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Switchmode Power Transistor
MJE13005
Technical Data
Typical Applications : These devices are designed for high voltage , high speed
power switching inductive circuits where fall time is critical . They are particularly
suited for 115 V and 220 V SWITCHMODE applications such as Switching
Regulator’s , Inverters , Motor Controls , Solenoid / Relay drivers and Deflection
circuits.
Specification Fetaures :
F Switchmode series NPN Silicon Power Transistor
F 4 Amp / 400 V device in TO-220AB package
F 75 Watts device
F VCEO (sus) 400 V
F 700 V Blocking capability
Symbol Parameters / Conditions Ratings
Maximum Ratings :
V
CEO(SUS)
V
CEV
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
Collector- Emitter Voltage 400 Vdc
Collector- Emitter Voltage 700 Vdc
Emitter Base Voltage 9 Vdc
Collector Current – Continuos
Peak : Pulse width = 5 ms , Duty Cycle ⊆ 10 %
Base Current – Continuos
Peak : Pulse width = 5 ms , Duty Cycle ⊆ 10 %
Emitter Current – Continuos
Peak : Pulse width = 5 ms , Duty Cycle ⊆ 10 %
4 Adc
8 Adc
2 Adc
4 Adc
6 Adc
12 Adc
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Thermal Characteristics :
CEV
= Rated Value, V
BE(off)
=
CEV
= Rated Value, V
BE(off)
=
R
thjc
R
thjA
T
L
P
D
P
D
Tj & T
Stg
Thermal resistance junction to case
Thermal resistance junction to ambient 62.5 °C/W
Maximum Lead Temperature for Soldering Purpose : 1/8”
from Case for 5 sec
Total Power Dissipation @ Ta = 25 °C
Derate above 25 °C
Total Power Dissipation @ Tc = 25 °C
Derate above 25 °C
Operating and Storage Junction Temperature Range -65 °C ….+ 150 °C
1.67 °C/W
275 °C
2 Watta
16 mW /°C
75 Watta
600 mW /°C
ELECTRICAL CHARACTERISTICS :
[ Tc = 25 °C unless otherwise noted ]
Characteristic Symbol Min Typ Max Unit
Off Characteristics : [ Pulse Test : Pulse width = 300 µs , Duty Cycle = 2 % ]
Collector – Emitter Sustaining
V
CEO(sus)
400 Vdc
Voltage [ Ic = 10 mA , IB = 0 ]
Collector Cutoff Current
[ V
I
CEV
1
1.5 Vdc ]
[ V
5
1.5 Vdc , Tc = 100 °C ]
Emitter Cutoff Current
[ VEB = 9 Vdc , Ic = 0 ]
I
EBO
1 mAdc
On Characteristics : [ Pulse Test : Pulse width = 300 µs , Duty Cycle = 2 % ]
DC Current Gain
[ Ic = 1 Adc , VCE = 5 Vdc ]
[ Ic = 2 Adc , VCE = 5 Vdc ]
Collector-Emitter Saturation
V
h
FE
CE(sat)
10
8
60
40
Voltage
[ Ic = 1 Adc , IB = 0.2 Adc ]
[ Ic = 2 Adc , IB = 0.5 Adc ]
0.5
0.6
mAdc
Vdc
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[ Ic = 4 Adc , IB = 1.0 Adc ]
B
= 0.5 Adc , Tc =
B
= 0.5 Adc , Tc =
CE
=10 Vdc ,
CB
= 10 Vdc , IE = 0 , f = 0.1
CC
=125 V dc , Ic=2A ,
B1
= 0.4 A , V
BE(off)
= 5 V
[ Ic = 2 Adc , I
100 °C ]
Base-Emitter Saturation Voltage
[ Ic = 1 Adc , IB = 0.2 Adc ]
[ Ic = 2 Adc , IB = 0.5 Adc ]
[ Ic = 2 Adc , I
100 °C ]
Dynamic Characteristics :
V
BE(sat)
1
1
Vdc
1.2
1.6
1.5
Current Gain – Bandwidth Product
f
T
4 MHz
[ Ic = 500 mAdc , V
f=1 MHz ]
Output Capacitance
C
ob
65 pF
[ V
MHz ]
Switching Characteristics :
Resistive Load : Typ Max
Delay Time ; t
Rise Time ; t
Storage Time ; t
Fall Time ; t
d
r
s
f
( V
IB1 = IB2 = 0.4 A , tp=25 µs ,
Duty Cycle ⊆ 1 % )
0.025 µs 0.1 µs
0.3 µs 0.7 µs
1.7 µs 4.0 µs
0.4 µs 0.9 µs
Inductive Load ; Clamped : Typ Max
Voltage Storage Time ; t
Crossover Time ; t
Fall Time ; t
fi
c
sv
( Vclamp =300 V dc , Ic=2A
, I
dc , Tc = 100 °C )
0.9 µs 4.0 µs
0.32 µs 0.9 µs
0.16 µs --
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