Datasheet MJD31CG, MJD32CG Specification

MJD31, NJVMJD31T4G,
MJD31C, NJVMJD31CT4G
(NPN), MJD32,
NJVMJD32T4G, MJD32C,
NJVMJD32CG,
NJVMJD32CT4G (PNP)

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Complementary Power
Transistors

DPAK For Surface Mount Applications

Designed for general purpose amplifier and low speed switching

applications.

Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves

• Straight Lead Version in Plastic Sleeves (“1” Suffix)

• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

• Electrically Similar to Popular TIP31 and TIP32 Series

• Epoxy Meets UL 94, V−0 @ 0.125 in

• NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

SILICON

POWER TRANSISTORS

3 AMPERES

40 AND 100 VOLTS

15 WATTS

COMPLEMENTARY

COLLECTOR

2,4

1

BASE

EMITTER

1

2

3

DPAK

CASE 369C

STYLE 1

3

4

1

BASE

1

CASE 369D

COLLECTOR

EMITTER

2

3

IPAK

STYLE 1

2,4

3

4

© Semiconductor Components Industries, LLC, 2013

November, 2013 − Rev. 13

MARKING DIAGRAMS

AYWW

J3xxG

DPAK IPAK

A = Site Code
Y = Year
WW = Work Week
xx = 1, 1C, 2, or 2C
G = Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.

1 Publication Order Number:

YWW

J3xxG

MJD31/D

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

MAXIMUM RATINGS

Rating Symbol Max Unit

Collector−Emitter Voltage

MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G
MJD31C, NJVMJD31CG, NJVMJD31CRLG, NJVMJD31CT4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G

Collector−Base Voltage

MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G
MJD31C, NJVMJD31CG, NJVMJD31CRLG, NJVMJD31CT4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G

Emitter−Base Voltage V

Collector Current − Continuous I

Collector Current − Peak I

Base Current I

Total Power Dissipation

@ T

= 25°C

C

Derate above 25°C

Total Power Dissipation

@ T

= 25°C

A

Derate above 25°C

Operating and Storage Junction Temperature Range TJ, T

ESD − Human Body Model HBM 3B V

ESD − Machine Model MM C V

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.

V

CEO

V

CM

P

P

CB

EB

C

B

40

Vdc

100

Vdc

40

100

5.0 Vdc

3.0 Adc

5.0 Adc

1.0 Adc

D

15

W

W/°C

0.12

D

1.56

0.012

stg

−65 to + 150 °C

W

W/°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient*

Lead Temperature for Soldering Purposes T

*These ratings are applicable when surface mounted on the minimum pad sizes recommended.

R

q

JC

R

q

JA

L

8.3 °C/W
80 °C/W

260 °C

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2

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(I

= 30 mAdc, IB = 0)

C

MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G
MJD31C, NJVMJD31CG, NJVMJD31CRLG, NJVMJD31CT4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G

Collector Cutoff Current

= 40 Vdc, IB = 0)

(V

CE

MJD31, NJVMJD31T4G, MJD32

= 60 Vdc, IB = 0)

(V

CE

MJD31C, NJVMJD31CG, NJVMJD31CRLG, NJVMJD31CT4G,

, NJVMJD32T4G

MJD32C, NJVMJD32CG, NJVMJD32CT4G

Collector Cutoff Current

(V

CE

= Rated V

CEO

, VEB = 0)

Emitter Cutoff Current

= 5 Vdc, IC = 0)

(V

BE

ON CHARACTERISTICS (Note 1)

DC Current Gain

= 1 Adc, VCE = 4 Vdc)

(I

C

(IC = 3 Adc, VCE = 4 Vdc)

Symbol Min Max Unit

V

CEO(sus)

I

CEO

ICES

40

100

−

−

−

−

50

50

Vdc

mAdc

mAdc

− 20

I

EBO

h

FE

− 1

25
10

−

50

mAdc

Collector−Emitter Saturation Voltage

(IC = 3 Adc, IB = 375 mAdc)

Base−Emitter On Voltage

(IC = 3 Adc, VCE = 4 Vdc)

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2)

= 500 mAdc, VCE = 10 Vdc, f

(I

C

= 1 MHz)

test

Small−Signal Current Gain

= 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)

(I

C

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

2. f

= ⎪hfe⎪• f

T

test

.

V

CE(sat)

V

BE(on)

− 1.2

Vdc

Vdc

− 1.8

f

T

h

fe

3 −

20 −

MHz

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3

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

, POWER DISSIPATION (WATTS)

D

P

TAT

2.5

2

1.5

1

0.5

0

TYPICAL CHARACTERISTICS

C

25

20

+11 V

0

15

10

TA (SURFACE MOUNT)

T

C

tr, tf ≤ 10 ns

DUTY CYCLE = 1%

5

0

25

50 75 100 125 150

T, TEMPERATURE (°C)

25 ms

R

B

-9 V

51

-4 V

and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

R

B

MUST BE FAST RECOVERY TYPE, e.g.:

D

1

1N5825 USED ABOVE I
MSD6100 USED BELOW I

≈ 100 mA

B

≈ 100 mA

B

REVERSE ALL POLARITIES FOR PNP.

V

CC

+30 V

D

1

R

C

SCOPE

Figure 1. Power Derating

2

1

tr @ VCC = 30 V

0.7

0.5

0.3

t, TIME (s)μ

0.1

tr @ VCC = 10 V

0.07

0.05

0.03

0.02

0.03 0.07 0.3 30.1 0.7

0.05

I

, COLLECTOR CURRENT (AMPS)

C

Figure 3. Turn−On Time

1

0.7
D = 0.5

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.2

0.1

0.05

0.01

SINGLE PULSE

td @ V

BE(off)

0.5 1

= 2 V

IC/IB = 10

= 25°C

T

J

Figure 2. Switching Time Test Circuit

3
2

1

tf @ VCC = 30 V

0.7

0.5

0.3

0.2

t, TIME (s)μ

tf @ VCC = 10 V

0.1

0.07

0.05

0.03

0.03

0.05 0.07 0.1 0.2 0.5 0.7

I

C

Figure 4. Turn−Off Time

R

= r(t) R

q

JC(t)

R

q

JC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

J(pk)

q

JC

= 8.33°C/W MAX

- TC = P

1

(pk) qJC(t)

ts′

0.3

, COLLECTOR CURRENT (AMPS)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

IB1 = I

B2

IC/IB = 10
t

′ = ts - 1/8 t

s

f

TJ = 25°C

12

2

0.01

0.01

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500
t, TIME (ms)

Figure 5. Thermal Response

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4

1 k

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)

1000

150°C

100

10

, DC CURRENT GAIN

FE

h

1

0.01 0.1 1 10

25°C

−55°C

, COLLECTOR CURRENT (A)

I

C

Figure 6. DC Current Gain at VCE = 4 V

0.6
IC/IB = 10

0.5

0.4

0.3

VOLTAGE (V)

0.2

, COLL−EMITT SATURATION

0.1

CE(sat)

V

0

0.001 0.01 0.1 1 10

I

, COLLECTOR CURRENT (A)

C

25°C

150°C

Figure 8. Collector−Emitter Saturation Voltage

VCE = 4 V

−55°C

1000

150°C

100

10

, DC CURRENT GAIN

FE

h

1

0.01 0.1 1 10

25°C

I

−55°C

, COLLECTOR CURRENT (A)

C

VCE = 2 V

Figure 7. DC Current Gain at VCE = 2 V

1.2
IC/IB = 10

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

, BASE−EMITT SATURATION VOLTAGE (V)

0.2

0.001 0.01 0.1 1 10

BE(sat)

V

−55°C

25°C

150°C

IC, COLLECTOR CURRENT (A)

Figure 9. Base−Emitter Saturation Voltage

1.2
VCE = 5 V

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

, BASE−EMITTER ON VOLTAGE (V)

0.3

BE(on)

0.2

V

0.001 0.01 0.1 1 10

−55°C

25°C

150°C

IC, COLLECTOR CURRENT (A)

Figure 10. Base-Emitter “On” Voltage

2

1.6

1.2

0.8

0.4

, COLLECTOR−EMITTER VOLTAGE (V)

0

CE

V

0.01 0.1 1 10 100 1000

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5

100 mA 500 mA

IC = 3 A

1 A

10 mA

, BASE CURRENT (mA)

I

B

Figure 11. Collector Saturation Region

TA =

25°C

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)

1000

C

ib

100

C

ob

10

C, CAPACITANCE (pF)

1

0.1 1 10 100
, REVERSE VOLTAGE (V)

V

R

TA = 25°C

Figure 12. Capacitance

10

1

100

10

PRODUCT (MHz)

, CURRENT−GAIN − BANDWIDTH

T

f

1

0.001 0.01 0.1 1 10
, COLLECTOR CURRENT (A)

I

C

Figure 13. Current−Gain−Bandwidth Product

VCE = 5 V

= 25°C

T

A

0.1

, COLLECTOR CURRENT (A)

C

I

0.01
1 10 100

, COLLECTOR−EMITTER VOLTAGE (V)

V

CE

Figure 14. Safe Operating Area

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6

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

TYPICAL CHARACTERISTICS − MJD32, MJD32C (PNP)

1000

150°C

100

10

, DC CURRENT GAIN

FE

h

1

0.01 0.1 1 10

25°C

−55°C

I

, COLLECTOR CURRENT (A)

C

Figure 15. DC Current Gain at VCE = 4 V

1

IC/IB = 10

0.9

0.8

0.7

0.6

0.5

0.4

VOLTAGE (V)

0.3

, COLL−EMITT SATURATION

0.2

0.1

CE(sat)

V

0

0.001 0.01 0.1 1 10

IC, COLLECTOR CURRENT (A)

150°C

−55°C

Figure 17. Collector−Emitter Saturation

Voltage

1.2
VCE = 5 V

1.1

1.0

0.9

0.8

0.7

0.6

VOLTAGE (V)

, BASE−EMITTER ON

0.5

0.4

BE(on)

V

0.3

0.2

150°C

25°C

−55°C

0.001 0.01 0.1 1 10
I

, COLLECTOR CURRENT (A)

C

Figure 19. Base−Emitter “On” Voltage

VCE = 4 V

25°C

1000

150°C

100

10

, DC CURRENT GAIN

FE

h

1

0.01 0.1 1 10

I

C

25°C

−55°C

, COLLECTOR CURRENT (A)

Figure 16. DC Current Gain at VCE = 2 V

1.4
IC/IB = 10

1.2

1.0

0.8

, BASE−EMITTER

0.6

BE(sat)

V

0.4

SATURATION VOLTAGE (V)

0.2

0.001 0.01 0.1 1 10

−55°C

25°C

150°C

I

, COLLECTOR CURRENT (A)

C

Figure 18. Base−Emitter Saturation Voltage

2

500 mA

1.6

1.2

0.8

0.4

10 mA

, COLLECTOR−EMITTER VOLTAGE (V)

0

CE

V

0.01 0.1 1 10 100 1000

100 mA

, BASE CURRENT (mA)

I

B

IC = 3 A

1 A

Figure 20. Collector Saturation Region

VCE = 2 V

TA =

25°C

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7

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

TYPICAL CHARACTERISTICS

1000

C

100

10

C, CAPACITANCE (pF)

1

0.1 1 10 100

ib

C

ob

V

, REVERSE VOLTAGE (V)

R

TA = 25°C

Figure 21. Capacitance

10

1

100

10

PRODUCT (MHz)

, CURRENT−GAIN − BANDWIDTH

T

f

1

0.001 0.01 0.1 1 10

I

, COLLECTOR CURRENT (A)

C

VCE = 5 V
T

A

Figure 22. Current−Gain−Bandwidth Product

1 ms

1 s

= 25°C

0.1

, COLLECTOR CURRENT (A)

C

I

0.01
1 10 100

, COLLECTOR−EMITTER VOLTAGE (V)

V

CE

Figure 23. Safe Operating Area

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8

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

ORDERING INFORMATION

Device Package Type Package Shipping

MJD31CG DPAK

(Pb−Free)

NJVMJD31CG* DPAK

(Pb−Free)

MJD31C1G IPAK

(Pb−Free)

MJD31CRLG DPAK

(Pb−Free)

NJVMJD31CRLG* DPAK

(Pb−Free)

MJD31CT4G DPAK

(Pb−Free)

NJVMJD31CT4G* DPAK

(Pb−Free)

MJD31T4G DPAK

(Pb−Free)

NJVMJD31T4G* DPAK

(Pb−Free)

MJD32CG DPAK

(Pb−Free)

NJVMJD32CG* DPAK

(Pb−Free)

MJD32CRLG DPAK

(Pb−Free)

MJD32CT4G DPAK

(Pb−Free)

NJVMJD32CT4G* DPAK

(Pb−Free)

MJD32RLG DPAK

(Pb−Free)

MJD32T4G DPAK

(Pb−Free)

NJVMJD32T4G* DPAK

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP

Capable.

369C 75 Units / Rail

369C 75 Units / Rail

369D 75 Units / Rail

369C 1,800 / Tape & Reel

369C 1,800 / Tape & Reel

369C 2,500 / Tape & Reel

369C 2,500 / Tape & Reel

369C 2,500 / Tape & Reel

369C 2,500 / Tape & Reel

369C 75 Units / Rail

369C 75 Units / Rail

369C 1,800 / Tape & Reel

369C 2,500 / Tape & Reel

369C 2,500 / Tape & Reel

369C 1,800 / Tape & Reel

369C 2,500 / Tape & Reel

369C 2,500 / Tape & Reel

†

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9

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

PACKAGE DIMENSIONS

DPAK

CASE 369C

ISSUE D

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI­MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.

DIM MIN MAX MIN MAX

A 0.086 0.094 2.18 2.38

A1 0.000 0.005 0.00 0.13

b 0.025 0.035 0.63 0.89
b2 0.030 0.045 0.76 1.14
b3 0.180 0.215 4.57 5.46

c 0.018 0.024 0.46 0.61
c2 0.018 0.024 0.46 0.61

D 0.235 0.245 5.97 6.22

E 0.250 0.265 6.35 6.73

e 0.090 BSC 2.29 BSC

H 0.370 0.410 9.40 10.41

L 0.055 0.070 1.40 1.78
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
L3 0.035 0.050 0.89 1.27
L4 −−− 0.040 −−− 1.01

Z 0.155 −−− 3.93 −−−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

L3

L4

b2

e

E

b3

4

12 3

A

B

D

b

0.005 (0.13) C

DETAIL A

M

C

A

c2

H

c

GAUGE

L2

PLANE

L

L1

DETAIL A

ROTATED 90 CW5

SOLDERING FOOTPRINT*

6.20

0.244

2.58

0.101

A1

H

3.0

0.118

Z

SEATING

C

PLANE

5.80

0.228

1.6

0.063

SCALE 3:1

6.172

0.243

ǒ

inches

mm

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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10

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

PACKAGE DIMENSIONS

IPAK

CASE 369D

ISSUE C

V

S

−T−

SEATING
PLANE

F

B

R

4

123

G

A

K

3 PL

D

0.13 (0.005) T

C

E

J

H

M

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

Z

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
F 0.037 0.045 0.94 1.14

0.090 BSC 2.29 BSC

G
H 0.034 0.040 0.87 1.01

J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1.01
V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,

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reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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MJD31/D

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