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SILICON NPN SWITCHINGTRANSISTOR
■ SGS-THOMSONPREFERRED SALESTYPE
■ NPNTRANSISTOR
■ HIGH CURRENTCAPABILITY
APPLICATIONS
■ SWITCHINGREGULATORS
■ MOTORCONTROL
MJE13007
DESCRIPTION
The MJE13007 is a silicon multiepitaxial mesa
NPN power transistor mounted in Jedec TO-220
3
2
1
plasticpackage.
It is are inteded foruse in motor control,switching
TO-220
regulators etc.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
I
I
I
P
T
Collector-Emitter Voltage ( VBE= -1.5V) 700 V
CEV
Collector-Emitter Voltage ( IB= 0) 400 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 8 A
I
C
Collect or Peak Current 16 A
CM
Base Current 4 A
I
B
Base Peak Current 8 A
BM
Emitter Current 12 A
I
E
Emitter Peak Current 24 A
EM
Tot al Dissipa t ion at Tc≤ 25oC80W
tot
Storage Temperature -65 to 1 50
stg
Max. O per ating Junction Tem per at u re 150
T
j
o
C
o
C
June 1998
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MJE13007
THERMAL DATA
R
thj-case
Ther mal Resistance Junct ion-cas e Max 1.56
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CEV
I
EBO
V
CEO(sus)
Collector C ut-off
Current (V
= -1.5V)
BE
Emit ter Cut-of f C urr ent
=0)
(I
C
∗ Collect or- Emitter
V
=ratedV
CE
VCE=ratedV
V
=9V 1 mA
EB
CEV
CEVTc
=100oC
1
5
IC= 10 m A 400 V
Sust aining Volt ag e
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC=2A VCE=5V
FE
C
f
CBO
Tr ansition Fr eque ncy IC=0.5A VCE=10V f=1MHz 4 MHz
T
Out put Ca pac itance IE=0 VCB= 10 V f = 0. 1 MH z 110 pF
IC=2A IB=0.4A
=5A IB=1A
I
C
=8A IB=2A
I
C
=5A IB=1A Tc=100oC
I
C
IC=2A IB=0.4A
=5A IB=1A
I
C
=5A IB=1A Tc=100oC
I
C
=5A VCE=5V
I
C
8
6
1
1.5
3
2
1.2
1.6
1.5
40
30
RESISTIVELOAD
Symb o l Parameter Test Co n d itions M i n. Ty p . Max. Un i t
t
on
t
s
t
f
Turn-on Time VCC= 125 V IC=5A
=-IB2=1A
I
Storage Time 3ms
Fall Time 0.7 ms
B1
t
=25µs Duty Cy cle < 1%
p
0.7 µs
mA
mA
V
V
V
V
V
V
V
INDUCTIVELOAD
Symb o l Parameter Test Co n d itions M i n. Ty p . Max. Un i t
t
Fall Time VCC= 125 V IC=5A IB1=1A
f
Fall Time VCC= 125 V IC=5A IB1=1A
t
f
* Pulsed: Pulse duration = 300µs, dutycycle 2 %
2/4
=25µs Duty Cy cle < 1%
t
p
=25µs Duty Cy cle < 1%
t
p
T
=100oC
c
0.3 µs
0.6 µs
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TO-220 MECHANICAL DATA
MJE13007
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
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MJE13007
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of use of such information nor for any infringement of patents or other rights of third parties which may resultfrom its use. No license is
granted by implication orotherwiseunder any patentor patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. This publicationsupersedes andreplaces allinformation previously supplied.STMicroelectronics products
are not authorized for use as critical componentsin life support devicesor systems withoutexpresswritten approval of STMicroelectronics.
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