Page 1
3
IS / IECQC 700000
IS / IECQC 750100
TO-220 Plastic Package
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
MJE15028, MJE15030
MJE15029, MJE15031
MJE15028, 15030 NPN PLASTIC POWER TRANSISTORS
MJE15029, 15031 PNP PLASTIC POWER TRANSISTORS
High frequency Drivers in Audio Amplifiers
C
B
F
E
H
A
O
1
N
23
L
O
K
D
G
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Collector current I
Total power dissipation up to T
Junction temperature T
Collector-emitter saturation voltage
= 1A; IB = 0.1A V
I
C
D.C. current gain
= 0.1 A; VCE = 2 V h
I
C
RATINGS (at T
Limiting values
Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
=25°C unless otherwise specified) 15028 15030
A
J
M
= 25°C P
C
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
DIM MIN. MA X.
A 14.42 16.51
B 9.63 10.67
C 3 .5 6 4.8 3
D0.90
E 1 .1 5 1 .4 0
F 3.7 5 3 .8 8
G 2 .2 9 2 .7 9
H 2 .5 4 3.4 3
J0.56
K 12.70 14.73
L 2.8 0 4.0 7
M 2.0 3 2 .9 2
N 31.24
ODEG 7
All dim insions in m m .
15028 15030
15029 15031
CBO
CEO
C
tot
j
CEsat
FE
CBO
CEO
max. 120 150 V
max. 120 150 V
max. 8.0 A
max. 50 W
max. 150 °C
max. 0.5 V
min. 40
15029 15031
max. 120 150 V
max. 120 150 V
4
Page 2
MJE15028, MJE15030
http://www.bocasemi.com
MJE15029, MJE15031
Emitter base voltage (open collector) V
Collector current I
Collector current (Peak value) I
Base current I
Total power dissipation up to T
= 25°C P
C
EBO
C
C
B
tot
max. 5.0 V
max. 8.0 A
max. 16 A
max. 2.0 A
max. 50 W
Derate above 25°C max. 0.4
Total power dissipation up to TA = 25°C P
tot
max. 2.0 W
Derate above 25°C max. 0.016
Junction temperature T
Storage temperature T
j
stg
max. 150
–65 to +150
THERMAL RESISTANCE
From junction to case R
From junction to ambient R
th j–c
th j–a
= 2.5
= 62.5
CHARACTERISTICS
T
= 25°C unless otherwise specified
amb
15028 15030
15029 15031
Collector cutoff current
= 0; VCE = 120V I
I
B
= 0; VCE = 150V I
I
B
= 0; VCB = 120V I
I
E
= 0; VCB = 150V I
I
E
CEO
CEO
CBO
CBO
max. 0.1 – mA
max. – 0.1 mA
max. 10 – µA
max. – 10 µA
Emitter cut-off current
I
= 0; VEB = 5V I
C
EBO
max. 10 µA
Breakdown voltages
I
= 10 mA; IB = 0 V
C
I
= 1 mA; IE = 0 V
C
= 1 mA; IC = 0 V
I
E
CEO(sus)
CBO
EBO
* min. 120 150 V
min. 120 150 V
min. 5.0 V
Saturation voltage
I
= 1 A; IB = 0.1 A V
C
* max. 0.5 V
CEsat
Base emitter on voltage
I
= 1A; VCE = 2V V
C
* max. 1.0 V
BE(on)
D.C. current gain
I
= 0.1 A; VCE = 2 V hFE* min. 40
C
I
= 2 A; VCE = 2 V hFE* min. 40
C
I
= 3 A; VCE = 2 V hFE* min. 40
C
I
= 4 A; VCE = 2 V hFE* min. 20
C
Transition frequency f = 10 MHz
I
= 500 mA; VCE = 10 V fT(1) min. 30 MHz
C
W/°C
W/°C
ºC
ºC
°C/W
°C/W
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%.
(1) f
= |hfe|• f
T
test
Loading...