Datasheet MJD122 Datasheet (SGS Thomson Microelectronics)

MJD122



COMPLEMENTARY SILICON POWER

■ STMicroelectronics PREFERRED

SALESTYPES

■ LOW BASE-DRIVEREQUIREMENTS

■ INTEGRATED ANTIPARALLEL

COLLECTOR- EMITTER DIODE

■ SURFACE-MOUNTING TO-252 (DPAK)

POWERPACKAGEIN TAPE& REEL
(SUFFIX”T4”)

■ ELECTRICALSIMILARTO TIP122AND

TIP127

APPLICATIONS

■ GENERALPURPOSESWITCHING AND

AMPLIFIER.

DESCRIPTION

The MJD122 and MJD127 form complementary
NPN - PNP pairs.

They are manufactured using Epitaxial Base
technologyfor cost-effectiveperformance.

MJD127

DARLINGTON TRANSISTORS

3

1

DPAK

TO-252

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

R1Typ. = 10 KΩ R2Typ. =150 Ω

ABSOLUTE MAXIMUM RATINGS

Symb ol Para meter Value Uni t

NPN MJD122
PNP MJD127

V
V
V

I

P
T

For PNP types voltage and current values are negative.

January 1999

Collector-Base Voltage (IE=0) 100 V

CBO

Collector-Emitter Voltage (IB=0) 100 V

CEO

Emitter-Base Voltage (IC=0) 5 V

EBO

Collector Current 5 A

I

C

Collector Pea k C urr ent 8 A

CM

Base Current 100 mA

I

B
tot Total Dissipation at T

Stor age T em per a t ur e -65 to 150

stg

Max. Operati ng Junct i on Tem perature 150

T

j

case

≤ 25 oC

20 W

o

C

o

C

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MJD122 MJD127

THERMAL DATA

R

thj-case

R

thj-amb

Ther mal Resist ance Junction-ca s e M ax
Ther mal Resist ance Junction-am bient Max

6.25
100

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwisespecified)

case

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

I

CBO

I

CEO

I

CEX

I

EBO

V

CEO(sus)

Collec t or Cut-off
Current (I

E

=0)

Collec t or Cut-off
Current (I

B

=0)

Collec t or Cut-off
Current

Emitter Cut-off
Current (I

C

=0)

Collec t or -Emitter

V

=100V 10 µA

CB

V

=50V 10 µA

CE

VCE=100V VBE=-1.5V
V

=100V VBE=-1.5V TC=125oC

CE

V

=5V 2 mA

EB

10

500

IC= 30 mA 100 V

Sust aining Voltage

∗ Collec t or -Emitter

V

CE(sat)

Saturation Voltage

V

∗ Base-Emi tter

BE(sat)

IC=4A IB=16mA

=8A IB=80mA

I

C

IC=8A IB=80mA 4.5 V

2
4

Saturation Voltage

∗ Base-Emi tter Volta ge IC=4A VCE=4V 2.8 V

V

BE(on)

h

∗ DC Curr ent Gain IC=4A VCE=4V

FE

∗

Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%

For PNP typevoltage and currentvalues are negative.

=8A VCE=4V

I

C

1000

100

12000

µA
µA

V
V

Safe OperatingArea DeratingCurve

2/6

MJD122 MJD127

DCCurrent Gain (NPNtype)

CollectorEmitter SaturationVoltage (NPN type)

DC Current Gain(PNP type)

Collector EmitterSaturation Voltage(PNP type)

Base EmitterSaturationVoltage (NPN type)

BaseEmitter Saturation Voltage(PNP type)

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MJD122 MJD127

Base EmitterOn Voltage (NPNtype)

FreewheelDiode ForwardVoltage (NPN type)

BaseEmitter On Voltage (PNP type)

FreewheelDiode Forward Voltage(PNP type)

SwitchingTime Resistive Load (NPN type) SwitchingTime resistive Load (PNPtype)

4/6

TO-252 (DPAK) MECHANICALDATA

MJD122 MJD127

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397

L2 0.8 0.031
L4 0.6 1 0.023 0.039

H

A

E

C2

L2

B2

==

==

DETAIL”A”

D

2

13

L4

A1

C

A2

DETAIL”A”

B

G

==

0068772-B

5/6

MJD122 MJD127

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice.This publication supersedes and replaces allinformation previously supplied. STMicroelectronics products
are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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