Datasheet MJW16018, MJ16018 Datasheet (Motorola)

1

Motorola Bipolar Power Transistor Device Data

  

   

1.5 kV SWITCHMODE Series

These transistors are designed for high–voltage, high–speed, power switching in
inductive circuits where fall time is critical. T hey a re particularly s uited f or
line–operated switchmode applications.
Typical Applications: Features:

• Switching Regulators • Collector–Emitter Voltage — V

CEV

= 1500 Vdc

• Inverters • Fast Turn–Off Times

• Solenoids 80 ns Inductive Fall Time — 100_C (Typ)

• Relay Drivers 110 ns Inductive Crossover Time — 100_C (Typ)

• Motor Controls 4.5 µs Inductive Storage Time — 100_C (Typ)

• Deflection Circuits • 100_C Performance Specified for:

Reverse–Biased SOA with Inductive Load
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

MAXIMUM RATINGS

Rating

Symbol

MJ16018

MJW16018

Unit

Collector–Emitter Voltage

V

CEO(sus)

800

Vdc

Collector–Emitter Voltage

V

CEV

1500

Vdc

Emitter–Base Voltage

V

EB

6

Vdc

Collector Current — Continuous

— Peak

(1)

I

C

I

CM

10
15

Adc

Base Current — Continuous

— Peak

(1)

I

B

I

BM

8

12

Adc

Total Power Dissipation

@ TC = 25_C
@ TC = 100_C
Derate above TC = 25_C

P

D

175
100

1

125

50

1

Watts

W/_C

Operating and Storage Junction

Temperature Range

TJ, T

stg

–65 to 200

–55 to 150

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

1

1

_

C/W

Lead Temperature for Soldering

Purposes: 1/8″ from Case for
5 Seconds

T

L

275

_

C

(1) Pulse Test: Pulse Width = 5 µs, Duty Cycle v 10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ16018/D

 Motorola, Inc. 1995

POWER TRANSISTORS

10 AMPERES

800 VOLTS

125 AND 175 WATTS





*Motorola Preferred Device





CASE 1–07

TO–204AA

MJ16018

CASE 340F–03

TO–247AE
MJW16018

REV 1

 

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

ÎÎÎ

ÎÎÎ

ÎÎÎ

Unit

OFF CHARACTERISTICS

(1)

Collector–Emitter Sustaining Voltage (Table 1) (IC = 50 mA, IB = 0)

V

CEO(sus)

800

—

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector Cutoff Current

(V

CEV

= 1500 Vdc, V

BE(off)

= 1.5 Vdc)

(V

CEV

= 1500 Vdc, V

BE(off)

= 1.5 Vdc, TC = 100_C)

I

CEV

—
—

—
—

0.25

1.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

Collector Cutoff Current (VCE = 1500 Vdc, RBE = 50 Ω, TC = 100_C)

I

CER

—

—

2.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

Emitter Cutoff Current (VEB = 6 Vdc, IC = 0)

I

EBO

—

—

0.1

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

I

S/b

See Figure 13

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 14

ON CHARACTERISTICS

(1)

Collector–Emitter Saturation Voltage

(IC = 5 Adc, IB = 2 Adc)
(IC = 10 Adc, IB = 5 Adc)
(IC = 5 Adc, IB = 2 Adc, TC = 100_C)

V

CE(sat)

—
—
—

—
—
—

1
5

1.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Base–Emitter Saturation Voltage (IC = 5 Adc, IB = 2 Adc)

Base–Emitter Saturation Voltage (IC = 5 Adc, IB = 2 Adc, TC = 100_C)

V

BE(sat)

—
—

—
—

1.5

1.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

DC Current Gain (IC = 5 Adc, VCE = 5 Vdc)

h

FE

4

—

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

—

DYNAMIC CHARACTERISTICS

Output Capacitance (VCB = 10 Vdc, IE = 0, f

test

= 1 kHz)

C

ob

—

—

450

ÎÎÎ

ÎÎÎ

ÎÎÎ

pF

SWITCHING CHARACTERISTICS

Inductive Load (Table 1)

Storage Time

t

sv

—

4000

8000

ÎÎÎ

ÎÎÎ

ÎÎÎ

Fall Time

_

C)

t

fi

—

60

200

ÎÎÎ

ÎÎÎ

ÎÎÎ

Crossover Time

(IC = 5 Adc,
IB1 = 2 Adc,

J

= 25_C)

t

c

—

90

300

ÎÎÎ

ÎÎÎ

ÎÎÎ

Storage Time

B1

= 2 Adc,

V

BE(off)

= 2 Vdc,

t

sv

—

4500

9000

ÎÎÎ

ÎÎÎ

ÎÎÎ

Fall Time

V

CE(pk)

= 400 Vdc)

PW = 25 µs

_

C)

t

fi

—

80

250

ÎÎÎ

ÎÎÎ

ÎÎÎ

Crossover Time

PW = 25 µs

J

= 100_C)

t

c

—

110

375

ÎÎÎ

ÎÎÎ

ÎÎÎ

Resistive Load (Table 1)

Delay Time

t

d

—

85

200

ÎÎÎ

ÎÎÎ

ÎÎÎ

Rise Time

t

r

—

900

2000

ÎÎÎ

ÎÎÎ

ÎÎÎ

Storage Time

IB1 = 2 Adc, IB2 = 2 Adc,
RB2 = 3 Ω, PW = 25 µs,

t

s

—

4500

9000

ÎÎÎ

ÎÎÎ

ÎÎÎ

Fall Time

RB2 = 3 Ω, PW = 25 µs,
Duty Cycle v 2%)

t

f

—

200

400

ÎÎÎ

ÎÎÎ

ÎÎÎ

(1) Pulse Test: PW = 300 µs, Duty Cycle v 2%.

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

IC = 1 A

100

0.2

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

1

0.5 3 10 15

10

7

Figure 2. Collector Saturation Region

0.07
IB, BASE CURRENT (AMPS)

1

0.2 0.7

7

3
2

70

h

FE

, DC CURRENT GAIN

3

VCE = 5 V

1 2 5 7

10

5

TC = 25°C

3 A

TC = 100°C

0°C

25°C

30

1 7

50

20

5

2

0.3 0.7 20.15 5 0.3 0.5 3

0.1

0.7

0.3

0.2

0.5

10 A

0.1

5 A 8 A

Baker Clamped

(TJ = 25

(TJ = 100

Baker Clamped
(IC = 5 Adc, VCC = 250 Vdc,

ns

ns

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3

Motorola Bipolar Power Transistor Device Data

C, CAPACITANCE (pF)

V

BE

, BASE–EMITTER VOLTAGE (VOLTS)

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.1
IC, COLLECTOR CURRENT (AMPS)

0.2 1

5

1

0.7

0.5

10

IC, COLLECTOR CURRENT (AMPS)

7
5

1

0.5

0.2

0.2

Figure 3. Collector–Emitter Saturation Region

50.50.1 0.2 0.3 1 103 7

Figure 4. Base–Emitter Saturation Region

Figure 5. Collector Cutoff Region

10

4

VBE, BASE–EMITTER VOLTAGE (VOLTS)

10

–1

0

0.1

IC/IB = 2.5
TC = 25

°

C

2 10

–0.4

Figure 6. Typical Capacitance

10K

VCB, COLLECTOR–BASE VOLTAGE (VOLTS)

TC = 25°C

C

ib

1

, COLLECTOR CURRENT ( A)

µ

I

C

0.3
TC = 25°C THRU 100°C

10

3

10

2

10

1

10

0

–0.2 +0.2 +0.4 +0.6

TJ = 150°C

125°C

100°C

75°C

REVERSE FORWARD

25°C

VCE = 250 V

1K

100

1

2 5 10 20 50 100 200 500 1K

IC/IB = 2.5
TC = 100

°

C

IC/IB = 5
TC = 25

°

C

IC/IB = 5
TC = 100

°

C

0.5 0.7 52

5

IC/IB = 2.5

0.1

0.05

0.07

3
2

10

3
2

0.7

0.3

0.3 0.7 3 7

C

ob

TYPICAL STATIC CHARACTERISTICS

t

fi

, FALL TIME (ns)

Figure 7. Storage Time Figure 8. Inductive Switching Fall Time

IC, COLLECTOR CURRENT (AMPS)

2 3 5 7 10

0.2

, STORAGE TIME ( s)t

sv

1

IC, COLLECTOR CURRENT (AMPS)

2 3 5 7 10

1000

500

200

70

30

10

1

V

BE(off)

= 2 V

TC = 100

°

C

700

300

100

50

20

NO BAKER CLAMP
BAKER CLAMPED

NO BAKER CLAMP
BAKER CLAMPED

V

BE(off)

= 2 V

TC = 100

°

C

IC/IB = 2.5

2.5

20

7

3

1

0.5

10

5

2

0.7

0.3

µ

5

5

IC/IB = 2.5

5

5

2.5

TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS

 

4

Motorola Bipolar Power Transistor Device Data

Figure 9. Inductive Switching Crossover Time Figure 10. (tsv) Storage Time versus I

B1

Pulse Width

IC, COLLECTOR CURRENT (AMPS)

2 3 5 7 101

V

BE(off)

= 2 V

TC = 100

°

C

NO BAKER CLAMP
BAKER CLAMPED

Figure 11. Reverse Base Current versus

Off Voltage

VOLTAGE AND CURRENT

IC, COLLECTOR CURRENT (AMPS)

2000

1000

500

100

50

20

PULSE WIDTH (

µ

s)

5 9 13 17 21

6

5

4

3

2

0

1

1

IC = 5 A
IB1 = 2 A
IB2 = 2 A OR
VBE = –2 V

Figure 12. Inductive Switching Measurements

700

300
200

70

30

25

I

B2

, REVERSE BASE CURRENT (AMPS)

V

BE(off)

, REVERSE BASE–EMITTER VOLTAGE (VOLTS)

6

5

–1 –2 –3 –4

4

3

2

1

IC = 5 A
IB1 = 2 A
VCE = 400 V

–5 –6

t

c

, CROSSOVER TIME (ns)

, STORAGE TIME ( s)t

sv

µ

IC/IB = 2.5

2.5

5

5

t

fi

t

rv

TIME

I

C

90% I

B1

IC pk

V

CE(pk)

90% V

CE(pk)

90% I

C(pk)

10% V

CE(pk)

10%

IC pk

2% I

C

I

B

t

sv

t

ti

t

c

V

CE

TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS

I

C(pk)

, PEAK COLLECTOR CURRENT (AMPS)

10

I

C

, COLLECTOR CURRENT (AMPS)

Figure 13. Maximum Forward Bias

Safe Operating Area

Figure 14. Maximum Reverse Bias

Safe Operating Area

100

10

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.1
15 1K

30
20

2

50

1

0.5

0.3

0.2

BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN
LIMIT

20 50 100 200 500

TC = 25°C

10µs

1 ms

dc

5
3

MJ16018

MJW16018

30 300

16

V

CE(pk)

, PEAK COLLECTOR VOLTAGE (VOLTS)

0

2K

12

8

4

400 800 1.8K1K 1.6K

V

BE(off)

= 0 V

0 1.2K200 600 1.4K

14

10

6

2

V

BE(off)

= 2 V

IC/IB1 = 2.5, 5

TC ≤ 100°C

GUARANTEED SAFE OPERATING AREA LIMITS

 

5

Motorola Bipolar Power Transistor Device Data

POWER DERATING FACTOR (%)

100

0

TC, CASE TEMPERATURE (

°

C)

0

40 200

80

60

40

20

MJ16018
MJW16018

80 120 160

Figure 15. Power Derating

SECOND BREAKDOWN

DERATING

THERMAL

DERATING

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a
transistor: average junction temperature and second break­down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa­tion than the curves indicate.

The data of Figure 13 is based on TC = 25_C; T

J(pk)

is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der­ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 13 may be found at any case tem­perature by using the appropriate curve on Figure 15.

T

J(pk)

may be calculated from the data in Figure 16. At

high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations
imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base–to–emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage current condition allowable dur­ing r everse biased turnoff. This rating is verified u nder
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 14 gives the RBSOA character­istics.

t, TIME (ms)

1.0

0.01

0.01

0.7

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0 2.0 5.0 10 20 50 100 200 500

R

θ

JC

(t) = r(t) R

θ

JC

R

θ

JC

= 1.0

°

C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME @ t

1

T

J(pk)

– TC = P

(pk)

R

θ

JC

(t)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

D = 0.5

0.2

0.01
SINGLE PULSE

0.1

0.1 0.50.2 1.0 k

Figure 16. Thermal Response

0.5

0.3

0.07

0.03

0.02 0.05

0.02

0.05

 

6

Motorola Bipolar Power Transistor Device Data

Resistive SwitchingInductive SwitchingRBSOAV

CEO(sus)

Input

Conditions

Circuit
Values

Test Circuit

Table 1. Test Conditions for Dynamic Performance

+15

1 F

µ

100 F

µ

500 F

µ

150

Ω

100

Ω

V

off

+10

50

Ω

150

Ω

MUR105

MJE210

1 F

µ

MTP12N10

MTP8P10

MTP8P10

A

R

B1

R

B2

Note: Adjust V

off

to obtain desired V

BE(off)

at Point A

Drive Circuit

For t

d

and t

f

:

H.P. 214OREQUIV.

P.G.

50

Ω

A

0

V

in

t

r

15 ns

≤

≈

11 V

For t

s

and t

f

:

Inductive Switching Drive

Circuit

L = 10 mH

R

B2

=

V

CC

= 20 Volts

I

(pk)

= 50 mA

S

1

Closed

∞

L = 200

R

B2

= 0

V

CC

= 20 Volts

S

1

Closed

µ

H

R

B1

selected for

desired I

B1

L = 200

R

B2

= 0 when V

µ

H

BE(off)

is specified or

selected for desired I

B2

V

CC

≈

20 Volts, Adjusted to obtain

desired IC

R

B1

selected for desired I

B1

S

1

= Open for baker

clamp condition

V

CC

= 250 Volts

R

B

selected for desired I

B1

R

L

selected for desired I

C

for t

d

and t

r

V

CC

= 250 Volts

for t

s

and t

f

R

B

= 0

R

B1

selected for I

B1

& R

B2

& I

B2

R

L

selected for desired I

C

T

1

0 V

+V

–V

A

MUR1100

MUR105

MUR105

T.U.T.

L

MUR8100

V

CC

V

clamp

S

1

*I

C

*I

B

V

CE

I

B

I

C

I

B1

I

B2

I

C(pk)

V

CE(pk)

A

R

B

*I

C

*I

B

S

1

MUR105

MUR105

MUR1100

T.U.T.

R

L

V

CC

*Tektronix AM503

P6302 or Equivalent

Scope — Tektronix

7403 or Equivalent

*Tektronix AM503

P6302 or Equivalent

T

1

adjusted to obtain I

C(pk)

T

1

≈

L

coil

(I

Cpk

)

V

CC

 

7

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 1.550 REF 39.37 REF
B ––– 1.050 ––– 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19

L 0.665 BSC 16.89 BSC
N ––– 0.830 ––– 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

A

N

E

C

K

–T–

SEATING
PLANE

2 PLD

M

Q

M

0.13 (0.005) Y

M

T

M

Y

M

0.13 (0.005) T

–Q–

–Y–

2

1

U

L

G

B

V

H

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

CASE 340F–03

TO–247AE

ISSUE E

DIMAMIN MAX MIN MAX

INCHES

20.40 20.90 0.803 0.823

MILLIMETERS

B 15.44 15.95 0.608 0.628
C 4.70 5.21 0.185 0.205
D 1.09 1.30 0.043 0.051

E 1.50 1.63 0.059 0.064

F 1.80 2.18 0.071 0.086
G 5.45 BSC 0.215 BSC
H 2.56 2.87 0.101 0.113

J 0.48 0.68 0.019 0.027
K 15.57 16.08 0.613 0.633

L 7.26 7.50 0.286 0.295

P 3.10 3.38 0.122 0.133
Q 3.50 3.70 0.138 0.145
R 3.30 3.80 0.130 0.150
U 5.30 BSC 0.209 BSC

V 3.05 3.40 0.120 0.134

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

STYLE 3:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

R

P

A

K

V

F

D

G

U

L

E

0.25 (0.010)MT B

M

0.25 (0.010)MY Q

S

J

H

C

4

1 2 3

–T–

–B–

–Y–

–Q–

 

8

Motorola Bipolar Power Transistor Device Data

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the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

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