Datasheet MJE15028G, MJE15029G Specification

MJE15028, MJE15030 (NPN)
MJE15029, MJE15031 (PNP)

Complementary Silicon
Plastic Power Transistors

These devices are designed for use as high−frequency drivers in

audio amplifiers.

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Features

• DC Current Gain Specified to 4.0 A

= 40 (Min) @ IC = 3.0 Adc

h

FE

= 20 (Min) @ I

= 4.0 Adc

C

• Collector−Emitter Sustaining Voltage −

V

CEO(sus)

= 120 Vdc (Min); MJE15028, MJE15029
= 150 Vdc (Min); MJE15030, MJE15031

• High Current Gain − Bandwidth Product

= 30 MHz (Min) @ IC = 500 mAdc

f

T

• TO−220AB Compact Package

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

MJE15028, MJE15029
MJE15030, MJE15031

Collector−Base Voltage

MJE15028, MJE15029
MJE15030, MJE15031

Emitter−Base Voltage V

Collector Current − Continuous

− Peak

Base Current I

Total Device Dissipation @ TC = 25_C
Derate above 25°C

Total Device Dissipation @ TC = 25_C
Derate above 25°C

Operating and Storage Junction
Temperature Range

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

V

CEO

V

I

I

CM

P

P

TJ, T

R

q

R

q

CB

EB

C

B

D

D

JC

JA

stg

120
150

120
150

5.0 Vdc

8.0
16

2.0 Adc

50

0.40

2.0

0.016

−65 to
+150

2.5

62.5

Vdc

Vdc

Adc

W

W/_C

W

W/_C

_C

_C/W

_C/W

8 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

120−150 VOLTS, 50 WATTS

TO−220AB

CASE 221A−09

2

3

MARKING DIAGRAM

MJE150xx = Device Code

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

STYLE 11

MJE150xxG

AY WW

x = 28, 29, 30, or 31

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2011

October, 2011 − Rev. 5

1 Publication Order Number:

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

MJE15028/D

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(I

= 10 mAdc, IB = 0) MJE15028, MJE15029

C

MJE15030, MJE15031

Collector Cutoff Current

(VCE = 120 Vdc, IB = 0) MJE15028, MJE15029
(VCE = 150 Vdc, IB = 0) MJE15030, MJE15031

Collector Cutoff Current

(V

= 120 Vdc, IE = 0) MJE15028, MJE15029

CB

(VCB = 150 Vdc, IE = 0) MJE15030, MJE15031

Emitter Cutoff Current

(V

= 5.0 Vdc, IC = 0)

BE

ON CHARACTERISTICS (Note 1)

DC Current Gain

(I

= 0.1 Adc, VCE = 2.0 Vdc)

C

= 2.0 Adc, VCE = 2.0 Vdc)

(I

C

(IC = 3.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 2.0 Vdc)

DC Current Gain Linearity

(V

From 2.0 V to 20 V, IC From 0.1 A to 3 A)

CE

(NPN to PNP)

Collector−Emitter Saturation Voltage

(I

= 1.0 Adc, IB = 0.1 Adc)

C

Base−Emitter On Voltage

(I

= 1.0 Adc, VCE = 2.0 Vdc)

C

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2)

(I

= 500 mAdc, VCE = 10 Vdc, f

C

= 10 MHz)

test

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2. f

= ⎪hfe⎪• f

T

test

.

Symbol

V

CEO(sus)

I

CEO

I

CBO

I

EBO

h

FE

h

FE

V

CE(sat)

V

BE(on)

f

T

Min

120
150

−

−

−

−

−

40
40
40
20

−

−

30

Typ

2
3

Max

−

−

0.1

0.1

10
10

10

−

−

−

−

0.5

1.0

−

Unit

Vdc

mAdc

mAdc

mAdc

−

Vdc

Vdc

MHz

, POWER DISSIPATION (WATTS)

D

P

3.0

2.0

1.0

T

T

C

A

60

40

T

C

20

0

0

0

20

40 60 100 120 160

T

A

80 140

T, TEMPERATURE (°C)

Figure 1. Power Derating

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2

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)

1.0

0.7
D = 0.5

0.5

0.3

0.2

0.1

0.07

0.05

r(t), TRANSIENT THERMAL

0.03

RESISTANCE (NORMALIZED)

0.02

0.01

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k0.1 0.50.2

0.02

Z

= r(t) R

q

JC(t)

R

q

JC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

J(pk)

t, TIME (ms)

q

- TC = P

JC

1

(pk)

= 1.56°C/W MAX

Figure 2. Thermal Response

P

(pk)

t

1

t

Z

q

JC(t)

2

DUTY CYCLE, D = t1/t

100 200

2

20
16

10

1.0

0.1

, COLLECTOR CURRENT (AMP)

C

I

0.02

2.0

BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN
LIMITED @ T

5.0 10 150

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

= 25°C

C

20 120

dc

100 ms

5ms

MJE15028
MJE15029

MJE15030
MJE15031

Figure 3. Forward Bias Safe Operating Area

8.0

5.0

IC/IB = 10
T

= 25°C

C

3.0

2.0

, COLLECTOR CURRENT (AMP)

C

I

1.0

0

100 110 150

0

120 140

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

130

V

BE(off)

5 V

3 V

1.5 V
0 V

Figure 4. Reverse−Bias Switching

Safe Operating Area

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I

− V

C

CE

limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.

The data of Figures 3 and 4 is based on T
T

is variable depending on conditions. Second breakdown

C

pulse limits are valid for duty cycles to 10% provided T
< 150_C. T

may be calculated from the data in Figure 2.

J(pk)

J(pk)

= 150_C;

J(pk)

At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the

50

= 9 V

limitations imposed by second breakdown.

1000

500

200

100

50

C, CAPACITANCE (pF)

30

20

10

3.0
V

R

Figure 5. Capacitances

Cib (NPN)
Cib (PNP)

, REVERSE VOLTAGE (VOLTS)

50

Cob (PNP)

Cob (NPN)

10030107.05.01.5

150

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3

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)

100

50

30

20

10

, SMALL SIGNAL CURRENT GAIN

fe

h

5.0

1K

500

200
150

100

70
50

, DC CURRENT GAIN

FE

h

30

20

VCE = 10 V
I

= 0.5 A

C

= 25°C

T

C

0.5

1.0 3.0 10

0.7

2.0 7.0

f, FREQUENCY (MHz)

Figure 6. Small−Signal Current Gain

NPN — MJE15028 MJE15030 PNP — MJE15029 MJE15031

TJ = 150°C

TJ = 25°C

TJ = -55°C

NPN

PNP

5.0

VCE = 2.0 V

100

90

(PNP)

(NPN)

60

50

20

10

0

, CURRENT GAIN-BANDWIDTH PRODUCT (MHz)

T

0.1 5.0

f

0.2

0.5 2.0

1.0 10

IC, COLLECTOR CURRENT (AMP)

Figure 7. Current Gain−Bandwidth Product

1K

500

TJ = 150°C

200

100

50

, DC CURRENT GAIN

FE

h

20

TJ = 25°C

TJ = -55°C

VCE = 2 V

V, VOLTAGE (VOLTS)

1.6

1.2

1.0

0.6

0.2

10

0.2

1.0 5.02.00.5

100.1

10

100.1 0.2 1.0 5.02.00.5

IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)

Figure 8. DC Current Gain

NPN PNP

0.1

TJ = 25°C

V

@ IC/IB = 10

BE(sat)

V

@ VCE = 2.0 V

BE(on)

V

= IC/IB = 20

CE(sat)

, COLLECTOR CURRENT (AMP)

I

C

IC/IB = 10

100.2 1.0 5.02.00.5 100.1 0.2 1.0 5.02.00.5

V, VOLTAGE (VOLTS)

1.8

1.4

1.0

0.8

0.4

TJ = 25°C

V

@ IC/IB = 10

BE(sat)

V

@ VCE = 2.0 V

BE(on)

V

= IC/IB = 20

CE(sat)

0

IC/IB = 10

IC, COLLECTOR CURRENT (AMP)

Figure 9. “On” Voltage

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4

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)

5.0

3.0

2.0

10

VCC = 80 V
I

= 10, IB1 = I

C/IB

ts (NPN) TJ = 25°C

1.0

0.5

0.2

tr (PNP)

VCC = 80 V
I

= 10

C/IB

= 25°C

T

J

t

(NPN, PNP)

d

ts (PNP)

t, TIME (s)μ

0.05

0.03

0.02

0.01

0.1

0.1

tr (NPN)

100.2 1.0 5.02.00.5 100.1 0.2 0.3 5.02.00.5

IC, COLLECTOR CURRENT (AMP)

Figure 10. Turn−On Times

1.0

t, TIME (s)μ

0.5

0.2

tf (PNP)

tf (NPN)

0.1

I

, COLLECTOR CURRENT (AMP)

C

Figure 11. Turn−Off Times

ORDERING INFORMATION

Device Package Shipping

MJE15028 TO−220 50 Units / Rail

MJE15028G TO−220

(Pb−Free)

MJE15029 TO−220 50 Units / Rail

MJE15029G TO−220

(Pb−Free)

MJE15030 TO−220 50 Units / Rail

MJE15030G TO−220

(Pb−Free)

MJE15031 TO−220 50 Units / Rail

MJE15031G TO−220

(Pb−Free)

50 Units / Rail

50 Units / Rail

50 Units / Rail

50 Units / Rail

B2

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5

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AG

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

SEATING

−T−

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R

J

G

D

N

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.036 0.64 0.91

F 0.142 0.161 3.61 4.09
G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10

J 0.014 0.025 0.36 0.64
K 0.500 0.562 12.70 14.27

L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39

T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---

Z --- 0.080 --- 2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

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MJE15028/D

6