Page 1
MJD31/31C
General Purpose Amplifier
Low Speed Switching Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP31 and TIP31C
NPN Epitaxial Silicon Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
MJD31/31C
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
PC
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage
: MJD31
: MJD31C
40
100
Collector-Emitter Voltage
: MJDH31
: MJD31C
40
100
Emitter-Base Voltage 5 V
Collector Current (DC) 3 A
Collector Current (Pulse) 1 A
Base Current 1 A
Collector Dissipation (TC=25°C) 15 W
Collector Dissipation (T
=25°C) 1.56 W
a
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
(sus) * Collector-Emitter Sustaining Voltage
V
CEO
: MJD31
: MJD31C
I
CEO
Collector Cut-off Current
: MJD31
: MJD31C
I
CES
Collector Cut-off Current
: MJD31
: MJD31C
I
EBO
hFE
V
(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 375mA 1.2 V
CE
(on) * Base-Emitter ON Voltage V
V
BE
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
= 30mA, IB = 0 40
I
C
100
V
= 40V, IB = 0
CE
= 60V, IB = 0
V
CE
= 40V, V
V
CE
V
= 100V, V
CE
= 5V, IC = 0 1 mA
BE
= 4V, IC = 1A
CE
= 4V, IC = 3A
V
CE
= 4A, IC = 3A 1.8 V
CE
= 10V, IC = 500mA 3 MHz
CE
BE
BE
= 0
= 0
25
10 50
50
50
20
20
V
V
V
V
V
V
µA
µA
µA
µA
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
Page 2
Typical Characteristics
MJD31/31C
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Volta ge
[pF], CAPACITANCE
ob
C
1000
100
10
VCE = 2V
VCE(sat)
IC = 10 I
B
10
1
VBE(sat)
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
1E-3 0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
tC = 10.I
B
1
tR, VCC=30V
[µs], TURN ON TIME
D
, t
0.1
R
t
tR, VCC=10V
tD, VBE(off)=2V
1
0.1 1 10 100
VCB[V], COLLECTOR BASE VOLTAGE
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 3. Collector Capacitance Figure 4. Turn On Time
100
µ
500
s
µ
s
1ms
DC
31
31C
t
1
s], TURN OFF TIME
µ
[
STG
0.1
,t
F
t
0.01 0.1 1 10
STG
tF, VCC=30V
tF, VCC(off)=10V
IC[A], COLLECTOR CURRENT
tC = 10.I
B
10
ICP(max)
IC(max)
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time Figure 6. Safe Operating
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
Page 3
MJD31/31C
Typical Characteristics
20
15
10
5
[W], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 7. Power Derating
(Continued)
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
Page 4
Package Demensions
6.60 ±0.20
5.34 ±0.30
D-PAK
(4.34)(0.50) (0.50)
0.70 ±0.20
MJD31/31C
2.30 ±0.10
0.50 ±0.10
0.60 ±0.20
0.80 ±0.20
MAX0.96
2.30TYP
[2.30±0.20]
2.70 ±0.20
0.76 ±0.10
2.30TYP
[2.30±0.20]
9.50 ±0.30
6.10 ±0.20
6.10 ±0.20
9.50 ±0.30
2.70 ±0.20
±0.10
0.91
0.89 ±0.10
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(2XR0.25)
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
(0.70)
0.76 ±0.10
MIN0.55
(0.90)
(0.10) (3.05)
(1.00)
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
CEx™
A
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
2
E
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
®
UltraFET
VCX™
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This dat asheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation Rev. H3
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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