Datasheet MJ21193, MJ21193G, MJ21194, MJ21194G Datasheet (ON Semiconductor)

Page 1

MJ21193, MJ21194

Preferred Device

Silicon Power Transistors

The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.

Features

• Total Harmonic Distortion Characterized

• High DC Current Gain − h

= 25 Min @ IC = 8 Adc

• Excellent Gain Linearity

• High SOA: 2.5 A, 80 V, 1 Second

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

Collector−Base Voltage V

Emitter−Base Voltage V

Collector−Emitter Voltage − 1.5 V V

Collector Current − Continuous

Peak (Note 1)

Base Current − Continuous I

Total Power Dissipation @ TC = 25°C Derate Above 25°C

Operating and Storage Junction Temperature Range

CEO

CBO

EBO

CEX

TJ, T

stg

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤10%. (continued)

250 Vdc

400 Vdc

5 Vdc

400 Vdc

16 30

5 Adc

250

1.43

− 65 to +200

0.7 °C/W

Adc

W/°C

°C

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16 AMP COMPLEMENTARY

SILICON POWER

TRANSISTORS

250 VOLTS, 250 WATTS

MARKING DIAGRAM

MJ2119xG

TO−204AA (TO−3)

CASE 1−07

STYLE 1

MJ2119x = Device Code

x = 3 or 4 G=Pb−Free Package A = Assembly Location YY = Year WW = Work Week MEX = Country of Origin

ORDERING INFORMATION

Device Package Shipping

MJ21193 TO−3 100 Units / Tray

MJ21193G TO−3

(Pb−Free)

MJ21194 TO−3 100 Units / Tray

MJ21194G TO−3

(Pb−Free)

AYYWW

MEX

†

100 Units / Tray

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

April, 2009 − Rev. 5

1 Publication Order Number:

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Preferred devices are recommended choices for future use and best overall value.

MJ21193/D

Page 2

MJ21193, MJ21194

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

= 100 mAdc, IB = 0)

Collector Cutoff Current

= 200 Vdc, IB = 0)

Emitter Cutoff Current

= 5 Vdc, IC = 0)

Collector Cutoff Current

= 250 Vdc, V

BE(off)

= 1.5 Vdc)

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

= 50 Vdc, t = 1 s (non−repetitive)

= 80 Vdc, t = 1 s (non−repetitive)

ON CHARACTERISTICS

DC Current Gain

= 8 Adc, VCE = 5 Vdc)

= 16 Adc, IB = 5 Adc)

Base−Emitter On Voltage

= 8 Adc, VCE = 5 Vdc)

Collector−Emitter Saturation Voltage

= 8 Adc, IB = 0.8 Adc)

= 16 Adc, IB = 3.2 Adc)

DYNAMIC CHARACTERISTICS

Total Harmonic Distortion at the Output

= 28.3 V, f = 1 kHz, P

RMS

LOAD

= 100 W

RMShFE

unmatched

(Matched pair hFE = 50 @ 5 A/5 V) hFE

matched

Current Gain Bandwidth Product

= 1 Adc, VCE = 10 Vdc, f

= 1 MHz)

test

Output Capacitance

= 10 Vdc, IE = 0, f

= 1 MHz)

test

NOTE: Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%

Symbol Min Typ Max Unit

CEO(sus)

CEO

EBO

CEX

S/b

BE(on)

CE(sat)

250 − − Vdc

− − 100

− 100

mAdc

Adc

2.5

−

− − 2.2 Vdc

Vdc

−

0.8

0.08

1.4 4

−

4 − − MHz

− − 500 pF

PNP MJ21193

6.5

VCE = 10 V

6.0

5.5 5 V

5.0

4.5

4.0

TJ = 25°C

3.5

= 1 MHz

test

3.0

f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

0.1 1.0 10 I

COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain

Bandwidth Product

f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

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NPN MJ21194

8.0

7.0

6.0

10 V

5.0

4.0

VCE = 5 V

3.0

2.0

TJ = 25°C

1.0 f

= 1 MHz

test

0.1 1.0 10 IC COLLECTOR CURRENT (AMPS)

Figure 2. Typical Current Gain

Bandwidth Product

Page 3

1000

MJ21193, MJ21194

TYPICAL CHARACTERISTICS

PNP MJ21193 NPN MJ21194

1000

, DC CURRENT GAIN

1000

, DC CURRENT GAIN

100

TJ = 100°C

25°C

-25°C

VCE = 20 V

TJ = 100°C

25°C

-25°C

IC COLLECTOR CURRENT (AMPS)

100

, DC CURRENT GAIN

VCE = 20 V

100101.00.1

COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V

VCE = 5 V

PNP MJ21193

TJ = 100°C

25°C

-25°C

1000

100

, DC CURRENT GAIN

VCE = 20 V

NPN MJ21194

TJ = 100°C

25°C

-25°C

100101.00.1

, COLLECTOR CURRENT (A)

COLLECTOR CURRENT (AMPS)

Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V

PNP MJ21193

1.5 A

5.0

5.0010152025

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 7. Typical Output Characteristics

IB = 2 A

1 A

0.5 A

100101.00.1

TJ = 25°C

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IC COLLECTOR CURRENT (AMPS)

100101.00.1

NPN MJ21194

IB = 2 A

1.5 A

1 A

0.5 A

TJ = 25°C

, COLLECTOR CURRENT (A)

5.0

5.0010152025

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 8. Typical Output Characteristics

Page 4

3.0

2.5

2.0

TJ = 25°C

IC/IB = 10

MJ21193, MJ21194

TYPICAL CHARACTERISTICS

PNP MJ21193 NPN MJ21194

1.4

1.2

TJ = 25°C

1.0

0.8

IC/IB = 10

BE(sat)

SATURATION VOLTAGE (VOLTS)

, BASE-EMITTER VOLTAGE (VOLTS)

BE(on)

1.5

1.0

0.5

1.0

0.1

BE(sat)

CE(sat)

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Typical Saturation Voltages

PNP MJ21193 NPN MJ21194

TJ = 25°C

VCE = 20 V (SOLID)

IC, COLLECTOR CURRENT (AMPS)

VCE = 5 V (DASHED)

0.6

0.4

SATURATION VOLTAGE (VOLTS)

0.2

100101.00.1

IC, COLLECTOR CURRENT (AMPS)

CE(sat)

100101.00.1

Figure 10. Typical Saturation Voltages

TJ = 25°C

VCE = 20 V (SOLID)

1.0

, BASE-EMITTER VOLTAGE (VOLTS)

BE(on)

100101.00.1

0.1

IC, COLLECTOR CURRENT (AMPS)

VCE = 5 V (DASHED)

100101.00.1

100

, COLLECTOR CURRENT (AMPS)

Figure 11. Typical Base−Emitter Voltage

TC = 25°C

1.0

0.1

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1 SEC

100101.0 1000

Figure 13. Active Region Safe Operating Area

There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate I its of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 13 is based on T able depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.

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Figure 12. Typical Base−Emitter Voltage

− VCE lim-

= 200°C; TC is vari-

J(pk)

Page 5

MJ21193, MJ21194

10000

1000

C, CAPACITANCE (pF)

100

10000

TJ = 25°C TJ = 25°C

= 1 MHz f

(test)

VR, REVERSE VOLTAGE (VOLTS)

Figure 14. MJ21193 Typical Capacitance

100101.00.1

1000

C, CAPACITANCE (pF)

100

(test)

= 1 MHz

Figure 15. MJ21194 Typical Capacitance

1.2

1.1

1.0

0.9

VR, REVERSE VOLTAGE (VOLTS)

100101.00.1

0.8

, TOTAL HARMONIC

DISTORTION (%)

0.7

0.6

AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC

DISTORTION

ANALYZER

FREQUENCY (Hz)

Figure 16. Typical Total Harmonic Distortion

+50 V

SOURCE

AMPLIFIER

50 W

DUT

0.5 W

DUT

10000010000100010010

8.0 W

-50 V

Figure 17. Total Harmonic Distortion Test Circuit

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Page 6

MJ21193, MJ21194

PACKAGE DIMENSIONS

TO−204AA (TO−3)

CASE 1−07

ISSUE Z

2 PL

0.13 (0.005) Y

−T−

−Y−

SEATING PLANE

−Q−

0.13 (0.005) T

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

A 1.550 REF 39.37 REF B --- 1.050 --- 26.67 C 0.250 0.335 6.35 8.51 D 0.038 0.043 0.97 1.09 E 0.055 0.070 1.40 1.77 G 0.430 BSC 10.92 BSC H 0.215 BSC 5.46 BSC K 0.440 0.480 11.18 12.19 L 0.665 BSC 16.89 BSC N --- 0.830 --- 21.08 Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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MJ21193/D