Datasheet mjd5731-d Datasheet

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MJD5731

High Voltage PNP Silicon Power Transistors

Designed for line operated audio output amplifier, SWITCHMODEt power supply drivers and other switching applications.

Features

• 350 V (Min) − V

• 1.0 A Rated Collector Current

• PNP Complements to the MJD47 thru MJD50 Series

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

• These are Pb−Free Packages

MAXIMUM RATINGS

Collector−Emitter Voltage V

Emitter−Base Voltage V

Collector Current − Continuous

Total Power Dissipation @ TC = 25°C

Derate above 25°C

Total Power Dissipation (Note 1)

@ T

= 25°C

Derate above 25°C

Unclamped Inductive Load Energy

(See Figure 10)

Operating and Storage Junction

Temperature Range

THERMAL CHARACTERISTICS

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient (Note 1)

Lead Temperature for Soldering T

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

CEO(sus)

Machine Model, C u 400 V

Rating Symbol Max Unit

CEO

− Peak

Characteristic Symbol Max Unit

E 20 mJ

TJ, T

stg

350 Vdc

5 Vdc

1.0

3.0

0.12

1.56

0.0125

−55 to +150 °C

8.33 °C/W

80 °C/W

260 °C

Adc

W/°C

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SILICON

POWER TRANSISTORS

1.0 AMPERE

350 VOLTS, 15 WATTS

DPAK

CASE 369C

STYLE 1

MARKING DIAGRAM

AYWW

5731G

A = Assembly Location Y = Year WW = Work Week J5731 = Device Code G = Pb−Free Package

ORDERING INFORMATION

Device Package Shipping

MJD5731T4G DPAK

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

2500/Tape & Reel

†

January, 2011 − Rev. 4

1 Publication Order Number:

MJD5731/D

Page 2

MJD5731

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(IC = 30 mAdc, IB = 0)

Collector Cutoff Current

= 250 Vdc, IB = 0)

Collector Cutoff Current

= 350 Vdc, VBE = 0)

Emitter Cutoff Current

= 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 2)

DC Current Gain

= 0.3 Adc, VCE = 10 Vdc)

(IC = 1.0 Adc, VCE = 10 Vdc)

Collector−Emitter Saturation Voltage

= 1.0 Adc, IB = 0.2 Adc)

Base−Emitter On Voltage

= 1.0 Adc, VCE = 10 Vdc)

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product

= 0.2 Adc, VCE = 10 Vdc, f = 2.0 MHz)

Small−Signal Current Gain

= 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Symbol

CEO(sus)

CEO

CES

EBO

CE(sat)

BE(on)

Min

350

−

30 10

−

Max

−

0.1

0.01

0.5

175

−

1.0

1.5

−

Unit

Vdc

mAdc

−

Vdc

MHz

−

200

VCE = 10 V

100

TJ = 150°C

25°C

-55°C

, DC CURRENT GAIN

5.0

3.0

2.0

0.02 0.03 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain

1.4

1.2

0.8

TJ = 25°C

0.6

0.4

0.2 V

@ IC/IB = 5.0

0.02

CE(sat))

0.03

0.05 0.3

0.1

, COLLECTOR CURRENT (AMPS)

0.2

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 2. Collector−Emitter Saturation Voltage

0.50.3

-55°C 150°C

1.0 2.0

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MJD5731

V, VOLTAGE (V)

5.0

2.0

1.0

0.5

0.2

0.1

0.05

, COLLECTOR CURRENT (AMP)

0.02

0.01

5.0

1.4

1.2

1.0

0.8

0.6

0.4

0.2

@ IC/IB = 5.0

BE(sat)

0.05 0.2 2.00.1 0.50.3 1.00.02 0.03

IC, COLLECTOR CURRENT (AMPS)

Figure 3. Base−Emitter Voltage

1.0ms

TC = 25°C

BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT

10 20

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

30 100

TJ = - 55°C

25°C

150°C

100 ms

500 ms

200 300 500

1.4

1.2

@ IC/IB = 5 V

BE(sat)

@ VCE = 4 V

BE(on)

TJ = 25°C

@ IC/IB = 5 V

CE(sat)

0.06 0.2 20.1 0.6 I

, COLLECTOR CURRENT (AMPS)

0.4 1

V, VOLTAGE (VOLTS)

0.8

0.6

0.4

0.2

0.02

0.04

Figure 4. “On” Voltages

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I

− V limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on T

= 150°C; TC is

J(pk)

variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T v 150°C. T

may be calculated from the data in

J(pk)

Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

Figure 5. Forward Bias Safe Operating Area

0.7

0.5

0.3

0.2

0.1

0.07

0.05

r(t), TRANSIENT THERMAL

0.03

RESISTANCE (NORMALIZED)

0.02

0.01

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500

0.01

= r(t) R

JC(t)

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

J(pk)

t, TIME (ms)

- TC = P

(pk) qJC(t)

= 8.33°C/W MAX

Figure 6. Thermal Response

(pk)

DUTY CYCLE, D = t1/t

1 k

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Page 4

BE(off)

TURN-ON PULSE

AP

PROX.

-11 V

MJD5731

0 V

≤ 7.0 ns

100 ≤ t

< 500 ms

< 15 ns

SCOPE

<< C

APPROX. +9.0 V

+4.0 V

DUTY CYCLE ≈ 2.0%

TURN-OFF PULSE

Figure 7. Switching Time Equivalent Circuit

1.0

0.5

0.3 t

0.2

0.1

t, TIME (s)μ

0.05

0.03

0.02

0.01

0.02 0.2 2.00.1

0.03 0.3

0.05

TJ = 25°C V

= 200 V

= 5.0

C/IB

0.5 1.0

IC, COLLECTOR CURRENT (AMPS)

5.0

3.0

2.0

1.0

0.5

t, TIME (s)μ

0.3

0.2

0.1

0.05

0.02 0.2 2.00.1

0.03

0.05

0.3

, COLLECTOR CURRENT (AMPS)

Figure 8. Turn−On Resistive Switching Times Figure 9. Resistive Turn−Off Switching Times

TJ = 25°C V

= 200 V

= 5.0

C/IB

0.5 1.0

INPUT

Test Circuit Voltage and Current Waveforms

tw ≈ 3 ms

MONITOR

INPUT

MJE171

BB1

150 W

= 10 V

BB1

R 100 W

BB2

V 0

BB2

TUT

100 mH

VCC = 20 V

MONITOR

0.1 W

VOLTAGE

COLLECTOR CURRENT

COLLECTOR VOLTAGE

0 V

-5 V

0.63 A

0 V

CER

(SEE NOTE 1)

100 ms

10 V

CE(sat)

Figure 10. Inductive Load Switching

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Page 5

12 3

0.005 (0.13) C

DETAIL A

MJD5731

PACKAGE DIMENSIONS

DPAK

CASE 369C−01

ISSUE D

GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

SOLDERING FOOTPRINT*

6.20

0.244

2.58

0.101

3.0

0.118

SEATING PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.

DIM MIN MAX MIN MAX

A 0.086 0.094 2.18 2.38

A1 0.000 0.005 0.00 0.13

b 0.025 0.035 0.63 0.89 b2 0.030 0.045 0.76 1.14 b3 0.180 0.215 4.57 5.46

c 0.018 0.024 0.46 0.61 c2 0.018 0.024 0.46 0.61

D 0.235 0.245 5.97 6.22

E 0.250 0.265 6.35 6.73

e 0.090 BSC 2.29 BSC

H 0.370 0.410 9.40 10.41

L 0.055 0.070 1.40 1.78 L1 0.108 REF 2.74 REF L2 0.020 BSC 0.51 BSC L3 0.035 0.050 0.89 1.27 L4 −−− 0.040 −−− 1.01

Z 0.155 −−− 3.93 −−−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

5.80

0.228

1.6

0.063

SCALE 3:1

6.172

0.243

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC (SCILLC).

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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MJD5731/D