Datasheet MJE1320 Datasheet (Motorola)

1

Motorola Bipolar Power Transistor Device Data

  

   

Switchmode Series

This transistor is designed for high–voltage, power switching in inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for line–operated switchmode applications.

Typical Applications:

• Fluorescent Lamp Ballasts

• Inverters

• Solenoid and Relay Drivers

• Motor Controls

• Deflection Circuits

Features:

• High V

CEV

Capability (1800 Volts)

• Low Saturation Voltage

• 100_C Performance Specified for:

Reverse–Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents

MAXIMUM RATINGS

Rating

Symbol

ОООООООО

Value

ÎÎÎÎ

Unit

Collector–Emitter Voltage

V

CEO(sus)

ОООООООО

900

ÎÎÎÎ

Vdc

Collector–Emitter Voltage

V

CEV

ОООООООО

1800

ÎÎÎÎ

Vdc

Emitter Base Voltage

V

EB

ОООООООО

9

ÎÎÎÎ

Vdc

Collector Current — Continuous

Peak(1)

I

C

I

CM

ОООООООО

2 5

ÎÎÎÎ

Adc

Base Current — Continuous

Peak(1)

I

B

I

BM

ОООООООО

1.5

2.5

ÎÎÎÎ

Adc

Total Power Dissipation @ TC = 25_C

@ TC = 100_C

Derate above 25_C

P

D

ОООООООО

80 32

0.64

ÎÎÎÎ

Watts

W/_C

Operating and Storage Junction Temperature Range

TJ, T

stg

ОООООООО

–65 to +150

ÎÎÎÎ

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

ОООООООО

Max

ÎÎÎÎ

Unit

Thermal Resistance, Junction to Case

R

θJC

ОООООООО

1.56

ÎÎÎÎ

_

C/W

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

T

L

ОООООООО

275

ÎÎÎÎ

_

C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

SWITCHMODE is a trademark of Motorola, Inc.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE1320/D

 Motorola, Inc. 1995



POWER TRANSISTOR

2 AMPERES

900 VOLTS

80 WATTS

CASE 221A–06

TO–220AB

MJE1320

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

ÎÎÎ

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 50 mA, IB = 0)

V

CEO(sus)

900

—

ÎÎÎ

Vdc

Collector Cutoff Current

(V

CEV

= Rated Value, V

BE(off)

= 1.5 Vdc)

(V

CEV

= Rated Value, V

BE(off)

= 1.5 Vdc, TC = 100_C)

I

CEV

— —

0.25

2.5

ÎÎÎ

mAdc

Emitter Cutoff Current

(VEB = 9 Vdc, IC = 0)

I

EBO

—

0.25

ÎÎÎ

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

I

S/b

See Figure 13

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 14

ON CHARACTERISTICS

(1)

DC Current Gain (VCE = 5 Vdc) IC = 2 Adc

IC = 1 Adc

h

FE

2.5 3

4.5 7

— —

ÎÎÎ

— —

Collector–Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.5 Adc) (IC = 2 Adc, IB = 1 Adc) (IC = 1 Adc, IB = 0.5 Adc, TC = 100_C)

V

CE(sat)

— — —

0.18

0.3

1

2.5

1.5

ÎÎÎ

Vdc

Base–Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.5 Adc) (IC = 2 Adc, IB = 1 Adc) (IC = 1 Adc, IB = 0.5 Adc, TC = 100_C)

V

BE(sat)

— — —

0.2

0.9

0.15

1.5

2.8

1.5

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IE = 0, f

test

= 1 MHz)

C

ob

—

80

—

ÎÎÎ

pF

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

t

d

—

0.1

—

ÎÎÎ

µs

Rise Time

t

r

—

0.8

—

ÎÎÎ

µs

Storage Time

IB1 = IB2 = 0.5 Adc tp = 25 µs, Duty Cycle v 2%

t

s

—

4

—

ÎÎÎ

µs

Fall Time

p

= 25 µs, Duty Cycle v 2%

t

f

—

0.8

—

ÎÎÎ

µs

Inductive Load, Clamped (Table 2)

Storage Time

t

sv

—

2.8

—

ÎÎÎ

µs

Crossover Time

TC = 25_C

t

c

—

2.2

—

ÎÎÎ

µs

Storage Time

IC = 1 A, V

clamp

= 400 Vdc,

V

= 2 Vdc, I

= 0.5 Adc

t

sv

—

3.7

10.5

ÎÎÎ

µs

Crossover Time

V

BE(off)

= 2 Vdc, IB1 = 0.5 Adc

_

C

t

c

—

3.5

10

ÎÎÎ

µs

Fall Time

_

C

ÎÎÎ

(1) Pulse Test: Pulse Width = 300 µs. Duty Cycle v 2%.

VCC = 250 Vdc, IC = 1 A

TC = 100

MJE1320

3

Motorola Bipolar Power Transistor Device Data

C, CAPACITANCE (pF)

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)V

BE

, BASE–EMITTER VOLTAGE (VOLTS)

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.05 IC, COLLECTOR CURRENT (AMPS)

0.2 0.5 3

5

2

100

h

FE

, DC CURRENT GAIN

VCE = 5 V

TC = 100°C

20

0.3 1

25°C

3

0.1

0.7 2 5

Figure 1. DC Current Gain

70 50

30

10

7

1

2.5 A

Figure 2. Collector Saturation Region

IB, BASE CURRENT (AMP)

1.2

0.4 0

0.1

2

0.8

TJ = 25°C

1.6

IC = 1 A

2 A

105210.70.50.30.2

IC, COLLECTOR CURRENT (AMPS)

1.3

0.9

2

IC, COLLECTOR CURRENT (AMPS)

1.6

1.2

0.4

0

0.3

Figure 3. Collector–Emitter Saturation Voltage

0.25 0.3 0.4 2.51 1.50.5

Figure 4. Base–Emitter Saturation Voltage

IC/IB = 2

1.1

0.7

0.5

TJ = 100°C

0.8

2

Figure 5. Collector Cutoff Region

10K

VBE, BASE–EMITTER VOLTAGE (VOLTS)

0.1 0–0.4

Figure 6. Capacitance Variation

10K

VR, REVERSE VOLTAGE (VOLTS)

C

ib

0.2

, COLLECTOR CURRENT ( A)

µ

I

C

1K

100

10

1

–0.2 +0.2 +0.4 +0.6

75°C

REVERSE FORWARD

25°C

VCE = 250 V

5K

2K 1K

500

200 100

50

20 10

0.3 0.5 1 2 5 10 20 50 100 500 2K

300

3K

30

200

0.07

2.4

2.8

7

100°C

0.25 0.3 0.4 2.51 1.50.5 0.7 2

30

3

1K

f = 1 MHz TJ = 25

°

C

25°C

TJ = 25°C

IC/IB = 2

TJ = 150°C

125°C 100°C

C

ob

TYPICAL STATIC CHARACTERISTICS

MJE1320

4

Motorola Bipolar Power Transistor Device Data

Figure 7. Inductive Switching Measurements

TIME

V

CE

90% I

B1

t

sv

IC pk

V

CE(pk)

90% V

CE(pk)

10% V

CE(pk)

10%

IC pk

2% I

C

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Inductive Storage Time

10

7 5

2

0.5

0.7

V

BE(off)

= 1 V

TJ = 100°C IC/IB1 = 2

1

3

IC, COLLECTOR CURRENT (AMPS)

0.5 0.7 1 2 6

5

3

2

1

0.7

0.3

Figure 9. Inductive Crossover Time

5

0.5

6

Figure 10. Inductive Fall Time

6

IC, COLLECTOR CURRENT (AMPS)

5

3

2

1

0.7

0.3

0.5

3 0.5 0.7 1 2 60.3 53

0.5 0.7 1 2 60.3 53

2 V

, STORAGE TIME (t

SV

µ

s)

T

µ

C

, CROSSOVER TIME ( s)

90% I

C(pk)

I

C

I

B

t

fi

t

ti

t

c

3 V

V

BE(off)

= 3 V

2 V 1 V

V

BE(off)

= 3 V

2 V 1 V

TYPICAL DYNAMIC CHARACTERISTICS

Table 1. Resistive Load Switching

td and t

r

ts and t

f

Note: Adjust – V to obtain desired V

BE(off)

at Point A.

VCC = 250 Vdc RL = 250 Ω IC = 1 Adc IB = 0.5 Adc

*Tektronix AM503

*P6302 or Equivalent

VCC = 250 Vdc IB1 = 0.5 Adc RB1 = 22 Ω RL = 250 Ω IB2 = 0.5 Adc RB2 = 10 Ω IC = 1 Adc For V

BE(off)

= 5 V RB2 = 0 Ω

H.P. 214

OR EQUIV.

P.G.

50

RB = 22

Ω

*I

B

*I

C

T.U.T.

R

L

V

CC

V

in

0 V

≈

11 V

tr

≤

15 ns

0 V

≈

–35 V

H.P. 214

OR EQUIV.

P.G.

20

0.02

µ

F

100

10

µ

F

+

0.02

µ

F

50

500

1

µ

F

100

R

B1

R

B2

A

+Vdc

≈

11 Vdc

2N6191

2N5337

–V

+V

0 V

–5 V

A

50

*I

B

*I

C

R

L

V

CC

T.U.T.

t

rv

µ

, FALL TIME ( s)

fi

t

MJE1320

5

Motorola Bipolar Power Transistor Device Data

Table 2. Inductive Load Switching

V

(BR)CEO

Inductive Switching RBSOA

L = 10 mH L = 1.1 mH L = 1.1 mH RB2 =

R

RB2 = 0 RB2 = 0

VCC = 20 Volts VCC = 20 Volts VCC = 20 Volts

RB1 selected for desired I

B1

RB1 selected for desired I

B1

*Tektronix Scope — Tektronix

*P–6042 or 7403 or *Equivalent Equivalent Note: Adjust –V to obtain desired V

BE(off)

at Point A.

T1

[

L

coil

(I

Cpk

)

T1 adjusted to obtain I

C(pk)

V

CC

H.P. 214

OR EQUIV.

P.G.

0

≈

–35 V

50

0.02

µ

F

+ –

20

0.02

µ

F

100

1

µ

F

500

+ –

100

+V

≈

11 V

–V

A

2N5337

2N6191

R

B1

R

B2

10

µ

F

T

1

+V

0 V

–V

A

50

*I

B

*I

C

T.U.T.

L

MR856

V

clamp

V

CC

I

C

V

CE

I

B

I

B1

I

B2

I

C(pk)

V

CE(pk)

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 12 is based on TC = 25_C; T

J(pk)

is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 12 may be found at any case temperature by using the appropriate curve on Figure 11.

T

J(pk)

may be calculated from the data in Figure 14. At

high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base–to–emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage–current condition allowable during r everse biased turnoff. This rating is verified u nder clamped conditions so that the device is never subjected to an avalanche mode. Figure 13 gives the RBSOA characteristics.

MJE1320

6

Motorola Bipolar Power Transistor Device Data

I

C

, COLLECTOR CURRENT (AMPS)

20

TC, CASE TEMPERATURE (

°

C)

0

40 120 160

0.6

POWER DERATING FACTOR

SECOND BREAKDOWN

DERATING

1

0.8

0.4

0.2

Figure 11. Power Derating

60 100

10

1

Figure 12. Maximum Rated Forward Bias Safe

Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5 2

0.5

0.01 100

WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT

I

C

, COLLECTOR CURRENT (AMPS)

dc

0.05

10

5 ms

900

1

0.2

0.1

0.02

TC = 25°C

10 µs

5

0

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0

600 1800

3

2

1

900 1200 1500

Figure 13. Maximum Rated Reverse Bias Safe

Operating Area

4

Figure 14. Thermal Response

t, TIME (ms)

1

0.01

0.1

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1 10 1000.1 1K

Z

θ

JC(t)

= r(t) R

θ

JC

R

θ

JC

= 1.56

°

C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t

1

T

J(pk)

– TC = P

(pk)

Z

θ

JC

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

D = 0.5

0.2

0.05

0.01

SINGLE PULSE

0.1

0.02

14080

THERMAL

DERATING

TJ ≤ 100°C V

BE(off)

= 2 V

IC/IB = 1

IC/IB = 2

GUARANTEED SAFE OPERATING AREA

MJE1320

7

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73

G 0.095 0.105 2.42 2.66

H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33

Q 0.100 0.120 2.54 3.04

R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 ––– 1.15 ––– Z ––– 0.080 ––– 2.04

B

Q

H

Z

L

V

G

N

A

K

F

1 2 3

4

D

SEATING PLANE

–T–

C

S

T

U

R J

MJE1320

8

Motorola Bipolar Power Transistor Device Data

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Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

MJE1320/D

*MJE1320/D*

◊

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