Datasheet MJE15028, MJE15030, MJE15031, MJE15029 Datasheet (ON Semiconductor)

MJE15028, MJE15030 (NPN)
MJE15029, MJE15031 (PNP)

Preferred Device

Complementary Silicon
Plastic Power Transistors

These devices are designed for use as high−frequency drivers in

audio amplifiers.

Features

• DC Current Gain Specified to 4.0 Amperes

hFE= 40 (Min) @ IC = 3.0 Adc

= 20 (Min) @ IC = 4.0 Adc

• Collector−Emitter Sustaining Voltage −

V

CEO(sus)

• High Current Gain − Bandwidth Product

fT = 30 MHz (Min) @ IC = 500 mAdc

• TO−220AB Compact Package

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage V
Collector Current − Continuous

Base Current I
Total Device Dissipation @ TC = 25_C

Derate above 25°C
Total Device Dissipation @ TC = 25_C

Derate above 25°C
Operating and Storage Junction

Temperature Range

THERMAL CHARACTERISTICS

Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

= 120 Vdc (Min); MJE15028, MJE15029
= 150 Vdc (Min); MJE15030, MJE15031

Rating Symbol Value Unit

V
MJE15028, MJE15029
MJE15030, MJE15031

MJE15028, MJE15029
MJE15030, MJE15031

− Peak

Characteristics Symbol Max Unit

CEO

V

I

CM

P

P

TJ, T

R
R

120
150

CB

EB

I

C

B

D

D

stg

q

JC

q

JA

120
150

5.0 Vdc

8.0
16

2.0 Adc
50

0.40

2.0

0.016

−65 to
+150

2.5

62.5

Vdc

Vdc

Adc

W

W/_C

W

W/_C

_C

_C/W
_C/W

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8 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

120−150 VOLTS, 50 WATTS

TO−220AB

CASE 221A−09

2

3

MARKING DIAGRAM

MJE150xx = Device Code

G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week

STYLE 11

MJE150xxG

AY WW

x = 28, 29, 30, or 31

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2006

February, 2006 − Rev. 4

1 Publication Order Number:

See detailed ordering and shipping information in the package

ORDERING INFORMATION

dimensions section on page 5 of this data sheet.

Preferred devices are recommended choices for future use
and best overall value.

MJE15028/D

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

= 10 mAdc, IB = 0) MJE15028, MJE15029

(I

C

ООООООООООООООООООО

MJE15030, MJE15031

Collector Cutoff Current

ООООООООООООООООООО

(VCE = 120 Vdc, IB = 0) MJE15028, MJE15029
(VCE = 150 Vdc, IB = 0) MJE15030, MJE15031

ООООООООООООООООООО

Collector Cutoff Current

(VCB = 120 Vdc, IE = 0) MJE15028, MJE15029
(VCB = 150 Vdc, IE = 0) MJE15030, MJE15031

ООООООООООООООООООО

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ООООООООООООООООООО

ON CHARACTERISTICS (Note 1)

DC Current Gain

ООООООООООООООООООО

(IC = 0.1 Adc, VCE = 2.0 Vdc)
(IC = 2.0 Adc, VCE = 2.0 Vdc)

ООООООООООООООООООО

(IC = 3.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 2.0 Vdc)

ООООООООООООООООООО

DC Current Gain Linearity

(VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A)

ООООООООООООООООООО

(NPN to PNP)

Collector−Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 0.1 Adc)

ООООООООООООООООООО

Base−Emitter On Voltage

(IC = 1.0 Adc, VCE = 2.0 Vdc)

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2)

(IC = 500 mAdc, VCE = 10 Vdc, f

ООООООООООООООООООО

= 10 MHz)

test

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2. fT = ⎪hfe⎪• f

test

.

Symbol

V

CEO(sus)

ÎÎÎ

I

CEO

ÎÎÎ

ÎÎÎ

I

CBO

ÎÎÎ

I

EBO

ÎÎÎ

h

FE

ÎÎÎ

ÎÎÎ

ÎÎÎ

h

FE

ÎÎÎ

V

CE(sat)

ÎÎÎ

V

BE(on)

f

T

ÎÎÎ

Min

120

ÎÎ

150

ÎÎ

−

−

ÎÎ

−

ÎÎ

−

−

ÎÎ

ÎÎ

40
40

ÎÎ

40

ÎÎ

20

Max

−

Î

−

Î

0.1

0.1

Î

10

Î

10
10

Î

Î

−

−

Î

−

Î

−

Typ

30

2
3

−

−

0.5

Î

1.0

−

Î

ÎÎÎÎ

ÎÎ

ÎÎ

Unit

Vdc

ÎÎ

mAdc

ÎÎ

ÎÎ

mAdc

ÎÎ

mAdc

ÎÎ

−

ÎÎ

ÎÎ

ÎÎ

ÎÎ

Vdc

ÎÎ

Vdc

MHz

ÎÎ

, POWER DISSIPATION (WATTS)

D

P

3.0

2.0

1.0

T

T

C

A

60

40

T

C

20

0

0

0

40 60 100 120 160

20

T

A

80 140

T, TEMPERATURE (°C)

Figure 1. Power Derating

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2

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)

1.0

0.7
D = 0.5

0.5

0.3

0.2

0.1

0.07

0.05

r(t), TRANSIENT THERMAL

0.03

RESISTANCE (NORMALIZED)

0.02

0.01

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k0.1 0.50.2

0.02

Z

= r(t) R

q

JC(t)

R

q

JC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

J(pk)

t, TIME (ms)

q

− TC = P

JC

1

(pk)

= 1.56°C/W MAX

Figure 2. Thermal Response

P

(pk)

t

1

t

Z

q

JC(t)

2

DUTY CYCLE, D = t1/t

100 200

2

20
16

10

1.0

0.1

, COLLECTOR CURRENT (AMP)

C

I

0.02

2.0

BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN
LIMITED @ TC = 25°C

5.0 10 150

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

20 120

dc

100 ms

5ms

MJE15028
MJE15029

MJE15030
MJE15031

Figure 3. Forward Bias Safe Operating Area

8.0

5.0

IC/IB = 10
TC = 25°C

3.0

2.0

, COLLECTOR CURRENT (AMP)

C

I

1.0

0

0

100 110 150

120 140

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

130

V

BE(off)

5 V

3 V

1.5 V
0 V

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − V

CE

limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.

The data of Figures 3 and 4 is based on T

J(pk)

= 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
< 150_C. T

may be calculated from the data in Figure 2.

J(pk)

J(pk)

At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the

50

= 9 V

limitations imposed by second breakdown.

1000

Cib (NPN)
Cib (PNP)

C, CAPACITANCE (pF)

500

200

100

50

30

20

10

3.0
VR, REVERSE VOLTAGE (VOLTS)

50

Cob (PNP)

Cob (NPN)

10030107.05.01.5

150

Figure 4. Reverse−Bias Switching

Safe Operating Area

Figure 5. Capacitances

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3

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)

)

NPN — MJE15028 MJE15030 PNP — MJE15029 MJE15031

100

50

30

20

10

, SMALL SIGNAL CURRENT GAIN

fe

h

5.0

0.5

0.7

VCE = 10 V
IC = 0.5 A
TC = 25°C

1.0 3.0 10

2.0 7.0

f, FREQUENCY (MHz)

PNP

NPN

5.0

Figure 6. Small−Signal Current Gain

1K

500

200
150

100

70
50

, DC CURRENT GAIN

FE

h

30

20

TJ = 150°C

TJ = 25°C

TJ = −55°C

VCE = 2.0 V

100

90

60

50

20

10

0

, CURRENT GAIN−BANDWIDTH PRODUCT (MHz

T

0.1 5.0

f

0.2

(PNP)

(NPN)

0.5 2.0

IC, COLLECTOR CURRENT (AMP)

Figure 7. Current Gain−Bandwidth Product

1K

500

TJ = 150°C

200

100

, DC CURRENT GAIN

FE

h

50

20

TJ = 25°C

TJ = −55°C

1.0 10

VCE = 2 V

V, VOLTAGE (VOLTS)

1.6

1.2

1.0

0.6

0.2

10

0.1

0.2

TJ = 25°C

1.0 5.02.00.5

NPN PNP

V

@ IC/IB = 10

BE(sat)

V

@ VCE = 2.0 V

BE(on)

V

= IC/IB = 20

CE(sat)

IC/IB = 10

IC, COLLECTOR CURRENT (AMP)

100.1

10

Figure 8. DC Current Gain

1.8

TJ = 25°C

1.4

100.2 1.0 5.02.00.5 100.1 0.2 1.0 5.02.00.5

1.0

0.8

V, VOLTAGE (VOLTS)

0.4

0

Figure 9. “On” Voltage

IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)

V

@ IC/IB = 10

BE(sat)

V

@ VCE = 2.0 V

BE(on)

V

= IC/IB = 20

CE(sat)

IC, COLLECTOR CURRENT (AMP)

100.1 0.2 1.0 5.02.00.5

IC/IB = 10

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4

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)

10

5.0

3.0

2.0

1.0

t, TIME (s)μ

0.5

0.2

0.1

tf (PNP)

tf (NPN)

IC, COLLECTOR CURRENT (AMP)

VCC = 80 V
IC/IB = 10, IB1 = I
ts (NPN) TJ = 25°C

ts (PNP)

Figure 11. Turn−Off Times

t, TIME (s)μ

0.05

0.03

0.02

0.01

1.0

0.5

0.2

0.1

0.1

VCC = 80 V
IC/IB = 10
TJ = 25°C

tr (PNP)

tr (NPN)

IC, COLLECTOR CURRENT (AMP)

Figure 10. Turn−On Times

t

(NPN, PNP)

d

100.2 1.0 5.02.00.5 100.1 0.2 0.3 5.02.00.5

ORDERING INFORMATION

Device Package Shipping

MJE15028 TO−220 50 Units / Rail
MJE15028G TO−220

(Pb−Free)
MJE15029 TO−220 50 Units / Rail
MJE15029G TO−220

(Pb−Free)
MJE15030 TO−220 50 Units / Rail
MJE15030G TO−220

(Pb−Free)
MJE15031 TO−220 50 Units / Rail
MJE15031G TO−220

(Pb−Free)

50 Units / Rail

50 Units / Rail

50 Units / Rail

50 Units / Rail

B2

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MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)

PACKAGE DIMENSIONS

TO−220AB

CASE 221A−09

ISSUE AA

SEATING

−T−

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R
J

G

D

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 −−− 1.15 −−−
Z −−− 0.080 −−− 2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

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MJE15028/D

6