Datasheet mjd31-c_mjd32-c Datasheet

MJD31, MJD31C (NPN),
MJD32, MJD32C (PNP)

Complementary Power
Transistors

DPAK For Surface Mount Applications

Designed for general purpose amplifier and low speed switching

applications.

Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves

• Straight Lead Version in Plastic Sleeves (“1” Suffix)

• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

• Electrically Similar to Popular TIP31 and TIP32 Series

• Epoxy Meets UL 94, V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

• These are Pb−Free Packages

MAXIMUM RATINGS

Rating Symbol Max Unit

Collector−Emitter Voltage

MJD31, MJD32

MJD31C, MJD32C

Collector−Base Voltage

MJD31, MJD32

MJD31C, MJD32C

Emitter−Base Voltage V

Collector Current − Continuous

− Peak

Base Current I

Total Power Dissipation @ TC = 25°C

Derate above 25°C

Total Power Dissipation @ TA = 25°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient*

Lead Temperature for Soldering Purposes T

*These ratings are applicable when surface mounted on the minimum pad sizes

recommended.

V

CEO

V

I

P

P

TJ, T

R

q

R

q

CB

EB

C

B

D

D

JC

JA

L

stg

40

100

40

100

5 Vdc

3
5

1 Adc

15

0.12WW/°C

1.56

0.012

−65 to
+ 150

8.3 °C/W
80 °C/W

260 °C

Vdc

Vdc

Adc

W/°C

W

°C

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SILICON

POWER TRANSISTORS

3 AMPERES

40 AND 100 VOLTS

15 WATTS

MARKING

DIAGRAMS

4

DPAK

2

1

3

1

2

3

CASE 369C

STYLE 1

4

DPAK−3

CASE 369D

STYLE 1

A = Site Code
Y = Year
WW = Work Week
xx = 1, 1C, 2, or 2C
G = Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.

AYWW

J3xxG

YWW

J3xxG

© Semiconductor Components Industries, LLC, 2011

February, 2011 − Rev. 8

1 Publication Order Number:

MJD31/D

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 30 mAdc, IB = 0) MJD31, MJD32

MJD31C, MJD32C

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0) MJD31, MJD32
(VCE = 60 Vdc, IB = 0) MJD31C, MJD32C

Collector Cutoff Current

(VCE = Rated V

CEO

, VEB = 0)

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1 Adc, VCE = 4 Vdc)
(IC = 3 Adc, VCE = 4 Vdc)

Collector−Emitter Saturation Voltage

(IC = 3 Adc, IB = 375 mAdc)

Symbol

V

CEO(sus)

I

CEO

ICES

I

EBO

h

FE

V

CE(sat)

Min

40

100

−

−

−

25
10

−

Max

−

−

50

20

1

−

50

1.2

Unit

Vdc

mAdc

mAdc

mAdc

−

Vdc

Base−Emitter On Voltage

(IC = 3 Adc, VCE = 4 Vdc)

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2)

(IC = 500 mAdc, VCE = 10 Vdc, f

= 1 MHz)

test

Small−Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

2. fT = ⎪hfe⎪• f

test

.

V

BE(on)

−

1.8

f

T

h

fe

20

3

−

−

Vdc

MHz

−

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2

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)

TAT

C

25

2.5

20

2

15

, POWER DISSIPATION (WATTS)

D

P

1.5

0.5

10

1

5

0

0

25

TA (SURFACE MOUNT)

T

C

50 75 100 125 150

T, TEMPERATURE (°C)

Figure 1. Power Derating

2

1

0.7

0.5

0.3

t, TIME (s)μ

0.1

0.07

0.05

0.03

0.02

0.03 0.07 0.3 30.1 0.7

tr @ VCC = 30 V

tr @ VCC = 10 V

0.05

IC, COLLECTOR CURRENT (AMPS)

td @ V

BE(off)

0.5 1

TYPICAL CHARACTERISTICS

+11 V

0

-9 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
REVERSE ALL POLARITIES FOR PNP.

Figure 2. Switching Time Test Circuit

t, TIME (s)μ

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

3
2

1

tf @ VCC = 30 V

0.03

0.05 0.07 0.1 0.2 0.5 0.7

IC/IB = 10
TJ = 25°C

= 2 V

25 ms

R

B

51

ts′

tf @ VCC = 10 V

0.3

IC, COLLECTOR CURRENT (AMPS)

-4 V

V

CC

+30 V

R

C

D

1

IB1 = I

B2

IC/IB = 10
ts′ = ts - 1/8 t
TJ = 25°C

12

SCOPE

f

1

0.7
D = 0.5

0.5

0.3

0.2

0.1

0.07

0.05

0.03
SINGLE PULSE

0.02

0.01

0.01

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

Figure 3. Turn−On Time

Figure 4. Turn−Off Time

0.2
P

0.1

0.05

0.01

R

= r(t) R

q

JC(t)

R

q

JC

q

JC

= 8.33°C/W MAX

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

- TC = P

J(pk)

1

(pk) qJC(t)

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500
t, TIME (ms)

Figure 5. Thermal Response

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3

1 k

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)

TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)

1000

150°C

100

10

, DC CURRENT GAIN

FE

h

1

0.01 0.1 1 10

25°C

−55°C

IC, COLLECTOR CURRENT (A)

Figure 6. DC Current Gain at VCE = 4 V

0.6
IC/IB = 10

0.5

0.4

0.3

VOLTAGE (V)

0.2

, COLL−EMITT SATURATION

0.1

CE(sat)

V

0

0.001 0.01 0.1 1 10

IC, COLLECTOR CURRENT (A)

25°C

150°C

Figure 8. Collector−Emitter Saturation Voltage

VCE = 4 V

−55°C

1000

150°C

100

10

, DC CURRENT GAIN

FE

h

1

0.01 0.1 1 10

25°C

−55°C

IC, COLLECTOR CURRENT (A)

VCE = 2 V

Figure 7. DC Current Gain at VCE = 2 V

1.2
IC/IB = 10

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

, BASE−EMITT SATURATION VOLTAGE (V)

0.2

0.001 0.01 0.1 1 10

BE(sat)

V

−55°C

25°C

150°C

IC, COLLECTOR CURRENT (A)

Figure 9. Base−Emitter Saturation Voltage

1.2
VCE = 5 V

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

, BASE−EMITTER ON VOLTAGE (V)

0.3

BE(on)

0.2

V

0.001 0.01 0.1 1 10

−55°C

25°C

150°C

IC, COLLECTOR CURRENT (A)

Figure 10. Base-Emitter “On” Voltage

2

1.6

1.2

0.8

0.4

, COLLECTOR−EMITTER VOLTAGE (V)

0

CE

V

0.01 0.1 1 10 100 1000

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4

TA =

25°C

100 mA 500 mA

IC = 3 A

1 A

10 mA

IB, BASE CURRENT (mA)

Figure 11. Collector Saturation Region

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)

TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)

1000

C

ib

100

C

ob

10

C, CAPACITANCE (pF)

1

0.1 1 10 100
VR, REVERSE VOLTAGE (V)

TA = 25°C

Figure 12. Capacitance

10

1

100

10

PRODUCT (MHz)

, CURRENT−GAIN − BANDWIDTH

T

f

1

0.001 0.01 0.1 1 10
, COLLECTOR CURRENT (A)

I

C

Figure 13. Current−Gain−Bandwidth Product

VCE = 5 V
T

= 25°C

A

0.1

, COLLECTOR CURRENT (A)

C

I

0.01
1 10 100

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 14. Safe Operating Area

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5

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)

TYPICAL CHARACTERISTICS − MJD32, MJD32C (PNP)

1000

150°C

100

10

, DC CURRENT GAIN

FE

h

1

0.01 0.1 1 10

25°C

−55°C

IC, COLLECTOR CURRENT (A)

Figure 15. DC Current Gain at VCE = 4 V

1

IC/IB = 10

0.9

0.8

0.7

0.6

0.5

0.4

VOLTAGE (V)

0.3

, COLL−EMITT SATURATION

0.2

0.1

CE(sat)

V

0

0.001 0.01 0.1 1 10

IC, COLLECTOR CURRENT (A)

150°C

−55°C

Figure 17. Collector−Emitter Saturation

Voltage

1.2
VCE = 5 V

1.1

1.0

0.9

0.8

0.7

0.6

VOLTAGE (V)

, BASE−EMITTER ON

0.5

0.4

BE(on)

V

0.3

0.2

150°C

25°C

−55°C

0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)

Figure 19. Base−Emitter “On” Voltage

VCE = 4 V

25°C

1000

150°C

100

10

, DC CURRENT GAIN

FE

h

1

0.01 0.1 1 10

IC, COLLECTOR CURRENT (A)

25°C

−55°C

Figure 16. DC Current Gain at VCE = 2 V

1.4
IC/IB = 10

1.2

1.0

0.8

, BASE−EMITTER

0.6

BE(sat)

V

0.4

SATURATION VOLTAGE (V)

0.2

0.001 0.01 0.1 1 10

−55°C

25°C

150°C

IC, COLLECTOR CURRENT (A)

Figure 18. Base−Emitter Saturation Voltage

2

500 mA

1.6

1.2

0.8

0.4

10 mA

, COLLECTOR−EMITTER VOLTAGE (V)

0

CE

V

0.01 0.1 1 10 100 1000

100 mA

IB, BASE CURRENT (mA)

IC = 3 A

1 A

Figure 20. Collector Saturation Region

VCE = 2 V

TA =

25°C

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MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)

TYPICAL CHARACTERISTICS

1000

C

100

10

C, CAPACITANCE (pF)

1

0.1 1 10 100

ib

C

ob

VR, REVERSE VOLTAGE (V)

TA = 25°C

Figure 21. Capacitance

10

1

100

10

PRODUCT (MHz)

, CURRENT−GAIN − BANDWIDTH

T

f

1

0.001 0.01 0.1 1 10

IC, COLLECTOR CURRENT (A)

VCE = 5 V
TA = 25°C

Figure 22. Current−Gain−Bandwidth Product

1 ms

1 s

0.1

, COLLECTOR CURRENT (A)

C

I

0.01
1 10 100

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 23. Safe Operating Area

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MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)

ORDERING INFORMATION

Device Package Type Package Shipping

MJD31CG DPAK

(Pb−Free)

MJD31C1G DPAK−3

(Pb−Free)

MJD31CRLG DPAK

(Pb−Free)

MJD31CT4G DPAK

(Pb−Free)

MJD31T4G DPAK

(Pb−Free)

MJD32CG DPAK

(Pb−Free)

MJD32CRLG DPAK

(Pb−Free)

MJD32CT4 DPAK 369C 2500 Tape & Reel

MJD32CT4G DPAK

(Pb−Free)

MJD32RLG DPAK

(Pb−Free)

MJD32T4G DPAK

(Pb−Free)

369C 75 Units / Rail

369D 75 Units / Rail

369C 1800 Tape & Reel

369C 2500 Tape & Reel

369C 2500 Tape & Reel

369C 75 Units / Rail

369C 1800 Tape & Reel

369C 2500 Tape & Reel

369C 1800 Tape & Reel

369C 2500 Tape & Reel

†

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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8

L3

L4

b2

e

E

b3

4

12 3

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)

PACKAGE DIMENSIONS

DPAK

CASE 369C−01

ISSUE D

Z

SEATING
PLANE

NOTES:

A

B

D

b

0.005 (0.13) C

DETAIL A

M

C

A

c2

H

c

GAUGE

L2

PLANE

L

L1

DETAIL A

ROTATED 90 CW5

SOLDERING FOOTPRINT*

6.20

0.244

2.58

0.101

H

C

A1

3.0

0.118

1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI­MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.

DIM MIN MAX MIN MAX

A 0.086 0.094 2.18 2.38

A1 0.000 0.005 0.00 0.13

b 0.025 0.035 0.63 0.89
b2 0.030 0.045 0.76 1.14
b3 0.180 0.215 4.57 5.46

c 0.018 0.024 0.46 0.61
c2 0.018 0.024 0.46 0.61

D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73

e 0.090 BSC 2.29 BSC

H 0.370 0.410 9.40 10.41

L 0.055 0.070 1.40 1.78
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
L3 0.035 0.050 0.89 1.27
L4 −−− 0.040 −−− 1.01

Z 0.155 −−− 3.93 −−−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

5.80

0.228

1.6

0.063

SCALE 3:1

6.172

0.243

ǒ

inches

mm

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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9

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)

PACKAGE DIMENSIONS

IPAK

CASE 369D−01

ISSUE C

V

S

−T−

SEATING
PLANE

F

B

R

4

123

G

A

K

D 3 PL

0.13 (0.005) T

C

E

J

H

M

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

Z

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
F 0.037 0.045 0.94 1.14

0.090 BSC 2.29 BSC

G

H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1.01
V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
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MJD31/D

10