Datasheet mje15032-33 Datasheet

Î

ON Semiconductor

Complementary Silicon Plastic Power Transistors

. . . designed for use as high–frequency drivers in audio amplifiers.

• DC Current Gain Specified to 5.0 Amperes

hFE = 50 (Min) @ IC = 0.5 Adc

= 10 (Min) @ IC = 2.0 Adc

• Collector–Emitter Sustaining Voltage —

V

CEO(sus)

• High Current Gain — Bandwidth Product

= 30 MHz (Min) @ IC = 500 mAdc

f

T

• TO–220AB Compact Package

MAXIMUM RATINGS

ОООООООООО

Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous

ОООООООООО

Base Current Total Power Dissipation @ TC = 25C

Derate above 25C

Total Power Dissipation @ TA = 25C

ОООООООООО

Derate above 25C

Operating and Storage Junction

Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

= 250 Vdc (Min) — MJE15032, MJE15033

Rating

— Peak

T

A

T

C

Symbol

ÎÎ

V

CEO

V

CB

V

EB

I

C

ÎÎ

I

B

P

D

P

D

ÎÎ

TJ, T

stg

Symbol

R

θ

JC

R

θ

JA

ООООО

MJE15032 MJE15033

250 250

5.0

8.0 16

2.0 50

0.40

2.0

0.016

–65 to +150

Max

2.5

62.5

Unit

Î

Vdc Vdc Vdc Adc

Î

Adc

Watts W/C

Watts

Î

W/C

C

Unit

C/W C/W

NPN

MJE15032

PNP

MJE15033

*ON Semiconductor Preferred Device

8.0 AMPERES

POWER TRANSISTORS

COMPLEMENTARY

SILICON

250 VOLTS

50 WATTS

CASE 221A–09

TO–220AB

*

60

3.0

40

2.0

, POWER DISSIPATION (WATTS)

D

P

1.0

20

0

40 60 100 120 160

20

T

A

80 140

T, TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2001

April, 2001 – Rev. 1

1 Publication Order Number:

T

C

MJE15032/D

MJE15032 MJE15033

Î

ELECTRICAL CHARACTERISTICS (T

= 25C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(I

= 10 mAdc, IB = 0) MJE15032, MJE15033

C

ОООООООООООООООООООО

Collector Cutoff Current

= 150 Vdc, IE = 0) MJE15032, MJE15033

(V

CB

ОООООООООООООООООООО

Emitter Cutoff Current

(V

= 5.0 Vdc, IC = 0)

BE

ON CHARACTERISTICS (1)

DC Current Gain

ОООООООООООООООООООО

(I

= 0.5 Adc, VCE = 5.0 Vdc)

C

(I

= 1.0 Adc, VCE = 5.0 Vdc)

C

ОООООООООООООООООООО

= 2.0 Adc, VCE = 5.0 Vdc)

(I

C

Collector–Emitter Saturation Voltage

ОООООООООООООООООООО

(I

= 1.0 Adc, IB = 0.1 Adc)

C

Base–Emitter On Voltage

(I

= 1.0 Adc, VCE = 5.0 Vdc)

C

ОООООООООООООООООООО

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product (2)

(I

= 500 mAdc, VCE = 10 Vdc, f

C

= 1.0 MHz)

test

(1) Pulse Test: Pulse Width  300 µs, Duty Cycle  2.0%. (2) f

= hfe• f

T

test

.

Symbol

V

CEO(sus)

ÎÎÎ

I

CBO

ÎÎÎ

I

EBO

h

FE

ÎÎÎ

V

CE(sat)

ÎÎÎ

V

BE(on)

ÎÎÎ

f

T

Min

250

Î

—

Î

—

Î

50 50

Î

10 —

Î

—

Î

30

Max

—

ÎÎ

10

ÎÎ

10

ÎÎ

— —

ÎÎ

—

0.5

ÎÎ

1.0

ÎÎ

—

Unit

Vdc

Î

µAdc

Î

µAdc

—

Î

Vdc

Î

Vdc

Î

MHz

1.0

0.7 D = 0.5

0.5

0.3

0.2

0.1

0.07

0.05

r(t), TRANSIENT THERMAL

0.03

RESISTANCE (NORMALIZED)

0.02

0.01

0.2

0.1

0.05

0.02

0.01 SINGLE PULSE

0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k0.1 0.50.2

0.02

Z

= r(t) R

θ

JC(t)

R

= 1.56°C/W MAX

θ

JC

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

- TC = P

J(pk)

t, TIME (ms)

Figure 2. Thermal Response

P

θ

JC

1

Z

θ

(pk)

JC(t)

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

100 200

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MJE15032 MJE15033

)

100

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

1.0

100 µs

10

250ms

50ms

10ms

breakdown. Safe operating area curves indicate IC – V limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate.

The data of Figures 3 and 4 is based on T TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T

0.1

, COLLECTOR CURRENT (AMPS)

C

I

< 150C. T Figure 2. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the

0.01

1.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10 1000

100

Figure 3. MJE15032 & MJE15033

Safe Operating Area

NPN — MJE15032 PNP — MJE15033

1000

150°C

25°C

100

-55°C

limitations imposed by second breakdown.

1000

100

150°C

-55°C

J(pk)

may be calculated from the data in

J(pk)

25°C

CE

= 150C;

J(pk)

, DC CURRENT GAIN

FE

h

V, VOLTAGE (VOLTS)

1.0

0.1

10

0.1

IC, COLLECTOR CURRENT (AMPS)

1.0

Figure 4. NPN — MJE15032

VCE = 5 V DC Current Gain

10

-55°C

25°C

150°C

0.1 IC, COLLECTOR CURRENT (AMPS)

1.0 10

, DC CURRENT GAIN

10

FE

h

1.0

10

0.1

, COLLECTOR CURRENT (AMPS)

I

C

1.0

10

Figure 5. PNP — MJE15033

VCE = 5 V DC Current Gain

10

1.0

V, VOLTAGE (VOLTS)

0.1

-55°C

25°C

150°C

1.0 100.1

IC, COLLECTOR CURRENT (AMPS)

Figure 6. NPN — MJE15032

V

= 5 V V

CE

BE(on

Curve

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Figure 7. PNP — MJE15033

V

= 5 V V

CE

BE(on)

Curve

MJE15032 MJE15033

NPN — MJE15032 PNP — MJE15033

V, VOLTAGE (VOLTS)

10

1.0

0.1

0.01

100

10

1.0

25°C

1.0

Figure 8. NPN — MJE15032

V

CE(sat) IC/IB

= 10

25°C

150°C

-55°C

150°C

-55°C

100

10

1.0

V, VOLTAGE (VOLTS)V, VOLTAGE (VOLTS)

0.1

0.01

100.1

IC, COLLECTOR CURRENT (AMPS)IC, COLLECTOR CURRENT (AMPS)

25°C

-55°C 150°C

100.1 1.0

Figure 9. PNP — MJE15033

= 10

150°C

25°C

-55°C

100

1.0

V

CE(sat) IC/IB

10

V, VOLTAGE (VOLTS)

, BASE EMITTER VOLTAGE (VOLTS)

BE

V

0.1

0.01

10

1.0

0.1

-55°C 25°C

150°C

, COLLECTOR CURRENT (AMPS)

I

C

Figure 10. NPN — MJE15032

V

CE(sat) IC/IB

IC, COLLECTOR CURRENT (AMPS)

= 20

Figure 12. NPN — MJE15032

V

BE(sat) IC/IB

= 10

0.1

0.01

101.0 IC, COLLECTOR CURRENT (AMPS)

100.1 1.0

Figure 11. PNP — MJE15033

V

CE(sat) IC/IB

10

-55°C

1.0

25°C

150°C

, BASE EMITTER VOLTAGE (VOLTS)

BE

V

101.0

0.1

, COLLECTOR CURRENT (AMPS)

I

C

= 20

101.0

Figure 13. PNP — MJE15033

V

BE(sat) IC/IB

= 10

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MJE15032 MJE15033

PACKAGE DIMENSIONS

TO–220AB

CASE 221A–09

ISSUE AA

SEATING

–T–

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R J

G

D

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04

MILLIMETERSINCHES

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Notes

MJE15032 MJE15033

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Notes

MJE15032 MJE15033

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MJE15032 MJE15033

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

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