
1
Motorola Bipolar Power Transistor Device Data
The MJ15001 and MJ15002 are EpiBase power transistors designed for h igh
power audio, disk head positioners and other linear applications.
• High Safe Operating Area (100% Tested) —
200 W @ 40 V
50 W @ 100 V
• For Low Distortion Complementary Designs
• High DC Current Gain —
hFE = 25 (Min) @ IC = 4 Adc
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Collector–Emitter Voltage
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Collector Current — Continuous
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Base Current — Continuous
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Emitter Current — Continuous
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Total Power Dissipation @ TC = 25_C
Derate above 25_C
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Operating and Storage Junction Temperature Range
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Thermal Resistance, Junction to Case
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Maximum Lead Temperature for Soldering Purposes:
1/16″ from Case for v 10 seconds
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SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ15001/D
15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
140 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)

2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Collector–Emitter Sustaining Voltage (1)
(IC, = 200 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 140 Vdc, V
BE(off)
= 1.5 Vdc)
(VCE = 140 Vdc, V
BE(off)
= 1.5 Vdc, TC = 150_C)
Collector Cutoff Current
(VCE = 140 Vdc, IB = 0)
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
Second Breakdown Collector Current with Base Forward Biased
(VCE = 40 Vdc, t = 1 s (non–repetitive))
(VCE = 100 Vdc, t = 1 s (non–repetitive))
DC Current Gain
(IC = 4 Adc, VCE = 2 Vdc)
Collector–Emitter Saturation Voltage
(IC = 4 Adc, IB = 0.4 Adc)
Base–Emitter On Voltage
(IC = 4 Adc, VCE = 2 Vdc)
Current–Gain — Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f
test
= 0.5 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f
test
= 1 MHz)
pF
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2%.
I
C
, COLLECTOR CURRENT (AMP)
5
Figure 1. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5 7 10 200
10
2
2 3 50 70 10020 30
7
200
1
3
0.5
0.2
0.7
0.3
TC = 25
°
C
TJ = 200°C
BONDING WIRE LIMITED
THERMAL LIMITATION (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
CEO
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 1 is based on TJ
(pk)
= 200_C; TC is
variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be
handled to values less than the l imitations imposed by
second breakdown.

3
Motorola Bipolar Power Transistor Device Data
f
T
, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
IC, COLLECTOR CURRENT (AMP)
0.7 1 2 3 5 107 200.2 0.3 0.5
2
0.7 1 2 3 5 107 200.2 0.3 0.5
Figure 2. Capacitances
IC, COLLECTOR CURRENT (AMP)
2.0
1.6
1.2
0.4
0.8
0
0.7 1 2 3 5 107 20
IC, COLLECTOR CURRENT (AMP)VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Current–Gain — Bandwidth Product
Figure 4. DC Current Gain
700
500
1000
3 5 10 1502
300
200
100
70
50
30
20
7
IC, COLLECTOR CURRENT (AMP)
Figure 5. “On” Voltages
10
20 30 7050 1001.5
9
8
10
0.3 0.5 10.2
4
3
2
1
0.7
MJ15002 (PNP)
0
3 5 1070.1 2
7
6
5
IC, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5
TJ = 25°C
VBE @ VCE = 2 Vdc
V
CE(sat)
@ IC/IB = 10
V, VOLTAGE (VOLTS)
TJ = 100°C
25°C
100°C
2.0
1.6
1.2
0.4
0.8
0
0.7 1 2 3 5 107 200.2 0.3 0.5
TJ = 100°C
25°C
h
FE
, DC CURRENT GAIN
VCE = 2 Vdc
TJ = 25°C
VCE = 10 V
f
test
= 0.5 MHz
C
ib
MJ15001 (NPN)
TJ = 25°C
MJ15001 (NPN)
MJ15002 (PNP)
h
FE
, DC CURRENT GAINV, VOLTAGE (VOLTS)
70
50
100
30
20
10
7
5
3
2
200
70
50
100
30
20
10
7
5
3
200
C, CAPACITANCE (pF)
C
ib
C
ob
C
ob
MJ15001 MJ15002
MJ15001 MJ15002
VCE = 2 Vdc
TJ = 100°C
25°C
VBE @ VCE = 2 Vdc
TJ = 25°C
100°C
V
CE(sat)
@ IC/IB = 10
TJ = 100°C
25°C
TYPICAL CHARACTERISTICS

4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 1.550 REF 39.37 REF
B ––– 1.050 ––– 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N ––– 0.830 ––– 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
A
N
E
C
K
–T–
SEATING
PLANE
2 PLD
M
Q
M
0.13 (0.005) Y
M
T
M
Y
M
0.13 (0.005) T
–Q–
–Y–
2
1
U
L
G
B
V
H
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
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MJ15001/D
*MJ15001/D*
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