Page 1
MJ4030 – MJ4031 – MJ4032 PNP
MJ4033 – MJ4034 – MJ4035 NPN
DARLINGTON MEDIUM POWER COMPLEMENTARY
SILICON TRANSISTORS
For use as output devices in complementary general purpose amplifier
applications.
•
High DC current Gain – h
•
Monolithic Construction with Built-in Base Emitter Shunt Resistor
The complementary PNP types are the MJ4033/34/35
ABSOLUTE MAXIMUM RATINGS
=3500 (Typ) @ IC=10 Adc
FE
Symbol Ratings Value Unit
V
V
V
CBO
CEO
EBO
Collector-Base Voltage IE=0
Collector-EmitterVoltage IB=0
Emitter-Base Voltage IC=0
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
60
80
100
60
80
100
5.0 V
V
V
COMSET SEMICONDUCTORS 1/5
Page 2
MJ4030 – MJ4031 – MJ4032 PNP
MJ4033 – MJ4034 – MJ4035 NPN
I
I
P
T
C
B
T
J Ts
Collector Current
Base Current
Power Dissipation @ TC < 25°
Junction
Storage Temperature
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
16
0.5
150 Watts
200
-65 to +200
A
A
°C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
MJ4030
MJ4033
R
thJ-C
Thermal Resistance, Junction to Case
MJ4031
MJ4034
MJ4032
MJ4035
1.17 °C/W
COMSET SEMICONDUCTORS 2/5
Page 3
MJ4030 – MJ4031 – MJ4032 PNP
MJ4033 – MJ4034 – MJ4035 NPN
ELECT RICAL CHARACTE RISTI CS
TC=25°C unless otherwise noted
Symbol Ratings
V
CEO
I
CEO
V
(BR)CEO
Collector-Emitter Voltage (*)
Collector Cutoff Current
Collector-Emitter
Breakdown Voltage (*)
Test Condition(s)
IC=100 mAdc, IB=0
VCE=30 Vdc, IB=0
VCE=40 Vdc, IB=0
VCE=50 Vdc, IB=0
IB=0 Vdc, IC=100
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
Min Typ Mx Unit
60 - -
80 - -
100
--
--
--
60 - -
80 - -
3.0 mA
V
V
I
EBO
Emitter Cutoff Current
COMSET SEMICONDUCTORS 3/5
VBE=5.0 V, IC=0
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
100 - -
--5.0mA
Page 4
MJ4030 – MJ4031 – MJ4032 PNP
MJ4033 – MJ4034 – MJ4035 NPN
I
CER
V
CE(SAT)
V
BE
h
fe
Collector-Emitter Leakage
Current
Collector-Emitter saturation
Voltage (*)
Base-Emitter Voltage (*)
DC Current Gain (*)
VCB=60 V, RBE=1.0 k ohm
VCB=80 V, RBE=1.0 k ohm
VCB=100 V, RBE=1.0 k ohm
VCB=60 V, RBE=1.0 k ohm,
TC=150°C
VCB=80 V, RBE=1.0 k ohm,
=150°C
T
C
VCB=100 V, RBE=1.0 k ohm,
=150°C
T
C
IC=10 A, IB=40 mAdc
IC=16 A, IB=80 mAdc
IC=10 Adc, VCE=3.0Vdc
VCE=10 Vdc, IC=3.0 Adc
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
--
--
1.0
mAdc
--
--
5.0
--2.5
Vdc
--4.0
--3V
1000
-- -
! ! ! For PNP types current and voltage values are negative ! ! !
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
COMSET SEMICONDUCTORS 4/5
Page 5
MJ4030 – MJ4031 – MJ4032 PNP
MJ4033 – MJ4034 – MJ4035 NPN
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm inches
A 25,51 1,004
B 38,93 1,53
C 30,12 1,18
D 17,25 0,68
E 10,89 0,43
G 11,62 0,46
H 8,54 0,34
L 1,55 0,6
M 19,47 0,77
N 1 0,04
P 4,06 0,16
Pin 1 : Base
Pin 2 : Collector
Case : Emitter
COMSET SEMICONDUCTORS 5/5
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