Page 1
MJD45H11
General Purpose Power and Switching Such
as Output or Driver Stages in Applications
D-PAK for Surface Mount Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK: “-I” Suffix)
• Electrically Similar to Popular MJE45H
• Fast Switching Speeds
• Low Collector Emitter Saturation Voltage
PNP Epitaxial Silicon Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
MJD45H11
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
EBO
I
C
I
CP
PC
T
J
T
STG
Electrical Characteristics
Collector-Emitter Voltage - 80 V
Emitter-Base Voltage - 5 V
Collector Current (DC) - 8 A
Collector Current (Pulse) - 16 A
Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (T
=25°C) 1.75 W
a
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) *Collector-Emitter Sustaining Voltage IC = - 30mA, IB = 0 - 80 V
CEO
I
CEO
I
EBO
hFE
(sat) *Collector-Emitter Saturation Voltage IC = - 8A, IB = - 0.4A - 1 V
V
CE
(on) *Base-Emitter Saturation Voltage IC = - 8A, IB = - 0.8A - 1.5 V
V
BE
f
T
Cob
tON
tSTG
tF
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector Cut-off Current V
Emitter Cut-off Cu rr e nt V
*DC Current Gain V
= - 80V, IB = 0 - 10 µA
CE
= - 5V, IC = 0 - 50 µA
BE
= - 1V, IC = - 2A
CE
V
= - 1V, IC = - 4A
CE
60
40
Current Gain Bandwidth Product VCE= - 10A, IC = - 0.5A 40 MHz
Collector Capacitance V
Turn On Time IC = - 5A
Storage Time 500 ns
= - 10V, f = 1MHz 230 pF
CB
135 ns
= - IB2 = - 0.5A
I
B1
Fall Time 100 ns
©2003 Fairchild Semiconductor Corporation Rev. C2, July 2003
Page 2
Typical Characteristics
MJD45H11
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Safe Operating Area
25
20
15
10
VCE = -1V
-100
ICP(max)
-10
IC(max)
-1
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-1 -1 0 -100 -1000
100
µ
s
500
µ
s
1ms
5ms
DC
VCE[V], COLLECTOR-EMITTER VOLTAGE
5
[W], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 3. Power Derating
©2003 Fairchild Semiconductor Corporation
Rev. C2, July 2003
Page 3
Package Dimensions
6.60 ±0.20
5.34 ±0.30
D-PAK
(4.34)(0.50) (0.50)
0.70 ±0.20
MJD45H11
2.30 ±0.10
0.50 ±0.10
0.60 ±0.20
0.80 ±0.20
MAX0.96
2.30TYP
[2.30±0.20]
2.70 ±0.20
0.76 ±0.10
2.30TYP
[2.30±0.20]
9.50 ±0.30
6.10 ±0.20
6.10 ±0.20
9.50 ±0.30
2.70 ±0.20
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(2XR0.25)
±0.10
0.91
0.89 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
(0.70)
0.76 ±0.10
MIN0.55
(1.00)
(0.90)
(0.10) (3.05)
©2003 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. C2, July 2003
Page 4
MJD45H11
Package Dimensions
6.60
5.34
(0.50) (0.50)(4.34)
±0.20
0.60
±0.10
0.80
MAX0.96
0.76
±0.10
(Continued)
±0.20
±0.20
I-PAK
±0.20
±0.20
0.70
6.10
±0.20
±0.30
1.80
9.30
2.30
0.50
±0.20
±0.10
±0.30
16.10
0.50
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
±0.10
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation Rev. C2, July 2003
Rev. C2, July 2003©2003 Fairchild Semiconductor Corporation
Page 5
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
2
CMOS™
E
EnSigna™
FACT™
FACT Quiet Series™
®
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
2
C™
I
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET
®
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
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TruTranslation™
UHC™
UltraFET
®
VCX™
®
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2003 Fairchild Semiconductor Corporation Rev. I3
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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