Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor MJ6308
DESCRIPTION
·700V Collector-Base Breakdown Capability
·Excellent Dynamic Saturation Characteristics
·Fast swithing
·Low Saturation Voltage
·Advanced Technology Replacement for the 2N6308
APPLICATIONS
·Designed in circuits requiring good dynamio saturation
characteristics in swithing power supply applications and
other inductive swithing circuits.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
=25℃)
a
V
V
V
P
T
CBO
CES
EBO
I
C
I
B
T
stg
Collector-Base Voltage 700 V
Collector-Emitter Sustaining Voltage 380 V
Emitter-Base Voltage 10 V
Collector Current-Continuous 8 A
B Base Current-Continuous 4 A
Collector Power Dissipation@TC=25℃ 140 W
C
Junction Temperature 200 ℃
J
Storage Temperature Range -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 1.25
℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor MJ6308
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
I
CES
I
EBO
h
FE
C
(sat)
ob
Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 380 V
Emitter-Collector Breakdown Voltage IE= 1.0mA; IC= 0 10 V
Collector-Emitter Saturation Voltage IC=3A; IB= 0.4A 1 V
Collector-Emitter Saturation Voltage IC= 6A; IB= 1A B 1 V
Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V
V
=700V; VBE=0V
Collector Cutoff Current
Emitter Cutoff current VEB=10V; IC= 0 10 μA
DC Current Gain IC= 8A; VCE=5V 5 20
Output Capacitance VCE=10V; IE= 0; f
CE
=700V; VBE=0V, Tc=100℃
V
CE
=1.0KHz 100 pF
test
0.1
1.5
mA
isc Website：www.iscsemi.cn
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