Page 1
MJ2500 - MJ2501 PNP
MJ3000 - MJ3001 NPN
SILICON EPITAXIAL-BASE DARLINGTON
The MJ2500, and MJ2501 are silicon epitaxial-base NPN power transistors in
monolithic Darlington configuration and are mounted in Jedec TO-3 metal case.
They are intented for use in power linear and switching applications.
The complementary PNP types are the MJ3000 and MJ3001 respectively.
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
V
V
V
I
C
CBO
CEO
EBO
Collector-Base Voltage IE=0
Collector-EmitterVoltage IB=0
Emitter-Base Voltage IC=0
Collector Current
MJ2500
MJ3000
MJ2501
MJ3001
MJ2500
MJ3000
MJ2501
MJ3001
MJ2500
MJ3000
MJ2501
MJ3001
MJ2500
MJ3000
MJ2501
MJ3001
60
80
60
80
5.0 Vdc
10
Vdc
Vdc
Adc
COMSET SEMICONDUCTORS 1/4
Page 2
MJ2500 - MJ2501 PNP
MJ3000 - MJ3001 NPN
Symbol Ratings Value Unit
MJ2500
I
P
T
B
T
J Ts
Base Current
Power Dissipation
Junction
Storage Temperature
@ T
< 25°
C
MJ3000
MJ2501
MJ3001
MJ2500
MJ3000
MJ2501
MJ3001
MJ2500
MJ3000
MJ2501
MJ3001
0.2
150 Watts
200
-65 to +200
Adc
°C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
MJ2500
R
thJ-C
Thermal Resistance, Junction to Case
MJ3000
MJ2501
MJ3001
1.17 °C/W
ELECT RICAL CHARACTE RISTI CS
TC=25°C unless otherwise noted
Symbol Ratings
BV
CEO
Collector-Emitter
Breakdown Voltage (*)
IC=100 mAdc, IB=0
Test Condition(s)
MJ2500
MJ3000
MJ2501
MJ3001
Min Typ Mx Unit
60 - -
80 - -
Vdc
COMSET SEMICONDUCTORS 2/4
Page 3
MJ2500 - MJ2501 PNP
MJ3000 - MJ3001 NPN
Symbol Ratings
I
CEO
I
EBO
I
CER
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Leakage
Current
Test Condition(s)
VCE=30 Vdc, IB=0
VCE=40 Vdc, IB=0
VBE=5.0 Vdc, IC=0
VCB=60 V, RBE=1.0 k ohm
VCB=80 V, RBE=1.0 k ohm
VCB=60 V, RBE=1.0 k ohm,
=150°C
T
C
MJ2500
MJ3000
MJ2501
MJ3001
MJ2500
MJ2501
MJ3000
MJ3001
MJ2500
MJ3000
MJ2501
MJ3001
MJ2500
MJ3000
Min Typ Mx Unit
--
1.0 mAdc
--
--2.0mAdc
--
1.0
-mAdc
--
VCB=80 V, RBE=1.0 k ohm,
=150°C
T
C
IC=5.0 A, IB=20 mAdc
Collector-Emitter saturation
V
CE(SAT)
V
BE
h
fe
Voltage (*)
Base-Emitter Voltage (*)
DC Current Gain (*)
IC=10 A, IB=50 mAdc
IC=5.0 Adc, VCE=3.0Vdc
VCE=3.0 Vdc, IC=5.0 Adc
For PNP types current and voltage values are negative
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
MJ2501
MJ3001
MJ2500
MJ3000
MJ2501
MJ3001
MJ2500
MJ3000
MJ2501
MJ3001
MJ2500
MJ3000
MJ2501
MJ3001
MJ2500
MJ3000
MJ2501
MJ3001
5.0
--
--2.0
Vdc
--4.0
--3V
-
1000
-
-
-
-
COMSET SEMICONDUCTORS 3/4
Page 4
MJ2500 - MJ2501 PNP
MJ3000 - MJ3001 NPN
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm inches
A 25,51 1,004
B 38,93 1,53
C 30,12 1,18
D 17,25 0,68
E 10,89 0,43
G 11,62 0,46
H 8,54 0,34
L 1,55 0,6
M 19,47 0,77
N 1 0,04
P 4,06 0,16
Pin 1 : Base
Pin 2 : Collector
Case : Emitter
COMSET SEMICONDUCTORS 4/4
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