Page 1
2009. 2. 26 1/4
SEMICONDUCTOR
TECHNICAL DATA
MJE13005D
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 4
HIGH VOLTAGE HIGH SPEED POWER SWITCH
APPLICATION.
Built-in Free wheeling Diode makes efficient anti saturation operation.
Suitable for half bridge light ballast Applications.
Low base drive requirement.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
t
*Pulse Test : Pulse Width = 5mS, Duty cycles 10%
Note : h
FE
Classification R : 18~27, O : 23~35
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
800 V
Collector-Emitter Voltage
V
CEO
400 V
Emitter-Base Voltage
V
EBO
10 V
Collector Current
DC
I
C
5
A
Pulse
I
CP
10
Base Current
I
B
2 A
Collector Power Dissipation (Tc=25 )
P
C
75 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Emitter Cut-off Current
I
EBO
VEB=9V, IC=0
- - 10
A
DC Current Gain
hFE(1) VCE=5V, IC=1A
18 - 35
hFE(2) VCE=5V, IC=2A
8 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=1A, IB=0.2A
- - 0.5
V
IC=2A, IB=0.5A
- - 0.6
IC=4A, IB=1A
- - 1
Base-Emitter Saturation Voltage
V
BE(sat)
IC=1A, IB=0.2A
- - 1.2
V
IC=2A, IB=0.5A
- - 1.6
Collector Output Capacitance
C
ob
VCB=10V, f=1MHz
- 65 - pF
Transition Frequency
f
T
VCE=10V, IC=0.5A
4 - - MHz
Turn-On Time
t
on
- - 0.15
S
Storage Time
t
stg
2 - 5
S
Fall Time
t
f
- - 0.8
S
Diode Forward Voltage
V
F
IF=2A
- - 1.6 V
*Reverse recovery tims (di/dt=10A/ S)
t
rr
IF=0.4A
- 800 - nS
IF=1A
- 1.4 -
S
IF=2A
- 1.9 -
S
Equivalent Circui
C
E
I
K
D
123
123
A
M
NN
L
1. BASE
2. COLLECTOR
3. EMITTER
O
C
F
G
B
Q
J
P
H
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
_
9.9 0.2
+
15.95 MAX
1.3+0.1/-0.05
_
+
0.8 0.1
3.6 0.2
_
+
2.8 0.1
3.7
0.5+0.1/-0.05
1.5
_
+
13.08 0.3
1.46
_
+
1.4 0.1
_
+
1.27 0.1
_
+
2.54 0.2
_
+
4.5 0.2
_
+
2.4 0.2
_
9.2 0.2
+
TO-220AB
_
+
B
300µS
I
B1
I
I
=0.4A, IB2=-1A
B1
DUTY CYCLE
<
=
E
INPUT
B2
2%
OUTPUT
I
B1
I
B2
150Ω
V =300V
CC
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2009. 2. 26 2/4
MJE13005D
Revision No : 4
k
100
FE
10
Ta=125 C
-20 C
DC CURRENT GAIN h
1
0.01
0.1 1
COLLECTOR CURRENT I
100
FE
10
Ta=125 C
25 C
-20 C
DC CURRENT GAIN h
1
0.01
0.1 1
Fig 1. hFE - I
25 C
Fig 3. hFE - I
C
VCE=1V
10
Fig 2. V
BE(sat),VCE(sat)
- I
C
IC/IB=4
(V)
CE(sat)
1
,V
BE(sat)
0.1
VOLTAGE V
0.01
0.01
COLLECTOR-EMITTER SATURATION
C
10
(A)
C
VCE=5V
10
1k
500
300
100
50
(pF)
30
ob
C
10
5
3
13110 30 100 300 1
COLLECTOR OUTPUT CAPACITANCE
VBE(sat)
VCE(sat)
0.1 1
COLLECTOR CURRENT IC (A)
Fig 4. Cob - V
CB
COMMON
EMITTER
f=1MHz
Ta=25 C
10
COLLECTOR CURRENT IC (A)
Fig 5. IC - V
5
(A)
C
4
3
2
1
COLLECTOR CURRENT I
0
0123456789
CE
IB=500mA
COLLECTOR EMITTER VOLTAGE VCE (V)
IB=400mA
IB=300mA
IB=200mA
IB=100mA
IB=50mA
IB=0V
COLLECTOR-BASE VOLTAGE V
Fig 6. SWITCHING CHARACTERISTIC
10
1
0.1
SWITCHING TIME (µS)
10
0.01
VCC=300V
I
C
0.1
=5IB1,=-2.5I
B2
1
t
stg
t
f
CB
(V)
10
COLLECTOR CURRENT IC (A)
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2009. 2. 26 3/4
MJE13005D
Revision No : 4
Fig 7. trr - I
1.6
(µS)
rr
1.4
1.2
1.0
0.8
REVERSE RECOVERY TIME t
1.0
FORWARD CURRENT I
Fig 9. SAFE OPERATING AREA
100
(A)
C
10
1
0.1
F
1.5 2.0
(A)
F
1µs
10µs
1ms
5ms
DC
Fig 8. VF - I
(V)
10
F
1
0.1
FORWARD DIODE VOLTAGE V
0.01 0.1 1
FORWARD DIODE CURRENT IF (A)
(W)
C
Fig 10. P
100
80
60
40
20
C
Tc=Ta INFINITE HEAT SINK
F
10
- Ta
COLLECTOR CURRENT I
0.01
10 100 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
Fig 11. REVERSE BIASED SAFE
OPERATING AREA
10
9
(pk) (A)
8
C
7
6
5
4
3
2
1
0
COLLECTOR CURRENT I
0 100 200 300 400 600 800700500 900
COLLECTOR-EMITTER CLAMP VOLTAGE VCE (V)
IB1=2A
V
(off)=-6.5V
BE
L=50 H
V
=20V
CC
0
0
25 50 75 100 125 150 175 200
COLLECTOR POWER DISSIPATION P
AMBIENT TEMPERATURE Ta ( C)
Page 4
2009. 2. 26 4/4
MJE13005D
Revision No : 4
REVERSE BIASED SAFE OPERATING AREA TEST CIRCUITS
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter
junction reverse biased.
Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current.
This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse
biased turn-off.
This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
Figure 11 gives the complete RBSOA characteristics.
L
C
(3)
I
B1
T.U.T
I
C
(1)
I
B
V
CE
1) Fast electronic switch
R
BB(2)
V
Clamp
V
CC
2) Non-inductive resistor
3) Fast recovery rectifier
V
BB
-
+
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