Datasheet MJ 15015 ONS Datasheet

Î

ON Semiconductor

NPN

Complementary Silicon High-Power Transistors

. . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc–to–dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055.

• Current–Gain — Bandwidth–Product @ I

fT= 0.8 MHz (Min) – NPN

= 2.2 MHz (Min) – PNP

• Safe Operating Area — Rated to 60 V and 120 V, Respectively

*MAXIMUM RATINGS

ООООООООО

Collector–Emitter Voltage Collector–Base Voltage Collector–Emitter Voltage Base

ООООООООО

Reversed Biased Emitter–Base Voltage Collector Current — Continuous Base Current Total Device Dissipation @ TC = 25C

ООООООООО

Derate above 25C Operating and Storage Junction

Temperature Range

ООООООООО

Rating

= 1.0 Adc

C

ÎÎÎ

Symbol

V

CEO

V

CBO

V

CEV

ÎÎÎ

V

EBO

I

C

I

B

P

D

ÎÎÎ

TJ, T

stg

ÎÎÎ

2N3055A

ÎÎ

60 100 100

ÎÎ

MJ15016

120 200 200

ÎÎ

7.0 15

7.0

MJ15015

115

ÎÎ

0.65

180

ÎÎ

1.03

–65 to +200

ООООО

Î

Unit

Vdc Vdc Vdc

Î

Vdc Adc Adc

Watts

Î

W/C

C

Î

2N3055A

MJ15015

PNP

MJ15016

*ON Semiconductor Preferred Device

15 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60, 120 VOL TS

115, 180 WATTS

CASE 1–07

TO–204AA

(TO–3)

*

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

ООООООООО

*Indicates JEDEC Registered Data. (2N3055A)

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2001

May, 2001 – Rev. 4

Symbol

R

θ

JC

ÎÎÎ

Max

1.52

ÎÎ

Max

0.98

ÎÎ

1 Publication Order Number:

Unit

C/W

Î

2N3055A/D

200

150

100

2N3055A MJ15015 MJ15016

MJ15015 MJ15016

50

D(AV)

P , AVERAGE POWER DISSIPATION (W)

0

0 25 50 75 100 125 150 175 200

2N3055A

T

, CASE TEMPERATURE (°C)

C

Figure 1. Power Derating

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2

2N3055A MJ15015 MJ15016

Î

µ yy

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

C

Symbol

Min

Max

Unit

OFF CHARACTERISTICS (1)

*Collector–Emitter Sustaining Voltage 2N3055A

ООООООООООООООООООО

(I

= 200 mAdc, IB = 0) MJ15015, MJ15016

C

Collector Cutoff Current

ООООООООООООООООООО

= 30 Vdc, V

(V

CE

(V

= 60 Vdc, V

CE

= 0 Vdc) 2N3055A

BE(off)

= 0 Vdc) MJ15015, MJ15016

BE(off)

*Collector Cutoff Current 2N3055A

(V

= Rated Value, V

CEV

Collector Cutoff Current

ООООООООООООООООООО

(V

= Rated Value, V

CEV

= 150C) MJ15015, MJ15016

T

C

ООООООООООООООООООО

= 1.5 Vdc) MJ15015, MJ15016

BE(off)

= 1.5 Vdc, 2N3055A

BE(off)

Emitter Cutoff Current 2N3055A

(V

= 7.0 Vdc, IC = 0) MJ15015, MJ15016

EB

*SECOND BREAKDOWN

ОООООООООООООООООООООООООООООООО

Second Breakdown Collector Current with Base Forward Biased

(t = 0.5 s non–repetitive) 2N3055A

ООООООООООООООООООО

= 60 Vdc) MJ15015, MJ15016

(V

CE

V

CEO(sus)

ÎÎÎ

I

CEO

ÎÎÎ

I

CEV

I

CEV

ÎÎÎ

I

EBO

I

S/b

ÎÎÎ

60

ÎÎ

120

ÎÎ

— —

ÎÎ

— —

ÎÎ

— —

ÎÎ

— —

1.95

ÎÎ

3.0

—

ÎÎ

—

ÎÎ

0.7

0.1

ÎÎ

5.0

1.0

ÎÎ

30

6.0

ÎÎ

5.0

0.2

—

ÎÎ

—

Vdc

ÎÎ

mAdc

ÎÎ

mAdc

ÎÎ

mAdc

Adc

ÎÎ

*ON CHARACTERISTICS (1)

DC Current Gain

(I

= 4.0 Adc, VCE = 2.0 Vdc)

ООООООООООООООООООО

C

= 4.0 Adc, VCE = 4.0 Vdc)

(I

C

ООООООООООООООООООО

(I

= 10 Adc, VCE = 4.0 Vdc)

C

Collector–Emitter Saturation Voltage

ООООООООООООООООООО

(I

= 4.0 Adc, IB = 400 mAdc)

C

= 10 Adc, IB = 3.3 Adc)

(I

C

ООООООООООООООООООО

(I

= 15 Adc, IB = 7.0 Adc)

C

Base–Emitter On Voltage

ООООООООООООООООООО

(I

= 4.0 Adc, VCE = 4.0 Vdc)

C

h

FE

ÎÎÎ

V

CE(sat)

ÎÎÎ

V

BE(on)

ÎÎÎ

10

ÎÎ

20

ÎÎ

5.0

ÎÎ

— —

ÎÎ

—

0.7

ÎÎ

70

ÎÎ

70

ÎÎ

—

ÎÎ

1.1

3.0

ÎÎ

5.0

1.8

ÎÎ

—

ÎÎ

Vdc

ÎÎ

Vdc

ÎÎ

*DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product 2N3055A, MJ15015

(I

= 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) MJ15016

ООООООООООООООООООО

C

Output Capacitance

(V

= 10 Vdc, IE = 0, f = 1.0 MHz)

CB

ООООООООООООООООООО

*SWITCHING CHARACTERISTICS (2N3055A only)

RESISTIVE LOAD

Delay Time Rise Time

(VCC = 30 Vdc, IC = 4.0 Adc,

IB1 = IB2 = 0.4 Adc,

Storage Time

= 25 µs Duty Cycle  2%

t

p

Fall Time

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle  2%. *Indicates JEDEC Registered Data. (2N3055A)

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f

T

ÎÎÎ

C

ob

ÎÎÎ

t

d

t

r

t

s

t

f

0.8

2.2

ÎÎ

60

ÎÎ

— — — —

6.0 18

ÎÎ

600

ÎÎ

0.5

4.0

3.0

6.0

MHz

ÎÎ

pF

ÎÎ

µs µs µs µs

3

2N3055A MJ15015 MJ15016

200

100

, DC CURRENT GAIN

FE

h

V, VOLTAGE (VOLTS)

T

= 150°C

J

70 50

30

-55°C

20

VCE = 4.0 V

25°C

10

7 5

3

2

0.3 0.5 0.7 1 2 3 5 7 15

0.2

, COLLECTOR CURRENT (AMP)

I

C

Figure 2. DC Current Gain

3.5 T

= 25°C

3

C

2.5

2

1.5

V

@ IC/IB = 10

BE(sat)

V

@ VCE = 4 V

BE(on)

V

@ IC/IB = 10

CE(sat)

0.3 0.5 0.7 1 2 3 5 7 20

, COLLECTOR CURRENT (AMP)

I

C

0.5

1

0

0.2

Figure 4. “On” Voltages

2.8 T

= 25°C

2.4

J

2

1.6

IC = 1 A

4 A

8 A

1.2

0.8

0.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

0

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5

10

0.005

, BASE CURRENT (AMP)

I

B

Figure 3. Collector Saturation Region

10

5.0

MJ15016

2.0

2N3055A MJ15015

1.0

10

T

f, CURRENT-GAIN  BANDWIDTH PRODUCT (MHz)

0.1

0.2 0.3 0.5 1.0 2.0

I

, COLLECTOR CURRENT (AMPS)

C

Figure 5. Current–Gain — Bandwidth Product

25 µs

+13 V

30 Ω

0

-11 V

tr, t

≤ 10 ns

f

DUTY CYCLE = 1.0%

Figure 6. Switching Times Test Circuit

(Circuit shown is for NPN)

-5 V

1N6073

V

CC

+30 V

7.5 Ω

SCOPE

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10

7

VCC = 30 V

5

I

= 10

C/IB

= 25°C

T

J

3

2

t

r

1

0.7

t, TIME (s)µ

0.5

0.3

0.2

0.1

0.2

0.3 0.5 0.7 1 2 3 7 15

t

d

510

IC, COLLECTOR CURRENT (AMP)

Figure 7. Turn–On Time

4

2N3055A MJ15015 MJ15016

0.1

t, TIME (s)µ

0.7

0.5

0.3

0.2

0.1

10,000

1000

µ

, COLLECTOR CURRENT (A)

C

I

0.01

10

100

7 5

3

2

10

1.0

0.1

t

s

t

f

VCC = 30 I

= 10

C/IB

1 = IB2

I

B

T

= 25°C

J

0.2

0.3 0.5 0.7 1 3 5 15

2

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Turn–Off Times

COLLECTOR CUT–OFF REGION

NPN

VCE = 30 V

T

= 150°C

J

100°C

IC = I

CES

REVERSE

25°C

+0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5

+0.2

VBE, BASE-EMITTER VOLTAGE (VOLTS)

FORWARD

710

400

200

100

C, CAPACITANCE (pF)

50

30

20

1000

100

10

1.0

0.1

, COLLECTOR CURRENT (A)µI

C

0.01

0.001

C

ib

1.0

20 50 100 200 500 10002.0 5.0 10

VR, REVERSE VOLTAGE (VOLTS)

Figure 9. Capacitances

PNP

VCE = 30 V

T

= 150°C

J

100°C

IC = I

REVERSE FORWARD

25°C

-0.1 0 +0.1 +0.2 +0.3

-0.2 VBE, BASE-EMITTER VOLTAGE (VOLTS)

CES

C

ob

T

= 25°C

J

2N3055A MJ15015

MJ15016

+0.4 +0.5

20

10

5

2

, COLLECTOR CURRENT (AMPS)

C

I

1

Figure 10. 2N3055A, MJ15015

30 µs

100 µs

1 ms

BONDING WIRE LIMIT THERMAL LIMIT @ T (SINGLE PULSE)

= 25°C

C

100 ms

dc

SECOND BREAKDOWN LIMIT

10 20 10060

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 12. Forward Bias Safe Operating Area

2N3055A

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Figure 11. MJ15016

20

0.1ms

10

5.0

1.0ms

2.0

1.0

, COLLECTOR CURRENT (AMP)

0.5

C

I

BONDING WIRE LIMIT THERMAL LIMIT @ T (SINGLE PULSE) SECOND BREAKDOWN LIMIT

0.2 15 20 10060

30 120

= 25°C

C

100ms

dc

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 13. Forward Bias Safe Operating Area

MJ15015, MJ15016

5

2N3055A MJ15015 MJ15016

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe Operating area curves indicate IC – V

CE

limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figures 12 and 13 is based on T

T

is variable depending on power level. Second

J(pk)

= 25C;

C

breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1.

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6

2N3055A MJ15015 MJ15016

PACKAGE DIMENSIONS

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

A

N

C

E

D

2 PL

0.13 (0.005) Y

U

V

H

L

2

1

G

K

M

–Y–

–T–

SEATING PLANE

M

Q

T

M

B

–Q–

0.13 (0.005) T

M

Y

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

A 1.550 REF 39.37 REF B --- 1.050 --- 26.67 C 0.250 0.335 6.35 8.51 D 0.038 0.043 0.97 1.09 E 0.055 0.070 1.40 1.77 G 0.430 BSC 10.92 BSC H 0.215 BSC 5.46 BSC K 0.440 0.480 11.18 12.19 L 0.665 BSC 16.89 BSC N --- 0.830 --- 21.08 Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77

MILLIMETERSINCHES

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2N3055A MJ15015 MJ15016

PowerBase is a trademark of Semiconductor Components Industries, LLC.

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

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