Page 1
MJD31B/31C
MJD32B/32C
COMPLEMENTARY SILICON POWER TRANSISTORS
■ SGS-THOMSON PREFERRED SALESTYPES
■ SURFACE-MOUNTING TO-252 (DPAK)
POWERPACKAGEIN TAPE& REEL
(SUFFIX”T4”)
■ ELECTRICALSIMILARTO TIP31B/C AND
TIP32B/C
APPLICATIONS
■ GENERALPURPOSE SWITCHING AND
AMPLIFIERTRANSISTORS
DESCRIPTION
■ The MJD31Band MJD31Cand the MJD32B
and MJD32C form complementaryNPN-PNP
pairs. They are manufacturedusingEpitaxial
Base technologyfor cost-effective
performance.
ABSOLUTE MAXIMUM RATINGS
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
Symb o l Parameter Val u e Uni t
MJD31B/ 32 B MJD31C /3 2C
V
V
V
I
P
T
June 1997
Collect or- B as e Voltage (IE=0) 80 100 V
CBO
Collector-Emitter Voltage ( IB=0) 80 100 V
CEO
Emitter-Base Voltage (IC=0) 5 V
EBO
Collect or Current 3 A
I
C
Collect or Peak C urr ent 5 A
CM
Base Current 1 A
I
B
Tot al Diss ipa t ion at Tc=25oC15W
tot
Storage Temperature -65 to 150
stg
Max. Operat ing J unc t i on Tem per at u re 150
T
j
o
C
o
C
1/5
Page 2
MJD31B/31C- MJD32B/32C
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistance Junctio n-c as e Max
Ther mal Resistance Junctio n-am bien t Max
8.33
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
Ces
I
CEO
I
EBO
V
CEO(sus)
V
CE(sat)
Collector C ut -off
Current (v
bE
=0)
Collector C ut -off
Current (i
B
=0)
Emit ter Cut - o f f Current
=0)
(I
C
Collector-Emitter
Sust aining V olt ag e
∗ Collector-Emitter
= Ma x R ating 20 µA
V
CB
V
=60V 50 µA
CB
V
=5V 0.1 mA
EB
IC=30mA
for MJD31B/32B
for MJD31C/32C
80
100
IC=3A IB=375mA 1.2 V
Saturation Voltage
∗ Base-Emitt er V oltage IC=3A VCE=4V 1.8 V
V
BE(on)
h
∗ DC Current G ain IC=1A VCE=4V
FE
h
∗
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%
For PNP type voltage and currentvalues are negative.
Dynamic Current Gain IC=0.5A VCE=10V f=1KHz
fe
=3A VCE=4V
I
C
=0.5A VCE=10V f=1MHz203
I
C
25
10 50
v
V
Safe Operating Area DeratingCurves
2/5
Page 3
MJD31B/31C - MJD32B/32C
DCCurrent Gain (NPNtype)
Collector-Emitter Saturation Voltage (NPN type)
DC Current Gain (PNPtype)
Collector-EmitterSaturation Voltage (PNPtype)
Base-EmitterSaturation Voltage (NPNtype)
Collector-BaseCapacitance (PNP type)
3/5
Page 4
MJD31B/31C- MJD32B/32C
TO-252 (DPAK) MECHANICAL DATA
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039
4/5
H
A
E
C2
L2
B2
==
==
DETAIL”A”
D
2
13
L4
A1
C
A2
DETAIL”A”
B
G
==
0068772-B
Page 5
MJD31B/31C - MJD32B/32C
Informationfurnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsabilityfor the
consequencesof use of such informationnor for any infringementof patents or other rights of third parties which may results from its use. No
license is granted byimplicationor otherwise under anypatentor patentrights of SGS-THOMSONMicroelectronics. Specificationsmentioned
in this publicationare subject tochange without notice. This publicationsupersedes and replaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedfor use as criticalcomponentsinlifesupport devices or systems without express
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy- All Rights Reserved
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