Datasheet MJD112T4, MJD112RL, MJD112-1 Datasheet (MOTOROLA)

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Page 1

Motorola Bipolar Power Transistor Device Data

   

DPAK For Surface Mount Applications

Designed for general purpose power and switching such as output or driver stages

in applications such as switching regulators, converters, and power amplifiers.

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves (“1” Suffix)

• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

• Surface Mount Replacements for TIP110–TIP117 Series

• Monolithic Construction With Built–in Base–Emitter Shunt Resistors

• High DC Current Gain — hFE = 2500 (Typ) @ IC = 2.0 Adc

• Complementary Pairs Simplifies Designs

MAXIMUM RATINGS

Rating

Symbol

MJD112 MJD117

Unit

Collector–Emitter Voltage

CEO

100

Vdc

Collector–Base Voltage

100

Vdc

Emitter–Base Voltage

Vdc

Collector Current — Continuous

Peak

2 4

Adc

Base Current

mAdc

Total Power Dissipation @ TC = 25_C

Derate above 25_C

0.16

Watts W/_C

Total Power Dissipation* @ TA = 25_C

Derate above 25_C

1.75

0.014

Watts W/_C

Operating and Storage Junction

Temperature Range

TJ, T

stg

–65 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

θJC

6.25

C/W

Thermal Resistance, Junction to Ambient*

θJA

71.4

C/W

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

CEO(sus)

100

—

Vdc

Collector Cutoff Current

(VCE = 50 Vdc, IB = 0)

CEO

—

µAdc

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

CBO

—

µAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

EBO

—

mAdc

*These ratings are applicable when surface mounted on the minimum pad sizes recommended. (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%. (continued)

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJD112/D

 Motorola, Inc. 1995

 

CASE 369A–13

SILICON

POWER TRANSISTORS

2 AMPERES

100 VOLTS

20 WATTS

*Motorola Preferred Device

CASE 369–07

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

0.243

6.172

0.063

1.6

0.118

3.0

0.07

1.8

0.165

4.191

0.190

4.826

inches

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Motorola Bipolar Power Transistor Device Data

*ELECTRICAL CHARACTERISTICS — continued (T

= 25_C unless otherwise noted)

Characteristic

ÎÎÎÎ

Symbol

Min

Max

ÎÎÎ

Unit

OFF CHARACTERISTICS – continued

Collector–Cutoff Current

(VCE = 80 Vdc, V

BE(off)

= 1.5 Vdc)

(VCE = 80 Vdc, V

BE(off)

= 1.5 Vdc, TC = 125_C)

ÎÎÎÎ

CEX

— —

500

ÎÎÎ

µAdc

Collector–Cutoff Current (VCB = 80 Vdc, IE = 0)

ÎÎÎÎ

CBO

—

ÎÎÎ

µAdc

Emitter–Cutoff Current (VBE = 5 Vdc, IC = 0)

ÎÎÎÎ

EBO

—

ÎÎÎ

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 0.5 Adc, VCE = 3 Vdc) (IC = 2 Adc, VCE = 3 Vdc) (IC = 4 Adc, VCE = 3 Vdc)

ÎÎÎÎ

500

1000

200

—

12,000

—

ÎÎÎ

—

Collector–Emitter Saturation Voltage

(IC = 2 Adc, IB = 8 mAdc) (IC = 4 Adc, IB = 40 mAdc)

ÎÎÎÎ

CE(sat)

— —

2 3

ÎÎÎ

Vdc

Base–Emitter Saturation Voltage (IC = 4 Adc, IB = 40 mAdc)

ÎÎÎÎ

BE(sat)

—

ÎÎÎ

Vdc

Base–Emitter On Voltage (IC = 2 Adc, VCE = 3 Vdc)

ÎÎÎÎ

BE(on)

—

2.8

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz)

ÎÎÎÎ

—

ÎÎÎ

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD117

MJD112

ÎÎÎÎ

— —

200 100

ÎÎÎ

*Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%.

0.04 0.2 40.1

0.06

0.6 1

IC, COLLECTOR CURRENT (AMP)

VCC = 30 V IC/IB = 250

t, TIME ( s)

0.8

0.6

0.4

0.2

Figure 1. Switching Times Test Circuit Figure 2. Switching Times

APPROX

+8 V

≈

8 k

SCOPE

–30 V

FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.

tr, tf

≤

10 ns

DUTY CYCLE = 1%

+ 4 V

td @ V

BE(off)

= 0 V

PNP NPN

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

APPROX

–12 V

TUT

≈

0.4 2

IB1 = I

TJ = 25

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

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Motorola Bipolar Power Transistor Device Data

Figure 3. Thermal Response

t, TIME OR PULSE WIDTH (ms)

0.01 1000

0.3

0.2

0.07

r(t), EFFECTIVE TRANSIENT

JC(t)

= r(t) R

= 6.25

C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t

J(pk)

– TC = P

(pk)

JC(t)

(pk)

DUTY CYCLE, D = t1/t

0.01

THERMAL RESISTANCE (NORMALIZED)

0.7

0.5

0.1

0.05

0.03

0.02

0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500

0.2

SINGLE PULSE

D = 0.5

0.05

0.1

0.01

, COLLECTOR CURRENT (AMP)

Figure 4. Maximum Rated Forward Biased

Safe Operating Area

Figure 5. Power Derating

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.3

100

5 2

0.5

0.2

BONDING WIRE LIMITED THERMAL LIMIT SECOND BREAKDOWN LIMIT

5 203

TJ = 150°C CURVES APPLY BELOW RATED V

CEO

100µs

1 ms

0.1

107 30

T, TEMPERATURE (

50 75 100 125 150

, POWER DISSIPATION (WATTS)

2.5

1.5

0.5

TAT

SURFACE

MOUNT

0.7

5 ms

50 70 200

500µs

ACTIVE–REGION SAFE–OPERATING AREA

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figures 5 and 6 is based on T

J(pk)

= 150_C; T

is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T

J(pk)

< 150_C. T

J(pk)

may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

C, CAPACITANCE (pF)

VR, REVERSE VOLTAGE (VOLTS)

0.04

1 4 10 40

TC = 25°C

200

100

0.1 2 6 20

PNP NPN

0.60.40.20.06

Figure 6. Capacitance

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Motorola Bipolar Power Transistor Device Data

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMP)

NPN MJD112 PNP MJD117

Figure 7. DC Current Gain

Figure 8. Collector Saturation Region

Figure 9. “On Voltages

0.04 IC, COLLECTOR CURRENT (AMP)

300

0.06 0.2

2 k

800

4 k

, DC CURRENT GAIN

VCE = 3 V

TJ = 125°C

3 k

0.1 0.6

25°C

–55°C

1 k

0.4 1

6 k

400

600

2 4 0.04

300

0.06 0.2

2 k

800

4 k

, DC CURRENT GAIN

3 k

0.1 0.6

25°C

–55°C

1 k

0.4 1

6 k

400

600

2 4

3.4

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.6

0.1 0.2 0.5 102 5

IC =

0.5 A 1 A

0.04 IC, COLLECTOR CURRENT (AMP)

1.4

V, VOLTAGE (VOLTS)

2.2

1.8

0.6

0.2

TJ = 25°C

BE(sat)

@ IC/IB = 250

VBE @ VCE = 3 V

CE(sat)

@ IC/IB = 250

0.06 0.2 20.1 0.60.4 1 4 0.04 IC, COLLECTOR CURRENT (AMP)

1.4

V, VOLTAGE (VOLTS)

2.2

1.8

0.6

0.2

TJ = 25°C

BE(sat)

@ IC/IB = 250

CE(sat)

@ IC/IB = 250

0.06 0.2 20.1 0.60.4 1 4

20 50 100

3.4

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.6

0.1 0.2 0.5 102 51

20 50 100

VBE @ VCE = 3 V

TC = 125°C

VCE = 3 V

4 A

TJ = 125°C

2 A

TJ = 125°C

IC =

0.5 A

1 A 4 A2 A

TYPICAL ELECTRICAL CHARACTERISTICS

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Motorola Bipolar Power Transistor Device Data

NPN MJD112 PNP MJD117

0.04 IC, COLLECTOR CURRENT (AMP)

0.06 0.2

*APPLIED FOR IC/IB < hFE/3

0.1 0.6

–55°C TO 25°C

0.4 1

–4.8

2 4

VBE, BASE–EMITTER VOLTAGE (VOLTS)

–1

0–0.4

, COLLECTOR CURRENT ( A)

+0.2 +0.4 +0.6

TJ = 150°C

100°C

REVERSE FORWARD

25°C

VCE = 30 V

–0.6 – 0.2 +0.8 + 1 +1.2 +1.4

VBE, BASE–EMITTER VOLTAGE (VOLTS)

–1

0+0.4

, COLLECTOR CURRENT ( A)

–0.2 –0.4 – 0.6

+0.6 + 0.2 –0.8 –1 –1.2 –1.4

+0.8

–4

–3.2

–2.4

–1.6

–0.8

FOR V

25°C TO 150°C

FOR V

CE(sat)

0.04 IC, COLLECTOR CURRENT (AMP)

0.06 0.20.1 0.60.4 1 2 4

Figure 10. Temperature Coefficients

Figure 11. Collector Cut–Off Region

Figure 12. Darlington Schematic

BASE

EMITTER

COLLECTOR

≈

8 k≈ 120

PNP

BASE

EMITTER

COLLECTOR

≈

8 k≈ 120

NPN

–4.8

+0.8

–4

–3.2

–2.4

–1.6

–0.8

, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

–55°C TO 25°C

*APPLIES FOR IC/IB < hFE/3

FOR V

CE(sat)

FOR V

25°C TO 150°C

–55°C TO 25°C

25°C TO 150°C

–55°C TO 25°C

VCE = 30 V

REVERSE FORWARD

TJ = 150°C

100°C

25°C

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Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 369A–13

ISSUE W

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

1 2 3

–T–

SEATING PLANE

3 PL

0.13 (0.005) T

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.235 0.250 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.033 0.040 0.84 1.01 F 0.037 0.047 0.94 1.19 G

0.090 BSC 2.29 BSC

H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.175 0.215 4.45 5.46 S 0.050 0.090 1.27 2.28 V 0.030 0.050 0.77 1.27

CASE 369–07

ISSUE K

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

2 PL

0.13 (0.005) T

–T–

SEATING PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.235 0.250 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.033 0.040 0.84 1.01 F 0.037 0.047 0.94 1.19 G 0.180 BSC 4.58 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSC R 0.175 0.215 4.45 5.46 S 0.020 0.050 0.51 1.27 U 0.020 ––– 0.51 ––– V 0.030 0.050 0.77 1.27 Z 0.138 ––– 3.51 –––

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

1 2 3

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MJD112/D

*MJD112/D*

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Datasheet MJD112T4, MJD112RL, MJD112-1 Datasheet (MOTOROLA)

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