Datasheet mjd47_mjd50 Datasheet

MJD47, MJD50

High Voltage Power
Transistors

DPAK For Surface Mount Applications

Designed for line operated audio output amplifier,
SWITCHMODEt power supply drivers and other switching
applications.

http://onsemi.com

Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves

(No Suffix)

• Electrically Similar to Popular TIP47, and TIP50

• 250 and 400 V (Min) − V

CEO(sus)

• 1 A Rated Collector Current

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

• These are Pb−Free Packages

MAXIMUM RATINGS

Rating Symbol Max Unit

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage V

Collector Current − Continuous

Base Current I

Total Power Dissipation

@ T

= 25°C

C

Derate above 25°C

Total Power Dissipation (Note 1)

@ T

= 25°C

A

Derate above 25°C

Operating and Storage Junction

Temperature Range

− Peak

MJD47
MJD50

MJD47
MJD50

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance Junction−to−Case

Thermal Resistance Junction−to−Ambient
(Note 1)

Lead Temperature for Soldering Purpose T

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

V

CEO

V

I

P

P

TJ, T

R

q

R

CB

EB

C

B

D

D

−65 to +150 °C

stg

JC

q

JA

L

250
400

350
500

5 Vdc

1
2

0.6 mAdc

15

0.12

1.56

0.0125

8.33 °C/W

80 °C/W

260 °C

W/°C

W/°C

Vdc

Vdc

Adc

W

W

NPN SILICON POWER

TRANSISTORS

1 AMPERE

250, 400 VOLTS, 15 WATTS

4

2

1

3

DPAK

CASE 369C

STYLE 1

MARKING DIAGRAM

AYWW

JxxG

A = Assembly Location
Y = Year
WW = Work Week
Jxx = Device Code

G=Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.

xx = 47 or 50

© Semiconductor Components Industries, LLC, 2011

January, 2011 − Rev. 10

1 Publication Order Number:

MJD47/D

MJD47, MJD50

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(I

= 30 mAdc, IB = 0) MJD50

C

Collector Cutoff Current

(V

= 150 Vdc, IB = 0) MJD47

CE

(VCE = 300 Vdc, IB = 0) MJD50

Collector Cutoff Current

(V

= 350 Vdc, VBE = 0) MJD47

CE

(VCE = 500 Vdc, VBE = 0) MJD50

Emitter Cutoff Current

(V

= 5 Vdc, IC = 0)

BE

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 0.3 Adc, VCE = 10 Vdc)
(IC = 1 Adc, VCE = 10 Vdc)

Collector−Emitter Saturation Voltage

(I

= 1 Adc, IB = 0.2 Adc)

C

Base−Emitter On Voltage

(IC = 1 Adc, VCE = 10 Vdc)

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product

(I

= 0.2 Adc, VCE = 10 Vdc, f = 2 MHz)

C

Small−Signal Current Gain

(I

= 0.2 Adc, VCE = 10 Vdc, f = 1 kHz)

C

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

MJD47

Symbol

V

CEO(sus)

I

CEO

I

CES

I

EBO

h

FE

V

CE(sat)

V

BE(on)

f

T

h

fe

Min

Max

250
400

−

−

−

−

−

3010150

−

−

10

25

0.2

0.2

0.1

0.1

1.5

Unit

Vdc

−

−

mAdc

mAdc

1

mAdc

−

−

1

−

−

Vdc

Vdc

MHz

−

2.5

1.5

0.5

, POWER DISSIPATION (WATTS)

D

P

TAT

2

1

0

TYPICAL CHARACTERISTICS

C

25

TURN-ON PULSE

APPROX

20

15

TA (SURFACE MOUNT)

T

10

C

+11 V

V

V

EB(off)

APPROX

0

in

t

1

+11 V

5

0

25

50 75 100 125 150

T, TEMPERATURE (°C)

Figure 1. Power Derating

V

in

t

2

TURN-OFF PULSE

Figure 2. Switching Time Equivalent Circuit

V

CC

V

t

3

10 < t

DUTY CYCLE ≈ 2%
APPROX -9 V

R

C

in

R

B

51

-4 V

eb

and RC VARIED TO OBTAIN

B

t

≤ 7 ns

1

< 500 ms

2

< 15 ns

t

3

<< C

C

jd

R
DESIRED CURRENT LEVELS.

SCOPE

http://onsemi.com

2

MJD47, MJD50

200

100

, DC CURRENT GAIN

FE

h

0.07

0.05

r(t), TRANSIENT THERMAL

0.03

RESISTANCE (NORMALIZED)

0.02

60
40

20

10

0.7

0.5

0.3

0.2

0.1

6
4

2

0.02

1

TJ = 150°C

0.02

SINGLE PULSE

VCE = 10 V

25°C

-55°C

0.06 0.2 2

0.04

0.1 0.6

I

, COLLECTOR CURRENT (AMPS)

C

0.4 1

Figure 3. DC Current Gain

D = 0.5

0.2

0.1

0.05

0.01

1.4

1.2

1

0.8

0.6

V, VOLTAGE (VOLTS)

0.4

0.2

0

0.02

0.06 0.2 20.1 0.6

0.04
I

, COLLECTOR CURRENT (AMPS)

C

Figure 4. “On” Voltages

R

= r(t) R

q

JC(t)

R

q

JC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

J(pk)

q

- TC = P

JC

1

(pk) qJC(t)

= 8.33°C/W MAX

V

V

@ IC/IB = 5

BE(sat)

V

BE(on)

TJ = 25°C

@ IC/IB = 5

CE(sat)

P

(pk)

DUTY CYCLE, D = t1/t

@ VCE = 4 V

t

1

t

2

0.4 1

2

0.5

0.2

0.1

0.05

, COLLECTOR CURRENT (AMP)

0.02

C

I

0.01

0.005

0.01

5

2

1

5

0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500

0.01

1ms

TC ≤ 25°C

SECOND BREAKDOWN LIMIT
THERMAL LIMIT @ 25°C
WIRE BOND LIMIT

CURVES APPLY BELOW
RATED V

CEO

20 20010

V

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

500ms

dc

MJD47

MJD50

10050 300

Figure 6. Active Region Safe Operating Area

100ms

t, TIME (ms)

Figure 5. Thermal Response

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 6 is based on T
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. T
Figure 5. At high case temperatures, thermal limitations will

500

reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

= 150_C; TC is

J(pk)

may be calculated from the data in

J(pk)

C

− V

1 k

CE

J(pk)

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3

MJD47, MJD50

5

t

2

s

1

0.5

0.2

1

TJ = 25°C
V

= 200 V

CC

= 5

I

t

r

C/IB

TJ = 25°C
V

= 200 V

0.1

t, TIME (s)μ

0.05

0.02

0.01

0.02 0.2 20.1

0.05

t

d

0.5 1

IC, COLLECTOR CURRENT (AMPS)

0.5

t, TIME (s)μ

0.2

0.1

0.05

0.02 0.2 20.1

0.05

t

f

I

, COLLECTOR CURRENT (AMPS)

C

CC

I

C/IB

0.5 1

= 5

Figure 7. Turn−On Time Figure 8. Turn-Off Time

ORDERING INFORMATION

Device Package Shipping

MJD47G 369C

(Pb−Free)

MJD47T4G 369C

(Pb−Free)

MJD50G 369C

(Pb−Free)

MJD50T4G 369C

(Pb−Free)

75 Units / Rail

2500 / Tape & Reel

75 Units / Rail

2500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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4

L3

L4

b2

e

E

b3

4

12 3

A

B

D

b

0.005 (0.13) C

DETAIL A

M

MJD47, MJD50

PACKAGE DIMENSIONS

DPAK

CASE 369C−01

ISSUE D

C

A

c2

H

c

GAUGE

L2

PLANE

L

L1

DETAIL A

ROTATED 90 CW5

SOLDERING FOOTPRINT*

6.20

0.244

2.58

0.101

A1

H

3.0

0.118

C

Z

SEATING
PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI­MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.

DIM MIN MAX MIN MAX

A 0.086 0.094 2.18 2.38

A1 0.000 0.005 0.00 0.13

b 0.025 0.035 0.63 0.89
b2 0.030 0.045 0.76 1.14
b3 0.180 0.215 4.57 5.46

c 0.018 0.024 0.46 0.61
c2 0.018 0.024 0.46 0.61

D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73

e 0.090 BSC 2.29 BSC

H 0.370 0.410 9.40 10.41

L 0.055 0.070 1.40 1.78
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
L3 0.035 0.050 0.89 1.27
L4 −−− 0.040 −−− 1.01

Z 0.155 −−− 3.93 −−−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

5.80

0.228

1.6

0.063

SCALE 3:1

6.172

0.243

ǒ

inches

mm

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC (SCILLC).

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MJD47/D

5