Datasheet MJE15031G Specification

MJE15028, MJE15030 (NPN),
MJE15029, MJE15031 (PNP)

Complementary Silicon
Plastic Power Transistors

These devices are designed for use as high−frequency drivers in

audio amplifiers.

http://onsemi.com

Features

• High Current Gain − Bandwidth Product

• TO−220 Compact Package

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

MJE15028G, MJE15029G
MJE15030G, MJE15031G

Collector−Base Voltage

MJE15028G, MJE15029G

MJE15030G, MJE15031G
Emitter−Base Voltage V
Collector Current − Continuous I
Collector Current − Peak I
Base Current I
Total Device Dissipation

= 25_C

@ T

C

Derate above 25°C
Total Device Dissipation

= 25_C

@ T

C

Derate above 25°C
Operating and Storage Junction

Temperature Range

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

V

CEO

V

CM

P

P

TJ, T

CB

EB
C

B

D

D

stg

120
150

120
150

5.0 Vdc

8.0 Adc
16 Adc

2.0 Adc

50

0.40

2.0

0.016

−65 to +150

Vdc

Vdc

W

W/_C

W

W/_C

_C

8 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

120−150 VOLTS, 50 WATTS

NPNPNP

COLLECTOR

2,4

1

3

EMITTER

TO−220

STYLE 1

1

BASE

COLLECTOR

2,4

BASE

3

EMITTER

4

CASE 221A

1

2

3

MARKING DIAGRAM

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2013

September, 2013 − Rev. 6

R

q

JC

R

q

JA

2.5

62.5

_C/W
_C/W

1 Publication Order Number:

MJE150xxG

AY WW

MJE150xx = Device Code

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

x = 28, 29, 30, or 31

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

MJE15028/D

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(I

= 10 mAdc, IB = 0)

C

MJE15028, MJE15029
MJE15030, MJE15031

Collector Cutoff Current

(V

= 120 Vdc, IB = 0)

CE

MJE15028, MJE15029

= 150 Vdc, IB = 0)

(V

CE

MJE15030, MJE15031

Collector Cutoff Current

(V

= 120 Vdc, IE = 0)

CB

MJE15028, MJE15029

(VCB = 150 Vdc, IE = 0)

MJE15030, MJE15031

Emitter Cutoff Current

(V

= 5.0 Vdc, IC = 0)

BE

ON CHARACTERISTICS (Note 1)

DC Current Gain

(I

= 0.1 Adc, VCE = 2.0 Vdc)

C

(IC = 2.0 Adc, VCE = 2.0 Vdc)

= 3.0 Adc, VCE = 2.0 Vdc)

(I

C

(I

= 4.0 Adc, VCE = 2.0 Vdc)

C

DC Current Gain Linearity

(V

From 2.0 V to 20 V, IC From 0.1 A to 3 A)

CE

(NPN to PNP)

Collector−Emitter Saturation Voltage

(I

= 1.0 Adc, IB = 0.1 Adc)

C

Base−Emitter On Voltage

(I

= 1.0 Adc, VCE = 2.0 Vdc)

C

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2)

(IC = 500 mAdc, VCE = 10 Vdc, f

= 10 MHz)

test

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

2. fT = ⎪hfe⎪• f

test

.

Symbol Min Max Unit

V

CEO(sus)

I

CEO

I

CBO

I

EBO

h

FE

h

FE

120
150

−

−

−

−

− 10

40
40
40
20

Typ

2

−

−

0.1

0.1

10
10

−

−

−

−

Vdc

mAdc

mAdc

mAdc

3

V

CE(sat)

V

BE(on)

− 0.5

− 1.0

f

T

30 −

Vdc

Vdc

MHz

−

, POWER DISSIPATION (WATTS)

D

P

3.0

2.0

1.0

T

T

C

A

60

40

T

C

20

0

0

0

20

40 60 100 120 160

T

A

80 140

T, TEMPERATURE (°C)

Figure 1. Power Derating

http://onsemi.com

2

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)

1.0

0.7
D = 0.5

0.5

0.3

0.2

0.1

0.07

0.05

r(t), TRANSIENT THERMAL

0.03

RESISTANCE (NORMALIZED)

0.02

0.01

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k0.1 0.50.2

0.02

Z

= r(t) R

q

JC(t)

R

q

JC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

J(pk)

t, TIME (ms)

q

- TC = P

JC

1

(pk)

= 1.56°C/W MAX

Figure 2. Thermal Response

P

(pk)

t

1

t

Z

q

JC(t)

2

DUTY CYCLE, D = t1/t

100 200

2

20
16

10

1.0

0.1

, COLLECTOR CURRENT (AMP)

C

I

0.02

2.0

BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN
LIMITED @ T

5.0 10 150

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

= 25°C

C

20 120

dc

100 ms

5ms

MJE15028
MJE15029

MJE15030
MJE15031

Figure 3. Forward Bias Safe Operating Area

8.0

5.0

IC/IB = 10
T

= 25°C

C

3.0

2.0

, COLLECTOR CURRENT (AMP)

C

I

1.0

0

100 110 150

0

120 140

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

130

V

5 V

3 V

1.5 V
0 V

Figure 4. Reverse−Bias Switching

Safe Operating Area

50

BE(off)

= 9 V

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I

− V

C

CE

limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.

The data of Figures 3 and 4 is based on T
T

is variable depending on conditions. Second breakdown

C

pulse limits are valid for duty cycles to 10% provided T
< 150_C. T

may be calculated from the data in Figure 2.

J(pk)

J(pk)

= 150_C;

J(pk)

At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

1000

500

200

100

50

C, CAPACITANCE (pF)

30

20

10

3.0
V

R

Figure 5. Capacitances

Cib (NPN)
Cib (PNP)

, REVERSE VOLTAGE (VOLTS)

50

Cob (PNP)

Cob (NPN)

10030107.05.01.5

150

http://onsemi.com

3

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)

NPN — MJE15028 MJE15030 PNP — MJE15029 MJE15031

100

50

30

VCE = 10 V

20

10

, SMALL SIGNAL CURRENT GAIN

fe

h

5.0

0.5

= 0.5 A

I

C

= 25°C

T

C

1.0 3.0 10

0.7

2.0 7.0

PNP

NPN

5.0

f, FREQUENCY (MHz)

Figure 6. Small−Signal Current Gain

1K

500

200
150

100

70
50

, DC CURRENT GAIN

FE

h

30

TJ = 150°C

TJ = 25°C

TJ = -55°C

20

VCE = 2.0 V

100

90

(PNP)

(NPN)

60

50

20

10

0

, CURRENT GAIN-BANDWIDTH PRODUCT (MHz)

T

0.1 5.0

f

0.2

0.5 2.0

IC, COLLECTOR CURRENT (AMP)

Figure 7. Current Gain−Bandwidth Product

1K

500

TJ = 150°C

200

100

50

, DC CURRENT GAIN

FE

h

20

TJ = 25°C

TJ = -55°C

1.0 10

VCE = 2 V

V, VOLTAGE (VOLTS)

1.6

1.2

1.0

0.6

0.2

10

0.2

1.0 5.02.00.5

100.1

10

100.1 0.2 1.0 5.02.00.5

IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)

Figure 8. DC Current Gain

NPN PNP

0.1

TJ = 25°C

V

@ IC/IB = 10

BE(sat)

V

@ VCE = 2.0 V

BE(on)

V

= IC/IB = 20

CE(sat)

, COLLECTOR CURRENT (AMP)

I

C

IC/IB = 10

100.2 1.0 5.02.00.5 100.1 0.2 1.0 5.02.00.5

V, VOLTAGE (VOLTS)

1.8

1.4

1.0

0.8

0.4

TJ = 25°C

V

@ IC/IB = 10

BE(sat)

V

@ VCE = 2.0 V

BE(on)

V

= IC/IB = 20

CE(sat)

0

IC/IB = 10

IC, COLLECTOR CURRENT (AMP)

Figure 9. “On” Voltage

http://onsemi.com

4

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)

1.0

0.5

0.2

tr (PNP)

VCC = 80 V

= 10

I

C/IB

= 25°C

T

J

t

(NPN, PNP)

d

0.1

t, TIME (s)μ

0.05

0.03

tr (NPN)

0.02

0.01

0.1

100.2 1.0 5.02.00.5 100.1 0.2 0.3 5.02.00.5

IC, COLLECTOR CURRENT (AMP)

Figure 10. T urn−On Times

ORDERING INFORMATION

Device Package Shipping

MJE15028G TO−220

MJE15029G TO−220

MJE15030G TO−220

MJE15031G TO−220

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

10

VCC = 80 V

5.0

C/IB

ts (NPN) TJ = 25°C

B2

= 10, IB1 = I

I

3.0

2.0

ts (PNP)

1.0

t, TIME (s)μ

0.5

0.2

tf (PNP)

tf (NPN)

0.1

, COLLECTOR CURRENT (AMP)

I

C

Figure 11. Turn−Off Times

50 Units / Rail

50 Units / Rail

50 Units / Rail

50 Units / Rail

http://onsemi.com

5

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)

P

al

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AG

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

SEATING

−T−

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R
J

G

D

N

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.036 0.64 0.91

F 0.142 0.161 3.61 4.09
G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10

J 0.014 0.025 0.36 0.64
K 0.500 0.562 12.70 14.27

L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39

T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---

Z --- 0.080 --- 2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to m ake c hanges w ithout f urt her n otice t o a ny p roducts h erein. S CILLC m akes n o warrant y, representation or guarantee r egar ding t he s uit ability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequent ial o r i ncidental d amages. “ Typical” parameters which m ay be provided in SCILLC d ata s heets a nd/or s pecifications c an a nd do vary in diff erent a pplicat ions
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the r ights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the b ody, or other applications int ended t o s upport o r sustain life, or for a ny o t her a pplicat ion i n w hich the failure of the SCILLC product c ould cr eate a s it uation w here
personal injury or death may occur. S hould B uyer p urchase o r u se S CILLC p r oduct s for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, e mployees, s ubsidiaries, a f filiates, a nd d istributors h armless a gainst all claims, costs, d amages, a nd e xpenses, a nd r easonable a ttorney fees arising out o f, d irectly o r indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim a lleges t hat SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

UBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [e-mail]

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: [phone]

Japan Customer Focus Center

Phone: 81−3−5817−1050

http://onsemi.com

ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your loc
Sales Representative

MJE15028/D

6