Datasheet MJD47, MJD50 Datasheet (Motorola)

1

Motorola Bipolar Power Transistor Device Data

   

DPAK For Surface Mount Applications

Designed for line operated audio output amplifier, switchmode power supply drivers

and other switching applications.

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves (“–1” Suffix)

• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

• Electrically Similar to Popular TIP47, and TIP50

• 250 and 400 V (Min) — V

CEO(sus)

• 1 A Rated Collector Current

MAXIMUM RATINGS

Rating

Symbol

MJD47

MJD50

Unit

Collector–Emitter Voltage

V

CEO

250

400

Vdc

Collector–Base Voltage

V

CB

350

500

Vdc

Emitter–Base Voltage

V

EB

5

Vdc

Collector Current — Continuous

Peak

I

C

1
2

Adc

Base Current

I

B

0.6

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25_C

P

D

15

0.12

Watts
W/_C

Total Power Dissipation* @ TA = 25_C

Derate above 25_C

P

D

1.56

0.0125

Watts
W/_C

Operating and Storage Junction

Temperature Range

TJ, T

stg

–65 to +150

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

8.33

_

C/W

Thermal Resistance, Junction to Ambient*

R

θJA

80

_

C/W

Lead Temperature for Soldering Purpose

T

L

260

_

C

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1) MJD47

(IC = 30 mAdc, IB = 0) MJD50

V

CEO(sus)

250
400

—
—

Vdc

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0) MJD47
(VCE = 300 Vdc, IB = 0) MJD50

I

CEO

—
—

0.2

0.2

mAdc

*When surface mounted on minimum pad sizes recommended. (continued)
(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%.

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJD47/D

 Motorola, Inc. 1995

NPN SILICON

POWER TRANSISTORS

1 AMPERE

250, 400 VOLTS

15 WATTS




*Motorola Preferred Device

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

0.243

6.172

0.063

1.6

0.118

3.0

0.07

1.8

0.165

4.191

0.190

4.826

inches

mm

CASE 369A–13

CASE 369–07




REV 1

 

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS – continued (T

C

= 25_C unless otherwise noted)

Characteristic

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Symbol

Min

Max

ÎÎÎ

ÎÎÎ

ÎÎÎ

Unit

OFF CHARACTERISTICS — continued

Collector Cutoff Current

(VCE = 350 Vdc, VBE = 0) MJD47
(VCE = 500 Vdc, VBE = 0) MJD50

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

I

CES

—
—

0.1

0.1

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

I

EBO

—

1

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 0.3 Adc, VCE = 10 Vdc)
(IC = 1 Adc, VCE = 10 Vdc)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

h

FE

30
10

150

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

—

Collector–Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.2 Adc)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

V

CE(sat)

—

1

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Base–Emitter On Voltage

(IC = 1 Adc, VCE = 10 Vdc)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

V

BE(on)

—

1.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product

(IC = 0.2 Adc, VCE = 10 Vdc, f = 2 MHz)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

f

T

10

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

MHz

Small–Signal Current Gain

(IC = 0.2 Adc, VCE = 10 Vdc, f = 1 kHz)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

h

fe

25

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

—

(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%.

25

25

Figure 1. Power Derating

T, TEMPERATURE (°C)

0

50 75 100 125 150

20

15

10

5

P

D

, POWER DISSIPATION (WATTS)

Figure 2. Switching Time Equivalent Circuit

APPROX

+11 V

R

B

–4 V

t

1

SCOPE

V

CC

R

C

51

RB and RC VARIED TO OBTAIN
DESIRED CURRENT LEVELS.

2.5

0

2

1.5

1

0.5

TAT

C

T

C

DUTY CYCLE

≈

2%

APPROX –9 V

t1

≤

7 ns

10 < t2 < 500

µ

s

t3 < 15 ns

Vin 0

Cjd << C

eb

V

in

t

2

t

3

APPROX

+11 V

V

in

TURN–ON PULSE

TA (SURFACE MOUNT)

V

EB(off)

TURN–OFF PULSE

TYPICAL CHARACTERISTICS

 

3

Motorola Bipolar Power Transistor Device Data

0.02
IC, COLLECTOR CURRENT (AMPS)

1

0.8

V, VOLTAGE (VOLTS)

1.4

1.2

0.4

0

0.6

0.2

V

BE(sat)

@ IC/IB = 5 V

V

BE(on)

@ VCE = 4 V

V

CE(sat)

@ IC/IB = 5 V

0.02
IC, COLLECTOR CURRENT (AMPS)

2

0.06 0.2 2

40

10

100

h

FE

, DC CURRENT GAIN

VCE = 10 V

TJ = 150°C

60

0.1 0.6

25°C

–55°C

20

0.04

0.4 1

200

4

6

Figure 3. DC Current Gain

t, TIME (ms)

1

0.01
1 k

0.3

0.2

0.07

r(t), TRANSIENT THERMAL

R

θ

JC(t)

= r(t) R

θ

JC

R

θ

JC

= 8.33

°

C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t

1

T

J(pk)

– TC = P

(pk)

θ

JC(t)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

0.01

RESISTANCE (NORMALIZED)

Figure 4. “On” Voltages

0.7

Figure 5. Thermal Response

0.5

0.1

0.05

0.03

0.02

0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500

0.06 0.2 20.1 0.6

0.04

0.4 1

0.2

SINGLE PULSE

D = 0.5

0.05

TJ = 25°C

0.1

0.02

0.01

I

C

, COLLECTOR CURRENT (AMP)

5

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.005
500

1

0.2

0.05

0.02

SECOND BREAKDOWN LIMIT
THERMAL LIMIT @ 25

°

C

WIRE BOND LIMIT

20 20010

TC ≤ 25°C

100µs

1 ms

dc

0.01

0.1

0.5

2

5

Figure 6. Active Region Safe Operating Area

10050 300

CURVES APPLY BELOW
RATED V

CEO

MJD50

MJD47

500µs

There are two limitations on the power handling ability of a
transistor: average junction temperature and second break­down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa­tion than the curves indicate.

The data of Figure 6 is based on T

J(pk)

= 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 1 0% provided T

J(pk)

v

150_C. T

J(pk)

may be calculated from the data in Fig­ure 5. At high case temperatures, thermal limitations will re­duce the power that can be handled to values less than the
limitations imposed by second breakdown.

 

4

Motorola Bipolar Power Transistor Device Data

0.02 0.2 20.1

0.05

0.5 1

5

IC, COLLECTOR CURRENT (AMPS)

TJ = 25°C
VCC = 200 V
IC/IB = 5

t, TIME ( s)

µ

2

1

0.5

0.2

0.1

0.05

Figure 7. Turn–On Time Figure 8. Turn-Off Time

IC, COLLECTOR CURRENT (AMPS)

0.01

t, TIME ( s)

µ

1

0.5

0.1

0.05

0.02

0.02 0.2 20.1

0.05

0.5 1

t

r

t

d

t

s

t

f

TJ = 25°C
VCC = 200 V
IC/IB = 5

0.2

 

5

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 369A–13

ISSUE W

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

1 2 3

4

V

S

A

K

–T–

SEATING
PLANE

R

B

F

G

D

3 PL

M

0.13 (0.005) T

C

E

J

H

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.235 0.250 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.033 0.040 0.84 1.01
F 0.037 0.047 0.94 1.19
G

0.090 BSC 2.29 BSC

H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.175 0.215 4.45 5.46
S 0.050 0.090 1.27 2.28
V 0.030 0.050 0.77 1.27

CASE 369–07

ISSUE K

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

D

A

K

B

R

V

S

F

L

G

2 PL

M

0.13 (0.005) T

E

C

U

J

H

–T–

SEATING
PLANE

Z

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.235 0.250 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.033 0.040 0.84 1.01
F 0.037 0.047 0.94 1.19
G 0.180 BSC 4.58 BSC
H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89
L 0.090 BSC 2.29 BSC
R 0.175 0.215 4.45 5.46
S 0.020 0.050 0.51 1.27
U 0.020 ––– 0.51 –––
V 0.030 0.050 0.77 1.27
Z 0.138 ––– 3.51 –––

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

1 2 3

4

 

6

Motorola Bipolar Power Transistor Device Data

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MJD47/D

*MJD47/D*

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