Datasheet MJ15025, MJ15023 Datasheet (Motorola)

1

Motorola Bipolar Power Transistor Device Data

  

The MJ15023 and MJ15025 are PowerBase power transistors designed for high

power audio, disk head positioners and other linear applications.

• High Safe Operating Area (100% Tested) —
2 A @ 80 V

• High DC Current Gain —
hFE = 15 (Min) @ IC = 8 Adc

MAXIMUM RATINGS

Rating

Symbol

MJ15023

MJ15025

Unit

Collector–Emitter Voltage

V

CEO

200

250

Vdc

Collector–Base Voltage

V

CBO

350

400

Vdc

Emitter–Base Voltage

V

EBO

5

Vdc

Collector–Emitter Voltage

V

CEX

400

Vdc

Collector Current — Continuous

Peak (1)

I

C

16
30

Adc

Base Current — Continuous

I

B

5

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25_C

P

D

250

1.43

Watts
W/_C

Operating and Storage Junction

Temperature Range

TJ, T

stg

–65 to +200

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

0.70

_

C/W

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ15023/D

 Motorola, Inc. 1995




16 AMPERE

SILICON

POWER TRANSISTORS

200 AND 250 VOLTS

250 WATTS

*Motorola Preferred Device





CASE 1–07

TO–204AA

(TO–3)

REV 7

 

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Symbol

Min

Max

ÎÎÎ

ÎÎÎ

ÎÎÎ

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 100 mAdc, IB = 0) MJ15023

MJ15025

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

V

CEO(sus)

200
250

—
—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Collector Cutoff Current

(VCE = 200 Vdc, V

BE(off)

= 1.5 Vdc) MJ15023

(VCE = 250 Vdc, V

BE(off)

= 1.5 Vdc) MJ15025

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

I

CEX

—
—

250
250

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

µAdc

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0) MJ15023
(VCE = 200 Vdc, IB = 0) MJ15025

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

I

CEO

—
—

500
500

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

µAdc

Emitter Cutoff Current

(VCE = 5 Vdc, IB = 0) Both

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

I

EBO

—

500

ÎÎÎ

ÎÎÎ

ÎÎÎ

µAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 50 Vdc, t = 0.5 s (non–repetitive))
(VCE = 80 Vdc, t = 0.5 s (non–repetitive))

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

I

S/b

5
2

—
—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Adc

ON CHARACTERISTICS

DC Current Gain

(IC = 8 Adc, VCE = 4 Vdc)
(IC = 16 Adc, VCE = 4 Vdc)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

h

FE

15

5

60
—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

—

Collector–Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

V

CE(sat)

—

1.4

4.0

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Base–Emitter On Voltage

(IC = 8 Adc, VCE = 4 Vdc)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

V

BE(on)

—

2.2

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 1 Adc, VCE = 10 Vdc, f

test

= 1 MHz)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

f

T

4

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f

test

= 1 MHz)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

C

ob

—

600

ÎÎÎ

ÎÎÎ

ÎÎÎ

pF

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2%.

100

Figure 1. Active–Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.1 0.2 0.5 10 1 k

20

TC = 25°C

50 250

0.1

I

C

, COLLECTOR CURRENT (AMPS)

0.2

1.0

5.0

50

500100

10

20

BONDING WIRE LIMITED
THERMAL LIMITATION
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED

There are two limitations on the powerhandling ability of a
transistor: average junction temperature and second break­down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa­tion than the curves indicate.

The data of Figure 1 is based on T

J(pk)

= 200_C; TC is
variable depending on conditions. At high case temper­atures, thermal limitations will reduce the power that can be
handled to values less than the l imitations imposed b y
second breakdown.

 

3

Motorola Bipolar Power Transistor Device Data

f

T

, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 2. Capacitances

Figure 3. Current–Gain — Bandwidth Product

Figure 4. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

0.1 0.3 0.5

9

5

VCE = 4.0 V

8

2

1.0 5.0

0

1

3

4

7
6

2.0 10

4000

0.3
VR, REVERSE VOLTAGE (VOLTS)

50

C, CAPACITANCE (pF)

TJ = 25°C

10010

500

100

1000

300301.00.5

Figure 5. “On” Voltages

5.0

1.8

0.1
IC, COLLECTOR CURRENT (AMPS)

10

V, VOLTAGE (VOLTS)

TJ = 25°C

5.0

1.0

0.8

0.2
0

1.4

2.01.0

V

CE(sat)

@ IC/IB = 10

0.5

V

BE(on)

@ VCE = 4.0 V

IC, COLLECTOR CURRENT (AMPS)

200

h

FE

, DC CURRENT GAIN

100

2.0

5.0

10

20

50

C

ob

TJ = 25°C

TJ = 100°C

TJ = 25°C
VCE = 10 V
f

Test

= 1 MHz

25°C

100°C

3000

0.2 10 205.02.01.00.5

C

ib

100°C

TYPICAL CHARACTERISTICS

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4

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 1.550 REF 39.37 REF
B ––– 1.050 ––– 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N ––– 0.830 ––– 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

A

N

E

C

K

–T–

SEATING
PLANE

2 PLD

M

Q

M

0.13 (0.005) Y

M

T

M

Y

M

0.13 (0.005) T

–Q–

–Y–

2

1

U

L

G

B

V

H

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

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MJ15023/D

*MJ15023/D*

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