Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor MJ3773
DESCRIPTION
·Low Collector-Emitter Saturation Voltage Vce(sat)=0.8V(Max)@Ic=10A
·Low Leakage Icbo=1mA(max)@140V
·High Current-Gain-Bandwidth Product-
f
=1MHz(min)@Ic=1A
T
APPLICATIONS
·Designed for power amplifier and switching applications.
·For ultimate circuit performance based on the design
requirements.
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CBO
EBO
I
C
I
B
T
stg
Collector-Base Voltage 160 V
Collector-Base Voltage 60 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 16 A
B Base Current-Continuous 4 A
Collector Power Dissipation@TC=25℃ 200 W
C
Junction Temperature 200 ℃
J
Storage Temperature Range -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 0.875
isc Website：www.iscsemi.cn
℃/W
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor MJ3773
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
V
CEO(SUS)
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
I
CEX
I
CBO
I
CEO
I
EBO
h
FE-1
(on)
Collector-Emitter Sustaining Voltage IC=0.2A; IB= 0 140 V
Collector-Emitter Saturation Voltage IC=8A; IB=0.8A 0.8 V
Collector-Emitter Saturation Voltage IC= 16A; IB=3.2A 2 V
Base-Emitter On Voltage IC=8A; VCE=4V 1.5 V
V
=140V; V
Collector Cutoff Current
Collector Cutoff Current VCE=140V; IE= 0 1 mA
Collector Cutoff current VCE=120V; IC= 0 2 mA
Emitter Cutoff current VEB=7V; IC= 0 1 mA
DC Current Gain IC=8A; VCE=4V 15 60
CE
VCE=140V; V
=1.5V
BE(off)
=1.5V, Tc=150℃
BE(off)
1
mA
5
h
FE-2
f
T
DC Current Gain IC=16A; VCE=4V 5
Current-Gain-Bandwidth Product IC=1A; VCE=10V; f
isc Website：www.iscsemi.cn
=1MHz 1 MHz
test
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