Page 1
INCHANGE Semiconductor Product Specification
Silicon NPN Power Transistor MJE13003D
DESCRIPTION
·High Voltage Capability
·High Speed Switching
·Wide Area of Safe Operation
APPLICATIONS
·Fluorescent lamp
·Electronic ballast
·Electronic transformer
·Switch mode power supply
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
T
stg
Collector-Base Voltage 700 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 9 V
Collector Current-Continuous 2 A
Collector Power Dissipation
C
j
=25℃
@T
C
Junction Temperature 150 ℃
Storage Temperature -65~150 ℃
40 W
Page 2
INCHANGE Semiconductor Product Specification
Silicon NPN Power Transistor MJE13003D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
V
CE
V
BE
I
I
h
h
h
(sat)
(sat)
(sat)
CBO
CEO
FE-1
FE-2
FE-3
Collector-Emitter Breakdown Voltage IC= 10mA ;IB= 0 B 400 V
Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 9 V
Collector-Emitter Saturation Voltage IC= 1A; IB= 0.25A B 0.5 V
-1
Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.5A 0.6 V
-2
Base-Emitter Saturation Voltage IC= 0.5A; IB= 0.1A 1.2 V
Collector Cutoff Current VCB= 700V; IE= 0 100
Collector Cutoff Current VCE= 400V; IB= 0 250
DC Current Gain IC= 1mA ; VCE= 5V 7
DC Current Gain IC= 0.5A ; VCE= 5V 10 40
DC Current Gain IC= 2A ; VCE= 5V 5
μA
μA
V
ECF
Switching Times
t
s
t
f
C-E Diode Forward Voltage IF= 2A 2.0 V
Storage Time 3.5
I
= 0.25A; VCC= 5V
C
Fall Time
0.8
μs
μs
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