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COMPLEMENTARY SILICON POWER DARLINGTON
■ SGS-THOMS O N PREF ERRE D SA LES TYP E S
DESCRIPTION
The MJ2501 is a silicon epitaxial-base PNP
power transistors in monolithic Darlington
configuration and are mounted in Jedec TO-3
metal case. They are intented for use in power
linear and switching applications.
The complementary NPN type is the MJ3001.
MJ2501
MJ3001
TRANSIST ORS
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 KΩ R2 Typ. = 150 Ω
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
PNP MJ2501
NPN MJ3001
V
V
V
P
T
For PNP types voltage and current values are negative.
Collector-base Voltage (IE = 0) 80 V
CBO
Collector-emitter Voltage (IB = 0) 80 V
CEO
Emitter-base Voltage (IC = 0) 5 V
EBO
Collector Current 10 A
I
C
Base Current 0.2 A
I
B
Total Dissipation at Tc ≤ 25 oC 150 W
tot
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
o
C
o
C
June 1997
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MJ2501 / MJ3001
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.17
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (R
= 1 KΩ)
BE
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 80 V
V
CE
T
= 150 oC
case
V
= 80 V
CE
= 30 V
V
CE
V
= 40 V
CE
= 5 V
V
EB
I
= 100 mA 80 V
C
1
5
1
1
2mA
Sustaining Voltage
(I
= 0)
B
∗ Collector-emitter
V
CE(sat)
Saturation Voltage
V
∗ Base-emitter Voltage IC = 5 A VCE = 3 V 3 V
BE
h
∗ DC Current Gain IC = 5 A VCE = 3 V 1000
FE
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
IC = 5 A IB = 20 mA
I
= 10 A IB = 50 mA
C
2
4
mA
mA
mA
mA
V
V
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TO-3 MECHANICAL DATA
MJ2501 / MJ3001
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 0.97 1.15 0.038 0.045
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
mm inch
P
A
G
U
V
N
O
B
D
C
E
R
P003F
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MJ2501 / MJ3001
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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