COMSET
SEMICONDUCTORS
MJ900/901/1000/1001
COMPLEMENTARY POWER
TO-3
DARLINGTONS
The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas
transistors in monolithic Darlington configuration, and are mounted in
JEDEC TO-3 metal case. They are intended for use in power linear and
switching applications.
PNP types are the MJ900 and MJ901, and their complementary NPN
types are the MJ1000 and MJ1001 respectively.
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
V
CBO
MJ900
MJ1000
Collector-Base Voltage
MJ901
MJ1001
60
80
Vdc
MJ900
MJ1000
V
CEO
V
EBO
I
C
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
=0
I
B
I
C(RMS)
Page 1 of 4
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
60
Vdc
80
5.0 Vdc
8.0
Adc
COMSET
SEMICONDUCTORS
MJ900/901/1000/1001
I
B
Base Current
MJ900
MJ1000
MJ901
MJ1001
0.1
Adc
P
T
T
J
T
S
Power Dissipation
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
@ TC < 25°
Derate above
25°C
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
90 Watts
0.515 W/°C
-65 to +200 °C
Symbol Ratings Value Unit
MJ900
R
thJ-C
Thermal Resistance, Junction to Case
Page 2 of 4
MJ1000
MJ901
MJ1001
1.94 °C/W
COMSET
SEMICONDUCTORS
MJ900/901/1000/1001
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings
V
CEO
I
CEO
I
EBO
I
CER
V
CE(SAT)
Collector-Emitter
Breakdown Voltage (*)
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Leakage
Current
Collector-Emitter saturation
Voltage (*)
Test Condition(s)
IC=100 mAdc, IB=0
VCE=30 Vdc, IB=0
VCE=40 Vdc, IB=0
VBE=5.0 Vdc, IC=0
VCB=60 V, RBE=1.0 k ohm
VCB=80 V, RBE=1.0 k ohm
VCB=60 V, RBE=1.0 k ohm,
=150°C
T
C
VCB=80 V, RBE=1.0 k ohm,
=150°C
T
C
IC=3.0 A, IB=12 mAdc
IC=8.0 A, IB=40 mAdc
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
Min Typ Mx Unit
60 - -
Vdc
80 - -
-500
µAdc
--
--2.0mAdc
--
1.0
--
mAdc
--
5.0
--
--2.0
Vdc
--4.0
MJ900
V
F
V
BE
Forward Voltage (pulse
method)
Base-Emitter Voltage (*)
IF=3 A
IC=3.0 Adc, VCE=3.0Vdc
Page 3 of 4
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
1.8
-
--2.5V
-V
COMSET
SEMICONDUCTORS
MJ900/901/1000/1001
VCE=3.0 Vdc, IC=3.0 Adc
h
fe
! ! ! For PNP types current and voltage values are negative ! ! !
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
DC Current Gain (*)
VCE=4.0 Vdc, IC=3.0 Adc
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
1000
750
--
-
--
MECHANICAL DATA
DIMENSIONS
mm
A 25,51
B 38,93
C 30,12
D 17,25
E 10,89
G 11,62
H8,54
L1,55
M 19,47
N1
P4,06
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