1

2

3

MJE1503x= Specific Device Code
x = 2 or 3
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Package

ORDERING INFORMATION

Device Package Shipping

MJE15032 TO−220
MJE15032G TO−220

MJE15033 TO−220 50 Units/Rail
MJE15033G TO−220

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

(Pb−Free)

(Pb−Free)

MJE1503xG

AKA

50 Units/Rail
50 Units/Rail

50 Units/Rail

†

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2005

June, 2005 − Rev. 3

Preferred devices are recommended choices for future use

and best overall value.

1 Publication Order Number:

MJE15032/D

MJE15032 (NPN), MJE15033 (PNP)

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ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

= 10 mAdc, IB = 0)

(I

C

ООООООООООООООООООООО

Collector Cutoff Current

(VCB = 250 Vdc, IE = 0)

Emitter Cutoff Current

ООООООООООООООООООООО

(VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 0.5 Adc, VCE = 5.0 Vdc)

ООООООООООООООООООООО

(IC = 1.0 Adc, VCE = 5.0 Vdc)

ООООООООООООООООООООО

(IC = 2.0 Adc, VCE = 5.0 Vdc)

Collector−Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 0.1 Adc)

ООООООООООООООООООООО

Base−Emitter On Voltage

(IC = 1.0 Adc, VCE = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2)

ООООООООООООООООООООО

(IC = 500 mAdc, VCE = 10 Vdc, f

= 1.0 MHz)

test

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2. fT = ⎪hfe⎪• f

test

.

Symbol

V

CEO(sus)

ÎÎ

I

CBO

I

EBO

ÎÎ

h

FE

ÎÎ

ÎÎ

V

CE(sat)

ÎÎ

V

BE(on)

f

T

ÎÎ

Min

250

ÎÎ

−

−

ÎÎ

70

ÎÎ

50

ÎÎ

10

−

ÎÎ

−

30

ÎÎ

Max

−

Î

10

10

Î

−

Î

−

Î

−

0.5

Î

1.0

−

Î

Unit

Vdc

Î

mAdc

mAdc

Î

Î

Î

Vdc

Î

Vdc

MHz

Î

−

http://onsemi.com

2

1.0

0.7
D = 0.5

0.5

0.3

0.2

0.1

0.07

0.05

r(t), TRANSIENT THERMAL

0.03

RESISTANCE (NORMALIZED)

0.02

0.01

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k0.1 0.50.2

0.02

MJE15032 (NPN), MJE15033 (PNP)

Z

= r(t) R

q

JC(t)

R

q

JC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

J(pk)

t, TIME (ms)

Figure 1. Thermal Response

q

− TC = P

(pk)

JC

1

Z

= 2.5°C/W MAX

q

JC(t)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

100 200

2

100

10

1.0

0.1

, COLLECTOR CURRENT (AMPS)

C

I

0.01

1.0

100 ms

50ms

250ms

10 1000

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

10ms

100

Figure 2. MJE15032 & MJE15033

Safe Operating Area

T

T

C

A

60

3.0

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − V

CE

limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.

The data of Figures 2 and 4 is based on T

J(pk)

= 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
< 150_C. T

may be calculated from the data in Figure 1.

J(pk)

J(pk)

At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

, POWER DISSIPATION (WATTS)

D

P

2.0

1.0

40

T

C

20

0

0

0

40 60 100 120 160

20

T, TEMPERATURE (°C)

T

A

80 140

Figure 3. Power Derating

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3

MJE15032 (NPN), MJE15033 (PNP)

NPN − MJE15032 PNP − MJE15033

CE(sat) IC/IB

CE(sat) IC/IB

1000

150°C

25°C

100

−55°C

1000

100

, DC CURRENT GAIN

FE

h

1.0

10

0.1

IC, COLLECTOR CURRENT (AMPS)

1.0

, DC CURRENT GAIN

10

FE

h

10

1.0

0.1

Figure 4. NPN − MJE15032
V

= 5 V DC Current Gain

CE

10

1.0

V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

1.0

10

−55°C

25°C

150°C

150°C

−55°C

IC, COLLECTOR CURRENT (AMPS)

Figure 5. PNP − MJE15033
V

= 5 V DC Current Gain

CE

−55°C

25°C

150°C

1.0

25°C

10

V, VOLTAGE (VOLTS)

1.0

0.1

0.01

0.1

V, VOLTAGE (VOLTS)

0.1

100

1.0

0.1

0.01

1.0 100.1

IC, COLLECTOR CURRENT (AMPS)

Figure 7. PNP − MJE15033

V

= 5 V V

CE

10

IC, COLLECTOR CURRENT (AMPS)IC, COLLECTOR CURRENT (AMPS)

BE(on)

−55°C

Curve

25°C

150°C

100.1 1.0

Figure 9. PNP − MJE15033

V

= 10

0.1
IC, COLLECTOR CURRENT (AMPS)

1.0 10

Figure 6. NPN − MJE15032

V

= 5 V V

CE

10

BE(on)

1.0

Curve

150°C

25°C

−55°C

100.1

Figure 8. NPN − MJE15032

V

= 10

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4

MJE15032 (NPN), MJE15033 (PNP)

NPN − MJE15032 PNP − MJE15033

100

100

V, VOLTAGE (VOLTS)

, BASE EMITTER VOLTAGE (VOLTS)

BE

V

1.0

0.1

0.01

1.0

0.1

10

25°C

0.1

IC, COLLECTOR CURRENT (AMPS)

Figure 10. NPN − MJE15032

V

CE(sat) IC/IB

10

−55°C

25°C

150°C

0.1

IC, COLLECTOR CURRENT (AMPS)

= 20

Figure 12. NPN − MJE15032

V

BE(sat) IC/IB

= 10

150°C

−55°C

10

1.0

V, VOLTAGE (VOLTS)

0.1

0.01

101.0
IC, COLLECTOR CURRENT (AMPS)

Figure 11. PNP − MJE15033

V

CE(sat) IC/IB

10

−55°C

1.0

25°C

150°C

, BASE EMITTER VOLTAGE (VOLTS)

BE

V

101.0

0.1

0.1

IC, COLLECTOR CURRENT (AMPS)

= 20

Figure 13. PNP − MJE15033

V

BE(sat) IC/IB

= 10

150°C

25°C

−55°C

100.1 1.0

101.0

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5

MJE15032 (NPN), MJE15033 (PNP)

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AA

SEATING

−T−

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R
J

G

D

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 −−− 1.15 −−−
Z −−− 0.080 −−− 2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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MJE15032/D

6