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MJD2955
General Purpose Amplifier
Low Speed Switching Applications
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ -I “ Suffix)
• Electrically Similar to Popular MJE2955T
• DC Current Gain Specified to 10A
• High Current Gain - Bandwidth Product:
= 2MHz (MIN), IC = -500mA
f
T
PNP Epitaxial Silicon Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
MJD2955
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage - 70 V
Collector-Emitter Voltage - 60 V
Emitter-Base Voltage - 5 V
Collector Current - 10 A
Base Current - 6 A
Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (T
=25°C) 1.75 W
a
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage IC = - 30mA, IB = 0 -60 V
CEO
I
CEO
I
CBO
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC = - 4A, IB = - 0.4A
V
CE
(on) * Base-Emitter ON Voltage V
V
BE
f
T
* Pulse Test: PW≤300ms, Duty Cycle≤2%
Collector Cut-off Current V
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
= - 30V, IE = 0 - 50 µA
CE
= - 70V, IE = 0 - 2 mA
CB
= - 5V, IC = 0 - 0.5 mA
EB
= - 4V, IC = - 4A
CE
V
= - 4V, IC = -10A
CE
20
5
100
- 1.1
= - 10A, IB = - 3.3A
I
C
= - 4V, IC = - 4A -1.8 V
CE
= - 10V, IC = - 500mA 2 MHz
CE
- 8
V
V
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
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Typical Characteristics
MJD2955
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
t
R
t
D
VBE(off)=5V
s], TURN ON TIME
µ
[
D
,t
R
t
10
1
0.1
VCE=-2V
VCC=-30V
=10I
I
C
B
IB1=I
B2
VBE(sat)
VCE(sat)
IC=10I
B
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat),V
BE
-0.01
V
-0.1 -1 -10 -100
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
10
1
0.1
[µs], TURN OFF TIME
STG
,t
F
t
VCC=-30V
=10I
I
C
B
IB1=I
B2
t
STG
t
F
0.01
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
0.01
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 3. Turn On Time Figure 4. Turn Off Time
-100
-10
-1
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-0.1 -1 -10 -100
1ms
5ms
DC
VCE[V], COLLECTOR EMITTER VOLTAGE
500
100
µ
25
µ
s
s
20
15
10
5
[W], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
Page 3
Package Demensions
6.60 ±0.20
5.34 ±0.30
D-PAK
(4.34)(0.50) (0.50)
0.70 ±0.20
M
JD2955
2.30 ±0.10
0.50 ±0.10
0.60 ±0.20
0.80 ±0.20
MAX0.96
2.30TYP
[2.30±0.20]
2.70 ±0.20
0.76 ±0.10
2.30TYP
[2.30±0.20]
9.50 ±0.30
6.10 ±0.20
6.10 ±0.20
9.50 ±0.30
2.70 ±0.20
±0.10
0.91
0.89 ±0.10
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(2XR0.25)
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
(0.70)
0.76 ±0.10
MIN0.55
(1.00)
(0.90)
(0.10) (3.05)
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
Page 4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
CEx™
A
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
2
E
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
®
UltraFET
VCX™
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Defini tion
Advance Information Formative or In
Design
Preliminary First Production This dat asheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation Rev. H3
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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