Page 1
2010. 10. 11 1/3
SEMICONDUCTOR
TECHNICAL DATA
MJE13005DF
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 2
HIGH VOLTAGE HIGH SPEED POWER SWITCH
APPLICATION.
·Built-in Free wheeling Diode makes efficient anti saturation operation.
·
Suitable for half bridge light ballast Applications.
·
Low base drive requirement.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
t
*Pulse Test : Pulse Width = 5mS, Duty cycles≤10%
Note : h
FE
Classification R : 18~27, O : 23~35
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
800 V
Collector-Emitter Voltage
V
CEO
400 V
Emitter-Base Voltage
V
EBO
10 V
Collector Current
DC
I
C
5
A
Pulse
I
CP
10
Base Current
I
B
2 A
Collector Power Dissipation (Tc=25℃)
P
C
30 W
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Emitter Cut-off Current
I
EBO
VEB=9V, IC=0
- - 10
μA
DC Current Gain
hFE(1) VCE=5V, IC=1A
18 - 35
hFE(2) VCE=5V, IC=2A
8 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=1A, IB=0.2A
- - 0.5
V
IC=2A, IB=0.5A
- - 0.6
IC=4A, IB=1A
- - 1
Base-Emitter Saturation Voltage
V
BE(sat)
IC=1A, IB=0.2A
- - 1.2
V
IC=2A, IB=0.5A
- - 1.6
Collector Output Capacitance
C
ob
VCB=10V, f=1MHz
- 65 - pF
Transition Frequency
f
T
VCE=10V, IC=0.5A
4 - - MHz
Turn-On Time
t
on
- - 0.15
μS
Storage Time
t
stg
- - 5
μS
Fall Time
t
f
- - 0.8
μS
Diode Forward Voltage
V
F
IF=2A
- - 1.6 V
*Reverse recovery tims (di/dt=10A/μS)
t
rr
IF=0.4A
- 800 - nS
IF=1A
- 1.4 -
μS
IF=2A
- 1.9 -
μS
Equivalent Circui
C
A
S
E
L
K
D
N
2
1
F
B
G
L
M
J
D
N
Q
3
C
P
R
H
1. BASE
2. COLLECTOR
3. EMITTER
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
MILLIMETERS
10.0 0.3
15.0 0.3
2.70 0.3
0.76+0.09/-0.05
Φ3.2 0.2
3.0 0.3
12.0 0.3
0.5+0.1/-0.05
13.6 0.5
3.7 0.2
1.2+0.25/-0.1
1.5+0.25/-0.1
2.54 0.1
6.8 0.1
4.5 0.2
2.6 0.2
0.5 Typ
TO-220IS
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
B
300µS
I
B1
I
I
=0.4A, IB2=-1A
B1
DUTY CYCLE
<
=
E
INPUT
B2
2%
OUTPUT
I
B1
I
B2
150Ω
V =300V
CC
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2010. 10. 11 2/3
MJE13005DF
Revision No : 2
k
100
FE
10
Ta=125 C
-20 C
DC CURRENT GAIN h
1
0.01
0.1 1
COLLECTOR CURRENT I
100
FE
10
Ta=125 C
25 C
-20 C
DC CURRENT GAIN h
1
0.01
0.1 1
hFE - I
25 C
hFE - I
V
C
VCE=1V
10
BE(sat),VCE(sat)
- I
C
IC/IB=4
(V)
CE(sat)
1
,V
BE(sat)
0.1
VOLTAGE V
0.01
0.01
COLLECTOR-EMITTER SATURATION
C
10
(A)
C
VCE=5V
10
1k
500
300
100
50
(pF)
30
ob
C
10
5
3
13110 30 100 300 1
COLLECTOR OUTPUT CAPACITANCE
VBE(sat)
VCE(sat)
0.1 1
COLLECTOR CURRENT IC (A)
Cob - V
CB
COMMON
EMITTER
f=1MHz
Ta=25 C
10
COLLECTOR CURRENT IC (A)
IC - V
CE
5
(A)
C
4
3
2
1
COLLECTOR CURRENT I
0
0123456789
IB=500mA
COLLECTOR EMITTER VOLTAGE VCE (V)
IB=400mA
IB=300mA
IB=200mA
IB=100mA
IB=50mA
IB=0V
COLLECTOR-BASE VOLTAGE V
SWITCHING CHARACTERISTIC
10
1
0.1
SWITCHING TIME (µS)
10
0.01
VCC=300V
I
C
0.1
=5IB1,=-2.5I
B2
1
t
stg
t
f
CB
(V)
10
COLLECTOR CURRENT IC (A)
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2010. 10. 11 3/3
MJE13005DF
Revision No : 2
trr - I
F
1.6
(µS)
rr
1.4
1.2
1.0
0.8
REVERSE RECOVERY TIME t
1.0
1.5 2.0
FORWARD CURRENT I
P
- Ta
C
(W)
C
50
45
40
35
30
25
20
15
10
5
0
0
25 50 75 100 125 150 175 200
COLLECTOR POWER DISSIPATION P
AMBIENT TEMPERATURE Ta ( C)
Tc=Ta INFINITE HEAT SINK
F
(A)
VF - I
F
(V)
10
F
1
0.1
FORWARD DIODE VOLTAGE V
0.01 0.1 1
FORWARD DIODE CURRENT IF (A)
REVERSE BIASED SAFE
OPERATING AREA
10
(A)
C
8
6
4
2
COLLECTOR CURRENT I
0
0 100 200 300 400 600 800700500 900
COLLECTOR-EMITTER CLAMP VOLTAGE VCE (V)
IB=2A
V
(off)=-5V
BE
L=100 H
10
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