Datasheet MJD45H11T4G Specification

MJD44H11(NPN),
MJD45H11(PNP)

Complementary Power
Transistors

DPAK for Surface Mount Applications

Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.

Features

• Lead Formed for Surface Mount Application in Plastic Sleeves

(No Suffix)

• Straight Lead Version in Plastic Sleeves (“−1” Suffix)

• Electrically Similar to Popular D44H/D45H Series

• Low Collector Emitter Saturation Voltage

• Fast Switching Speeds

• Complementary Pairs Simplifies Designs

• Epoxy Meets UL 94 V−0 @ 0.125 in

• NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (T

sign, “−”, for PNP omitted, unless otherwise noted)

Rating Symbol Max Unit

Collector−Emitter Voltage V
Emitter−Base Voltage V
Collector Current − Continuous I
Collector Current − Peak I
Total Power Dissipation

@ T

= 25°C

C

Derate above 25°C

Total Power Dissipation (Note 1)

@ T

= 25°C

A

Derate above 25°C

Operating and Storage Junction
Temperature Range

ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

= 25_C, common for NPN and PNP, minus

A

CEO

CM

P

P

TJ, T

EB
C

D

D

stg

80 Vdc

5 Vdc
8 Adc

16 Adc

20

0.16

1.75

0.014

−55 to +150 °C

W

W/°C

W

W/°C

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SILICON

POWER TRANSISTORS

8 AMPERES

80 VOLTS, 20 WATTS

COMPLEMENTARY

1

4

COLLECTOR

2, 4

3

EMITTER

1

2

3

IPAK

CASE 369D

STYLE 1

AYWW

J4

xH11G

IPAKDPAK

4

COLLECTOR

2, 4

1

BASE

2

1

3

DPAK

CASE 369C

STYLE 1

3

EMITTER

4

BASE

1

2

3

DPAK

CASE 369G

STYLE 1

MARKING DIAGRAMS

AYWW

J4

xH11G

A = Assembly Location
Y = Year
WW = Work Week
J4xH11 = Device Code

G = Pb−Free Package

x = 4 or 5

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.

© Semiconductor Components Industries, LLC, 2016

September, 2016 − Rev. 20

1 Publication Order Number:

MJD44H11/D

MJD44H11 (NPN), MJD45H11 (PNP)

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient (Note 2)
Lead Temperature for Soldering T

2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

ELECTRICAL CHARACTERISTICS

(T

= 25_C, common for NPN and PNP, minus sign, “−”, for PNP omitted, unless otherwise noted)

A

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

= 30 mA, IB = 0)

(I

C

Collector Cutoff Current

(V

= Rated V

CE

CEO

, VBE = 0)

Emitter Cutoff Current

(V

= 5 Vdc)

EB

ON CHARACTERISTICS

Collector−Emitter Saturation Voltage

= 8 Adc, IB = 0.4 Adc)

(I

C

Base−Emitter Saturation Voltage

(I

= 8 Adc, IB = 0.8 Adc)

C

DC Current Gain

(V

= 1 Vdc, IC = 2 Adc)

CE

= 1 Vdc, IC = 4 Adc)

(V

CE

DYNAMIC CHARACTERISTICS

Collector Capacitance

= 10 Vdc, f

(V

CB

MJD44H11

= 1 Mhz)

test

MJD45H11

Gain Bandwidth Product

(I

= 0.5 Adc, VCE = 10 Vdc, f = 20 Mhz)

C

MJD44H11
MJD45H11

SWITCHING TIMES

Symbol Min Typ Max Unit

V

CEO(sus)

I

CES

I

EBO

V

CE(sat)

V

BE(sat)

h

FE

80 − −

− − 1.0

− − 1.0

− − 1

− − 1.5

60
40

C

cb

−

−

f

T

−

−

R
R

130

45

85
90

q

JC

q

JA
L

6.25 °C/W

71.4 °C/W
260 °C

Vdc

mA

mA

Vdc

Vdc

−

−

−

−

−

pF

−

−
MHz

−

−

Delay and Rise Times

(I

= 5 Adc, IB1 = 0.5 Adc)

C

MJD44H11
MJD45H11

Storage Time

(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)

MJD44H11
MJD45H11

Fall Time

(I

= 5 Adc, IB1 = IB2 = 0.5 Adc)

C

MJD44H11
MJD45H11

td + t

t

s

t

r

−

−

300
135

−

−

ns

ns

−

−

f

−

−

500
500

140
100

−

−

ns

−

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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2

1

0.7
D = 0.5

0.5

0.3

0.2

0.1

0.05

0.07

0.02

0.05

0.03

RESISTANCE (NORMALIZED)

SINGLE PULSE

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

0.01

0.01

MJD44H11 (NPN), MJD45H11 (PNP)

0.2
P

R

= r(t) R

q

0.1

0.01

0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500

JC(t)

R

q

JC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

J(pk)

t, TIME (ms)

q

- TC = P

JC

1

(pk) qJC(t)

= 6.25°C/W MAX

Figure 1. Thermal Response

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

1 k

20

10

5
3

2

1

0.5

0.3

, COLLECTOR CURRENT (AMP)

0.1

C

I

0.05

0.02

500ms

5ms

dc

100ms

1ms

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I

− V

C

CE

limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

There are two limitations on the power handling ability of

THERMAL LIMIT @ TC = 25°C
WIRE BOND LIMIT

The data of Figure 2 is based on T
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
≤ 150_C. T

may be calculated from the data in

J(pk)

= 150_C; TC is

J(pk)

J(pk)

Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the

1

3 100

5 7 20 7010

V

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

5030

Figure 2. Maximum Forward Bias

Safe Operating Area

TAT

C

25

2.5

20

2

T

1.5

15

C

limitations imposed by second breakdown.

0.5

, POWER DISSIPATION (WATTS)

D

P

10

1

5

0

0

25

T

A

SURFACE

MOUNT

50 75 100 125 150

T, TEMPERATURE (°C)

Figure 3. Power Derating

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3

MJD44H11 (NPN), MJD45H11 (PNP)

1000

, DC CURRENT GAINV

FE

h

1000

100

10

100

VCE = 1 V

1000

150°C

150°C

100

25°C

−55°C

25°C

−55°C

, DC CURRENT GAIN

FE

h

10

1010.10.01

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

Figure 4. MJD44H11 DC Current Gain Figure 5. MJD45H11 DC Current Gain

VCE = 4 V

150°C

25°C

−55°C

1000

100

150°C

25°C

−55°C

VCE = 1 V

1010.10.01

VCE = 4 V

, DC CURRENT GAIN

FE

h

10

IC, COLLECTOR CURRENT (A)

Figure 6. MJD44H11 DC Current Gain Figure 7. MJD45H11 DC Current Gain

0.8
IC/IB = 20

0.7

0.6

0.5

0.4

0.3

0.2

0.1

, COLL−EMIT SATURATION VOLTAGE (V)

0

CE(sat)

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 8. MJD44H11 Saturation Voltage

V

CE(sat)

25°C

150°C

−55°C

, DC CURRENT GAIN

FE

h

10

1010.10.01

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

, COLL−EMIT SATURATION VOLTAGE (V)

0

1010.10.01

CE(sat)

V

, COLLECTOR CURRENT (A)

I

C

IC/IB = 20

−55°C

25°C

IC, COLLECTOR CURRENT (A)

Figure 9. MJD45H11 Saturation Voltage

V

CE(sat)

1010.10.01

150°C

1010.10.01

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4

MJD44H11 (NPN), MJD45H11 (PNP)

1.4

1.2

1.0

0.8

0.6

VOLTAGE (V)

0.4

, BASE−EMIT SATURATION

0.2

BE(sat)

V

0

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

, COLLECTOR−EMITTER VOLTAGE (V)C, CAPACITANCE (pF)

0

CE

V

−55°C
25°C

150°C

IC/IB = 20

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 10. MJD44H11 Saturation Voltage

V

BE(sat)

TA = 25°C

IC = 8 A

IC = 3 A

0.5 AIC = 0.1 A

1 A

IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)

Figure 12. MJD44H11 Collector Saturation

Region

1.4

1.2

1.0

−55°C

0.8
25°C

0.6

VOLTAGE (V)

150°C

0.4

, BASE−EMIT SATURATION

0.2

BE(sat)

V

1010.10.01

0

IC/IB = 20

1010.10.01

Figure 11. MJD45H11 Saturation Voltage

V

BE(sat)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

, COLLECTOR−EMITTER VOLTAGE (V)

IC = 0.1 A

0

CE

10,00010001001010.1

V

0.5 A

IC = 3 A

1 A

TA = 25°C

IC = 8 A

10,00010001001010.1

Figure 13. MJD45H11 Collector Saturation

Region

1000

100

10

1000

Cob

Cob

100

C, CAPACITANCE (pF)

1001010.1

VR, REVERSE VOLTAGE (V)

10

V

, REVERSE VOLTAGE (V)

R

Figure 14. MJD44H11 Capacitance Figure 15. MJD45H11 Capacitance

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5

1001010.1

MJD44H11 (NPN), MJD45H11 (PNP)

100

VCE = 2 V

PRODUCT

, CURRENT−GAIN−BANDWIDTH

Tau

f

10

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 16. MJD44H11

Current−Gain−Bandwidth Product

100

, CURRENT−GAIN−BANDWIDTH

Tau

f

1010.10.01

VCE = 2 V

PRODUCT

10

Current−Gain−Bandwidth Product

1010.10.01

Figure 17. MJD45H11

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6

MJD44H11 (NPN), MJD45H11 (PNP)

ORDERING INFORMATION

Device Package Type Package Shipping

MJD44H11G DPAK

(Pb−Free)

NJVMJD44H11G DPAK

(Pb−Free)

MJD44H11−1G DPAK−3

(Pb−Free)

MJD44H11RLG DPAK

(Pb−Free)

NJVMJD44H11RLG* DPAK

(Pb−Free)

MJD44H11T4G DPAK

(Pb−Free)

NJVMJD44H11T4G* DPAK

(Pb−Free)

MJD44H11T5G DPAK

(Pb−Free)

MJD45H11G DPAK

(Pb−Free)

NJVMJD45H11G* DPAK

(Pb−Free)

MJD45H11−1G DPAK−3

(Pb−Free)

MJD45H11RLG DPAK

(Pb−Free)

NJVMJD45H11RLG* DPAK

(Pb−Free)

MJD45H11T4G DPAK

(Pb−Free)

NJVMJD45H11T4G* DPAK

(Pb−Free)

NJVMJD44H11D3T4G* DPAK

(Pb−Free)

NJVMJD45H11D3T4G* DPAK

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP

Capable

369C 75 Units / Rail

369C 75 Units / Rail

369D 75 Units / Rail

369C 1,800 / Tape & Reel

369C 1,800 / Tape & Reel

369C 2,500 / Tape & Reel

369C 2,500 / Tape & Reel

369C 2,500 / Tape & Reel

369C 75 Units / Rail

369C 75 Units / Rail

369D 75 Units / Rail

369C 1,800 / Tape & Reel

369C 1,800 / Tape & Reel

369C 2,500 / Tape & Reel

369C 2,500 / Tape & Reel

369G 2,500 / Tape & Reel

369G 2,500 / Tape & Reel

†

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7

L3

L4

b2

L2

12 3

e

TOP VIEW

GAUGE
PLANE

DETAIL A

ROTATED 90 CW5

MJD44H11 (NPN), MJD45H11 (PNP)

PACKAGE DIMENSIONS

DPAK (SINGLE GAUGE)

CASE 369C

ISSUE F

NOTES:

E

b3

4

B

D

NOTE 7

b

0.005 (0.13) C

DETAIL A

c

SIDE VIEW

M

H

SEATING

C

PLANE

L

L1

A1

C

A

c2

H

BOTTOM VIEW

Z

BOTTOM VIEW

ALTERNATE

CONSTRUCTIONS

SOLDERING FOOTPRINT*

A

6.20

0.244

2.58

0.102

3.00

0.118

1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI­MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL

Z

Z

NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.

7. OPTIONAL MOLD FEATURE.

DIM MIN MAX MIN MAX

A 0.086 0.094 2.18 2.38

A1 0.000 0.005 0.00 0.13

b 0.025 0.035 0.63 0.89
b2 0.028 0.045 0.72 1.14
b3 0.180 0.215 4.57 5.46

c 0.018 0.024 0.46 0.61
c2 0.018 0.024 0.46 0.61

D 0.235 0.245 5.97 6.22

E 0.250 0.265 6.35 6.73

e 0.090 BSC 2.29 BSC

H 0.370 0.410 9.40 10.41

L 0.055 0.070 1.40 1.78
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
L3 0.035 0.050 0.89 1.27
L4 −−− 0.040 −−− 1.01

Z 0.155 −−− 3.93 −−−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

5.80

0.228

1.60

0.063

SCALE 3:1

6.17

0.243

ǒ

inches

mm

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

www.onsemi.com

8

V

P

al

S

−T−

SEATING
PLANE

F

B

R

4

123

G

MJD44H11 (NPN), MJD45H11 (PNP)

A

K

3 PL

D

0.13 (0.005) T

PACKAGE DIMENSIONS

IPAK

CASE 369D

ISSUE C

C

E

J

H

M

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

Z

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
F 0.037 0.045 0.94 1.14

0.090 BSC 2.29 BSC

G
H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1.01
V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

DPAK−3, SURFACE MOUNT

CASE 369G

ISSUE O

SEATING

−T−

PLANE

B

V

R

4

A

123

C

E

Z

U

K

F

L

G

D

2 PL

J

H

0.13 (0.005) T

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NOTES:

1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.22
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
F 0.037 0.045 0.94 1.14
G 4.58 BSC

0.180 BSC

H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89
L 0.090 BSC 2.29 BSC
R 0.180 0.215 4.57 5.45
U 0.020 −−− 0.51 −−−
V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

UBLICATION ORDERING INFORMATION

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MJD44H11/D

9