Datasheet MJ 15022 ISC Datasheet (INCHANGE)

固电半导体

INCHANGE SEMICONDUCTOR

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors MJ15022 MJ15024

DESCRIPTION

·With TO-3 package

·Complement to type MJ15023; MJ15025

·Excellent safe operating area

·High DC current gain

= 15 (Min) @ IC = 8 Adc

h

FE

APPLICATIONS

·Designed for high power audio, disk head positioners and other linear applications

PINNING(see Fig.2)

PIN DESCRIPTION

1

2 Emitter

3 Collector

Base

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=℃)

SYMBOL PARAMETER CONDITIONS VALUE UNIT

V

CBO

V

CEO

V

EBO

IC Collector current 16 A

ICM Collector current-peak 30 A

IB Base current 5 A

PD Total power dissipation TC=25℃ 250 W

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage Open collector 5 V

MJ15022 350 MJ15024 MJ15022 200 MJ15024

Open emitter

Open base

V

400

V

250

Tj Junction temperature 150 ℃

T

Storage temperature -65~200 ℃

stg

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

R

Thermal resistance junction to case 0.70 ℃/W

th j-c

固电半导体

INCHANGE SEMICONDUCTOR

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors MJ15022 MJ15024

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V

CEO(SUS)

V

CEsat-1

V

CEsat-2

VBE Base-emitter on voltage IC=8A ; VCE=4V 2.2 V

I

CEO

I

CEX

I

EBO

h

FE-1

Collector-emitter sustaining voltage

Collector-emitter saturation voltage IC=8A; IB=0.8A 1.4 V

Collector-emitter saturation voltage IC=16A; IB=3.2A 4.0 V

Collector cut-off current

Emitter cut-off current VEB=5V; IC=0 0.5 mA

DC current gain IC=8A ; VCE=4V 15 60

MJ15022 200

=0.1A ;IB=0

I

C

MJ15024

MJ15022 VCE=150V; IB=0

MJ15024 V

MJ15022 VCE=200V; V

MJ15024 V

=200V; IB=0

CE

=250V; V

CE

BE(off)

250

0.5 mA

=1.5V

0.25 mA

=1.5V

V

h

DC current gain IC=16A ; VCE=4V 5

FE-2

I

s/b

COB Output capacitance IE=0 ; VCB=10V;f=1.0MHz 500 pF

fT Transition frequency IC=1A ; VCE=10V;f=1.0MHz 4 MHz

Second breakdown collector current with base forward biased

V

=50Vdc,t=0.5 s,

CE

=80Vdc,t=0.5 s,Nonrepetitive

V

CE

5.0

2.0

A

2

固电半导体

INCHANGE SEMICONDUCTOR

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors MJ15022 MJ15024

PACKAGE OUTLINE

3

Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

固电半导体

INCHANGE SEMICONDUCTOR

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors MJ15022 MJ15024

4