Datasheet MJD122, MJD122T4, MJD122-1, MJD127, MJD127-1 Datasheet (Fairchild Semiconductor)

Î

ON Semiconductor

Complementary Darlington Power Transistors

DPAK For Surface Mount Applications

NPN

MJD122

PNP

MJD127

*

Designed for general purpose amplifier and low speed switching

applications.

• Lead Formed for Surface Mount Applications in Plastic Sleeves

(No Suffix)

• Straight Lead Version in Plastic Sleeves (“–1” Suffix)

• Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix)

• Surface Mount Replacements for 2N6040–2N6045 Series,

TIP120–TIP122 Series, and TIP125–TIP127 Series

• Monolithic Construction With Built–in Base–Emitter Shunt Resistors

• High DC Current Gain —

= 2500 (Typ) @ IC = 4.0 Adc

h

FE

• Complementary Pairs Simplifies Designs

MAXIMUM RATINGS

MJD122

Rating

Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous

ООООООООООО

Peak Base Current Total Power Dissipation @ TC = 25C

Derate above 25C

ООООООООООО

Total Power Dissipation* @ TA = 25C

Derate above 25C

Operating and Storage Junction

ООООООООООО

Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient*

Symbol

V

CEO

V

CB

V

EB

I

C

ÎÎ

I

B

P

D

ÎÎ

P

D

TJ, T

stg

ÎÎ

Symbol

R

θ

JC

R

θ

JA

MJD127

100 100

5 8

ÎÎÎÎ

16

120

20

0.16

ÎÎÎÎ

1.75

0.014

–65 to +150

ÎÎÎÎ

Max

6.25

71.4

Unit

Vdc Vdc Vdc Adc

Î

mAdc Watts

W/C

Î

Watts W/C

C

Î

Unit

C/W C/W

*ON Semiconductor Preferred Device

SILICON

POWER TRANSISTORS

8 AMPERES

100 VOLTS

20 WATTS

CASE 369A–13

CASE 369–07

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

0.190

4.826

0.165

4.191

2.54

0.100

3.0

0.118

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2001

1 Publication Order Number:

November, 2001 – Rev. 5

0.243

6.172

0.063

1.6

inches

mm

MJD122/D

MJD122 MJD127

Î

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25C unless otherwise noted)

C

Symbol

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

ООООООООООООООООО

(I

= 30 mAdc, IB = 0)

C

Collector Cutoff Current

ООООООООООООООООО

= 50 Vdc, IB = 0)

(V

CE

Collector Cutoff Current

(V

= 100 Vdc, IE = 0)

CB

ООООООООООООООООО

Emitter Cutoff Current

(V

= 5 Vdc, IC = 0)

BE

V

CEO(sus)

ÎÎÎ

I

CEO

ÎÎÎ

I

CBO

ÎÎÎ

I

EBO

ON CHARACTERISTICS

DC Current Gain

ООООООООООООООООО

(I

= 4 Adc, VCE = 4 Vdc)

C

= 8 Adc, VCE = 4 Vdc)

(I

ООООООООООООООООО

C

Collector–Emitter Saturation Voltage

(I

= 4 Adc, IB = 16 mAdc)

C

ООООООООООООООООО

= 8 Adc, IB = 80 mAdc)

(I

C

Base–Emitter Saturation Voltage (1)

ООООООООООООООООО

(I

= 8 Adc, IB = 80 mAdc)

C

Base–Emitter On Voltage

ООООООООООООООООО

(I

= 4 Adc, VCE = 4 Vdc)

C

h

FE

ÎÎÎ

V

CE(sat)

ÎÎÎ

V

BE(sat)

ÎÎÎ

V

BE(on)

ÎÎÎ

DYNAMIC CHARACTERISTICS

Current–Gain–Bandwidth Product

(I

= 3 Adc, VCE = 4 Vdc, f = 1 MHz)

C

ООООООООООООООООО

Output Capacitance

(V

= 10 Vdc, IE = 0, f = 0.1 MHz) MJD127

CB

ООООООООООООООООО

MJD122

Small–Signal Current Gain

(I

= 3 Adc, VCE = 4 Vdc, f = 1 kHz)

ООООООООООООООООО

C

|hfe|

ÎÎÎ

C

ob

ÎÎÎ

h

fe

ÎÎÎ

(1) Pulse Test: Pulse Width  300 µs, Duty Cycle  2%. *These ratings are applicable when surface mounted on the minimum pad sizes recommended.

Min

100

ÎÎ

—

ÎÎ

—

ÎÎ

—

ÎÎ

1000

ÎÎ

100

—

ÎÎ

— —

ÎÎ

—

ÎÎ

4

ÎÎ

—

ÎÎ

—

300

ÎÎ

Max

—

ÎÎÎ

10

ÎÎÎ

10

ÎÎÎ

2

ÎÎÎ

12,000

ÎÎÎ

—

2

ÎÎÎ

4

4.5

ÎÎÎ

2.8

ÎÎÎ

—

ÎÎÎ

300

ÎÎÎ

200

—

ÎÎÎ

Unit

Vdc

ÎÎ

µAdc

ÎÎ

µAdc

ÎÎ

mAdc

—

ÎÎ

Vdc

ÎÎ

Vdc

ÎÎ

Vdc

ÎÎ

MHz

ÎÎ

pF

ÎÎ

—

ÎÎ

TAT

2.5

1.5

0.5

, POWER DISSIPATION (WATTS)

D

P

C

25

20

2

T

15

10

1

C

TA

SURFACE

MOUNT

5

0

25

50 75 100 125 150

T, TEMPERATURE (°C)

Figure 1. Power Derating

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2

MJD122 MJD127

0

TYPICAL ELECTRICAL CHARACTERISTICS

PNP MJD127 NPN MJD122

20,000

10,000

7000 5000

T

= 150°C

J

3000

2000

25°C

1000

, DC CURRENT GAIN

FE

700

h

500

-55°C

300 200

0.1 0.7

0.3 7 10

0.2

3

2.6 IC = 2 A

2.2

0.5 1

23 5

IC, COLLECTOR CURRENT (AMP)

4 A

6 A

20,000

VCE = 4 V

10,000

5000

3000 2000

1000

, DC CURRENT GAIN

FE

h

500

300 200

Figure 2. DC Current Gain

T

= 25°C

J

2.6

2.2

T

= 150°C

J

25°C

-55°C

0.2

0.1 0.7

0.3 7 10

0.5 1

IC, COLLECTOR CURRENT (AMP)

3

IC = 2 A

4 A

23 5

6 A

VCE = 4 V

T

= 25°C

J

1.8

1.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

1

V

0.3 0.5 1 735

0.7

2

, BASE CURRENT (mA)

I

B

3

T

= 25°C

J

2.5

2

1.5

VBE @ VCE = 4 V

V, VOLTAGE (VOLTS)

V

@ IC/IB = 250

BE(sat)

1

V

@ IC/IB = 250

0.5

0.2 30.1 0.70.3 1 5

CE(sat)

0.5 7210

, COLLECTOR CURRENT (AMP)

I

C

1.8

1.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

1

V

10 20 30

0.3 0.5 1 7352

0.7

Figure 3. Collector Saturation Region

3

2.5

2

V

@ IC/IB = 250

BE(sat)

1.5

V, VOLTAGE (VOLTS)

1

0.5

VBE @ VCE = 4 V

V

@ IC/IB = 250

CE(sat)

0.2 30.1 0.70.3 1 5

Figure 4. “On” Voltages

, BASE CURRENT (mA)

I

B

T

= 25°C

J

0.5 721

IC, COLLECTOR CURRENT (AMP)

10 20 30

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3

MJD122 MJD127

TYPICAL ELECTRICAL CHARACTERISTICS

+5

+4

+3

+2

+1

0

-1

-2

-3

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

-4

V

-5

5

10

4

10

3

10

PNP MJD127

*IC/I

≤ h

B

θ

for V

VC

θ

for V

VB

0.1

0.2

REVERSE

VCE = 30 V

FE/3

25°C to 150°C

CE(sat)

-55°C to 25°C

25°C to 150°C

BE

0.50.3 75

123 10

IC, COLLECTOR CURRENT (AMP)

FORWARD

NPN MJD122

+5

*IC/I

+4

≤ h

B

+3

+2

+1

0

-1

-2

-55°C to 25°C

-3

θ

for V

VB

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

-4

V

-5

BE

0.20.1 1 2 30.50.3 75

Figure 5. Temperature Coefficients

5

10

REVERSE

4

10

3

10

VCE = 30 V

FE/3

-55°C to 25°C

*θ

for V

VC

CE(sat)

25°C to 150°C

0.7 10

, COLLECTOR CURRENT (AMP)

I

C

FORWARD

25°C to 150°C

-55°C to 25°C

2

10

T

= 150°C

J

1

10

, COLLECTOR CURRENT (A)µI

C

10

-1

10

+0.6 +0.2 -0.8 -1 -1.2 -1.4

100°C

0

25°C

0+0.4

-0.2 -0.4 -0.6

VBE, BASE-EMITTER VOLTAGE (VOLTS)

Figure 6. Collector Cut–Off Region

10,000

5000 3000

2000

1000

, SMALL-SIGNAL CURRENT GAIN

fe

h

500 300

200

100

50 30

20

10

1

210

T

= 25°C

C

V

= 4 Vdc

CE

= 3 Adc

I

C

PNP NPN

55020 100

f, FREQUENCY (kHz)

200 500 1000

2

10

, COLLECTOR CURRENT (A)µI

C

10

T

= 150°C

J

1

0

100°C

-1

25°C

0-0.4 +0.2 +0.4 +0.6-0.6 -0.2 +0.8 +1 +1.2 +1.4

VBE, BASE-EMITTER VOLTAGE (VOLTS)

300

200

C

ob

100

70

C, CAPACITANCE (pF)

50

PNP

C

ib

NPN

30

0.1 2 10 50

1 5 20 100

0.50.2

VR, REVERSE VOLTAGE (VOLTS)

T

= 25°C

J

Figure 7. Small–Signal Current Gain

Figure 8. Capacitance

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4

MJD122 MJD127

R

& RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

B

D

, MUST BE FAST RECOVERY TYPE, e.g.:

1

1N5825 USED ABOVE I MSD6100 USED BELOW I

V

2

APPROX

≈ 100 mA

B

≈ 100 mA

B

R

B

+8 V

D

51

0

V

1

APPROX

-12 V

, t

≤ 10 ns

t

r

f

DUTY CYCLE = 1%

25 µs

FOR t AND V

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.

1

+ 4 V

AND tr, D1 IS DISCONNECTED

d

= 0

2

Figure 9. Switching Times Test Circuit Figure 10. Switching Times

1

0.7

D = 0.5

0.5

0.3

0.2

0.1

0.07

0.05

0.03

r(t), EFFECTIVE TRANSIENT

0.02

THERMAL RESISTANCE (NORMALIZED)

0.01

0.2

0.1

0.05

0.01

SINGLE PULSE

0.01

0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500

≈ 8 k

TUT

V

CC

-30 V

R

C

SCOPE

≈ 120

t, TIME OR PULSE WIDTH (ms)

5

t

s

3 2

1

0.7

0.5

t, TIME (s)µ

0.3

0.2 VCC = 30 V

I

= 250

C/IB

R

θ

JC(t)

R

θ

JC

0.1

0.07

0.05

= r(t) R

= 6.25°C/W

= I

I

B1

B2

T

= 25°C

J

0.1 0.5 30.3

0.2

θ

JC

, COLLECTOR CURRENT (AMP)

I

C

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

- TC = P

J(pk)

1

(pk) θJC(t)

PNP NPN

td @ V

BE(off)

0.7 1

P

(pk)

DUTY CYCLE, D = t1/t

t

f

= 0 V

t

1

t

r

10752

t

2

1000

20 15 10

5 3

2

1

0.5

0.3

0.2

0.1

, COLLECTOR CURRENT (AMP)

C

I

0.05

0.03

0.02

500µ

s

T

= 150°C

J

1ms

5ms

BONDING WIRE LIMIT THERMAL LIMIT T

= 25°C (SINGLE PULSE)

C

SECOND BREAKDOWN LIMIT

CURVES APPLY BELOW RATED V

5

321

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

V

CE

CEO

10 507

Figure 12. Maximum Forward Bias

Safe Operating rea

Figure 11. Thermal Response

100µ

s

a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

variable depending on conditions. Second breakdown pulse

dc

limits are valid for duty cycles to 10% provided T < 150C. T Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than

3020 70

100

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the limitations imposed by second breakdown.

5

There are two limitations on the power handling ability of

– V

C

CE

The data of Figure 12 is based on T

may be calculated from the data in

J(pk)

= 150C; TC is

J(pk)

MJD122 MJD127

PNP

BASE

COLLECTOR

≈ 8 k ≈ 120

EMITTER

Figure 13. Darlington Schematic

NPN

BASE

COLLECTOR

≈ 8 k ≈ 120

EMITTER

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6

MJD122 MJD127

PACKAGE DIMENSIONS

DP AK

CASE 369A–13

ISSUE AA

NOTES:

SEATING

–T–

PLANE

B

V

S

R

4

A

123

K

F

L

D

2 PL

G

0.13 (0.005) T

C

E

Z

U

J

H

M

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.250 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.033 0.040 0.84 1.01 F 0.037 0.047 0.94 1.19 G 0.180 BSC 4.58 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSC R 0.175 0.215 4.45 5.46 S 0.020 0.050 0.51 1.27 U 0.020 --- 0.51 --- V 0.030 0.050 0.77 1.27 Z 0.138 --- 3.51 ---

MILLIMETERSINCHES

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7

MJD122 MJD127

PACKAGE DIMENSIONS

DPAK

CASE 369–07

ISSUE M

–T–

SEATING PLANE

B

V

R

4

A

123

S

K

F

3 PL

D

G

0.13 (0.005) T

M

C

E

J

H

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.250 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.033 0.040 0.84 1.01 F 0.037 0.047 0.94 1.19

0.090 BSC 2.29 BSC

G H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.175 0.215 4.45 5.46 S 0.050 0.090 1.27 2.28 V 0.030 0.050 0.77 1.27

MILLIMETERSINCHES

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

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MJD122/D

8

Datasheet MJD122, MJD122T4, MJD122-1, MJD127, MJD127-1 Datasheet (Fairchild Semiconductor)

Specifications and Main Features

Frequently Asked Questions

User Manual