The MJD122 and MJD127 form complementary
NPN - PNP pair. They are manufactured using
Epit axia l B ase tec hnology f or c os t-ef f ect ive
performance.
3
1
TO-251
IPAK
(Suffix ”-1”)
3
2
1
TO-252
DPAK
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
Typ. = 150 Ω
R1Typ. = 10 KΩ
R
2
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
NPNMJD122
PNPMJD127
V
CBO
V
CEO
V
EBO
I
I
CM
I
P
T
stg
T
For PNP types voltage and current values are negative.
Collector-Base Voltage (IE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage (IC=0)
Collector Current5A
C
Collector Peak Current (tp< 5 ms)
Base Current0.1A
B
TotalDissipation at Tc=25°C
tot
Storage Temperature–65 to 150°C
Max. Operating Junction Temperature150°C
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use ofsuch information nor for anyinfringement of patents orother rights ofthird parties which mayresult from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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