Datasheet MJ15002, MJ15001 Datasheet (Motorola)

Page 1
1
Motorola Bipolar Power Transistor Device Data
   
The MJ15001 and MJ15002 are EpiBase power transistors designed for h igh
power audio, disk head positioners and other linear applications.
High Safe Operating Area (100% Tested) — 200 W @ 40 V 50 W @ 100 V
High DC Current Gain —
hFE = 25 (Min) @ IC = 4 Adc
MAXIMUM RATINGS
Rating
Symbol
ОООООООО
ОООООООО
ОООООООО
Value
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Unit
Collector–Emitter Voltage
V
CEO
ОООООООО
ОООООООО
ОООООООО
140
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector–Base Voltage
V
CBO
ОООООООО
ОООООООО
ОООООООО
140
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Emitter–Base Voltage
V
EBO
ОООООООО
ОООООООО
ОООООООО
5
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector Current — Continuous
I
C
ОООООООО
ОООООООО
ОООООООО
15
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Adc
Base Current — Continuous
I
B
ОООООООО
ОООООООО
ОООООООО
5
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Adc
Emitter Current — Continuous
I
E
ОООООООО
ОООООООО
ОООООООО
20
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
P
D
ОООООООО
ОООООООО
ОООООООО
ОООООООО
200
1.14
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Watts W/_C
Operating and Storage Junction Temperature Range
TJ, T
stg
ОООООООО
ОООООООО
ОООООООО
–65 to +200
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
ОООООООО
ОООООООО
ОООООООО
Max
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Unit
Thermal Resistance, Junction to Case
R
θJC
ОООООООО
ОООООООО
ОООООООО
0.875
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C/W
Maximum Lead Temperature for Soldering Purposes:
1/16 from Case for v 10 seconds
T
L
ОООООООО
ОООООООО
ОООООООО
ОООООООО
265
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C

SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ15001/D
Motorola, Inc. 1995
 
15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
140 VOLTS
200 WATTS


CASE 1–07
TO–204AA
(TO–3)
Page 2
 
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Symbol
Min
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC, = 200 mAdc, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
CEO(sus)
140
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector Cutoff Current
(VCE = 140 Vdc, V
BE(off)
= 1.5 Vdc)
(VCE = 140 Vdc, V
BE(off)
= 1.5 Vdc, TC = 150_C)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
CEX
— —
100
2
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
µAdc
mAdc
Collector Cutoff Current
(VCE = 140 Vdc, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
CEO
250
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
µAdc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
EBO
100
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
µAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 40 Vdc, t = 1 s (non–repetitive)) (VCE = 100 Vdc, t = 1 s (non–repetitive))
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
S/b
5
0.5
— —
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 4 Adc, VCE = 2 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
h
FE
25
150
ÎÎÎ
ÎÎÎ
ÎÎÎ
Collector–Emitter Saturation Voltage
(IC = 4 Adc, IB = 0.4 Adc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
CE(sat)
1
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base–Emitter On Voltage
(IC = 4 Adc, VCE = 2 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
BE(on)
2
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f
test
= 0.5 MHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
f
T
2
ÎÎÎ
ÎÎÎ
ÎÎÎ
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f
test
= 1 MHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
C
ob
1000
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
pF
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2%.
I
C
, COLLECTOR CURRENT (AMP)
5
Figure 1. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5 7 10 200
10
2
2 3 50 70 10020 30
7
200
1
3
0.5
0.2
0.7
0.3
TC = 25
°
C
TJ = 200°C BONDING WIRE LIMITED THERMAL LIMITATION (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED V
CEO
There are two limitations on the power handling ability of a transistor: average junction temperature and second break­down. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa­tion than the curves indicate.
The data of Figure 1 is based on TJ
(pk)
= 200_C; TC is variable depending on conditions. At high case temper­atures, thermal limitations will reduce the power that can be handled to values less than the l imitations imposed by second breakdown.
Page 3
 
3
Motorola Bipolar Power Transistor Device Data
f
T
, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
IC, COLLECTOR CURRENT (AMP)
0.7 1 2 3 5 107 200.2 0.3 0.5
2
0.7 1 2 3 5 107 200.2 0.3 0.5
Figure 2. Capacitances
IC, COLLECTOR CURRENT (AMP)
2.0
1.6
1.2
0.4
0.8
0
0.7 1 2 3 5 107 20
IC, COLLECTOR CURRENT (AMP)VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Current–Gain — Bandwidth Product
Figure 4. DC Current Gain
700 500
1000
3 5 10 1502
300 200
100
70 50
30 20
7
IC, COLLECTOR CURRENT (AMP)
Figure 5. “On” Voltages
10
20 30 7050 1001.5
9 8
10
0.3 0.5 10.2
4 3 2
1
0.7
MJ15002 (PNP)
0
3 5 1070.1 2
7 6 5
IC, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5
TJ = 25°C
VBE @ VCE = 2 Vdc
V
CE(sat)
@ IC/IB = 10
V, VOLTAGE (VOLTS)
TJ = 100°C
25°C
100°C
2.0
1.6
1.2
0.4
0.8
0
0.7 1 2 3 5 107 200.2 0.3 0.5
TJ = 100°C
25°C
h
FE
, DC CURRENT GAIN
VCE = 2 Vdc
TJ = 25°C VCE = 10 V f
test
= 0.5 MHz
C
ib
MJ15001 (NPN)
TJ = 25°C
MJ15001 (NPN) MJ15002 (PNP)
h
FE
, DC CURRENT GAINV, VOLTAGE (VOLTS)
70 50
100
30 20
10
7 5
3 2
200
70 50
100
30 20
10
7 5
3
200
C, CAPACITANCE (pF)
C
ib
C
ob
C
ob
MJ15001 MJ15002
MJ15001 MJ15002
VCE = 2 Vdc
TJ = 100°C
25°C
VBE @ VCE = 2 Vdc
TJ = 25°C
100°C
V
CE(sat)
@ IC/IB = 10
TJ = 100°C
25°C
TYPICAL CHARACTERISTICS
Page 4
 
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO–204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 1.550 REF 39.37 REF B ––– 1.050 ––– 26.67 C 0.250 0.335 6.35 8.51 D 0.038 0.043 0.97 1.09 E 0.055 0.070 1.40 1.77 G 0.430 BSC 10.92 BSC H 0.215 BSC 5.46 BSC K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC N ––– 0.830 ––– 21.08 Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77
A
N
E
C
K
–T–
SEATING PLANE
2 PLD
M
Q
M
0.13 (0.005) Y
M
T
M
Y
M
0.13 (0.005) T
–Q–
–Y–
2
1
U
L
G
B
V
H
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
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MJ15001/D
*MJ15001/D*
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