Page 1
MJ15003 (NPN),
Î
Î
Î
Î
Î
Î
Î
Î
MJ15004 (PNP)
Preferred Device
Complementary Silicon
Power Transistors
The MJ15003 and MJ15004 are PowerBaset power transistors
designed for high power audio, disk head positioners and other linear
applications.
http://onsemi.com
Features
• High Safe Operating Area (100% Tested) − 5.0 A @ 50 V
• For Low Distortion Complementary Designs
• High DC Current Gain − h
= 25 (Min) @ IC = 5 Adc
FE
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Base Current − Continuous
Emitter Current − Continuous
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
ОООООООООО
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes 1/16″ from Case for v 10 secs
ОООООООООО
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
I
E
P
D
TJ, T
stg
Î
Symbol
R
q
JC
T
L
Î
Value
140
140
5
20
5
25
250
1.43
– 65 to +200
ÎÎ
Max
0.70
265
ÎÎ
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/°C
°C
Î
Unit
°C/W
°C
Î
20 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
140 VOLTS, 250 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
MJ1500xG
AYYWW
MEX
MJ1500x = Device Code
x = 3 or 4
G = Pb−Free Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 11
Device Package Shipping
MJ15003 TO−204AA 100 Units/Tray
MJ15003G TO−204AA
100 Units/Tray
(Pb−Free)
MJ15004G
TO−204AAMJ15004
TO−204AA
100 Units/Tray
100 Units/Tray
(Pb−Free)
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MJ15003/D
Page 2
MJ15003 (NPN), MJ15004 (PNP)
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (Note 1)
(IC = 200 mAdc, IB = 0)
ООООООООООООООООООООО
Collector Cutoff Current
(VCE = 140 Vdc, V
(VCE = 140 Vdc, V
ООООООООООООООООООООО
= 1.5 Vdc)
BE(off)
= 1.5 Vdc, TC = 150°C)
BE(off)
Collector Cutoff Current
(VCE = 140 Vdc, IB = 0)
ООООООООООООООООООООО
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Baised
(VCE = 50 Vdc, t = 1 s (non repetitive))
ООООООООООООООООООООО
(VCE = 100 Vdc, t = 1 s (non repetitive))
ООООООООООООООООООООО
ON CHARACTERISTICS
DC Current Gain
(IC = 5 Adc, VCE = 2 Vdc)
Collector Emitter Saturation Voltage
(IC = 5 Adc, IB = 0.5 Adc)
ООООООООООООООООООООО
Base Emitter On Voltage
(IC = 5 Adc, VCE = 2 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
ООООООООООООООООООООО
(IC = 0.5 Adc, VCE = 10 Vdc, f
= 0.5 MHz)
test
Output Capacitance
(VCB = 10 Vdc, IE = 0, f
ООООООООООООООООООООО
= 1 MHz)
test
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
Symbol
V
CEO(sus)
ÎÎ
I
CEX
ÎÎ
I
CEO
ÎÎ
I
EBO
I
S/b
ÎÎ
ÎÎ
h
FE
V
CE(sat)
ÎÎ
V
BE(on)
f
T
ÎÎ
c
ob
ÎÎ
Min
140
ÎÎ
−
−
ÎÎ
−
ÎÎ
−
ÎÎ
5.0
1.0
ÎÎ
25
−
ÎÎ
−
2.0
ÎÎ
−
ÎÎ
Max
−
Î
100
Î
2
250
Î
100
−
Î
−
Î
150
1.0
Î
2.0
−
Î
1000
Î
Unit
Vdc
Î
mAdc
Î
mAdc
mAdc
Î
mAdc
Adc
Î
Î
−
Vdc
Î
Vdc
MHz
Î
pF
Î
20
15
TC = 25°C
10
7
5
3
2
TJ = 200°C
BONDING WIRE LIMITED
1
0.7
, COLLECTOR CURRENT (AMP)
0.5
C
I
THERMAL LIMITATION (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
CEO
0.3
0.2
2 3 50 70 10020 30
5 7 10 200
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. Active−Region Safe Operating Area
There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − V
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on T
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
150
http://onsemi.com
2
= 200°C; TC is
J(pk)
CE
Page 3
MJ15003 (NPN), MJ15004 (PNP)
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
A
N
C
E
2 PLD
0.13 (0.005) Y
U
V
H
L
2
1
G
−T−
K
M
−Y−
B
T
SEATING
PLANE
M
Q
M
−Q−
0.13 (0.005) T
M
M
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
B −−− 1.050 −−− 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N −−− 0.830 −−− 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
MILLIMETERSINCHES
PowerBase is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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For additional information, please contact your
local Sales Representative.
MJ15003/D
3
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