Page 1
SIDE LOOK PACKAGE
PIN PHOTODIODE
MID-85H1C
Description Package Dimensions
RADIANT SENSITIVE AREA
(.890)
The MID-85H1C is a photodiode mounted in special
dark plastic package and suitable for the IRED
(850nm/880nm) Type.
Features
l High photo sensitivity
l Low junction capacitance
l High cut -off frequency
l Fast switching time
l Suitable for the IRED 850nm/880nm type
5.00
(.200)
6.60
4.00
(.160)
22.60 TYP.
16.00 MIN.
(.630)
1.00MIN.
(.040)
A
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.0 mm (.040") max.
3. Lead spacing is measured where the leads emerge from the package.
2.54
(.100)
(.260)
0.50 TYP.
(.020)
C
Unit: mm ( inches )
4.00
(.160)
Absolute Maximum Ratings
Parameter Maximum Rating Unit
Power Dissipation 100 mW
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Unity Opto Technology Co., Ltd.
@ TA=25oC
-55oC to +100oC
-55oC to +100oC
260oC for 5 seconds
02/04/2002
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MID-85H1C
Optical-Electrical Characteristics
0
20
80
100
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Reverse Break Down Voltage
IR=0.1mA V
Ee=0
Reverse Dark Current
VR=10V I
Ee=0
Open Circuit Voltage λ=850nm
2
2
Rise Time
Fall Time
Light Current
Total Capacitance
Ee=0.1mW/cm
VR =10V λ=850nm
RL=50Ω
VR =5V, λ=850nm I
Ee=0.1mW/cm
VR =3V, f=1MHz C
Ee=0
Typical Optical-Electrical Characteristic Curves
4000
@ TA=25oC
(BR)R
V
D
OC
30 V
30 nA
350 mV
Tr 50 nsec
Tf 50
L
T
9 µA
25 pF
3000
2000
1000
Dark Current IR - pA
0
0 5 10 15 20
Reverse Volatage - V
R
FIG.1 DARK CURRENT VS REVERSE VOLTAGE
TEMP=25oC, Ee=0 mW/cm
200
150
100
50
Total Power Dissipation mW
0
0 20 40 60 80 100
2
Ambient Temperature -oC
FIG.3 TOTAL POWER DISSIPATION
VS. AMBIENT TEMPERATURE
60
Capacitance C - pF
Reverse Voltage- V
R
FIG.2 CAPACITANCE VS. REVERSE VOLTAGE
F=1MHz ; Ee=0mW/cm
1000
100
10
1
2
Dark Current IR - nA
0.1
0 20 40 60 80 100
Ambient Temperature - oC
FIG.4 DARK CURRENT VS AMBIENT TEMPERATURE
VR=10V, Ee=0 mw/cm
2
Unity Opto Technology Co., Ltd.
02/04/2002
Page 3
MID-85H1C
Typical Optical-Electrical Characteristic Curves
0° 10° 20°
40°
50°
90°
70°
80°
0.1110
100
1000
100
80
60
40
20
Relative Spectral Sensitivity
0
700 800 900 1000 1100 1200
Wavelength-nm
FIG.5 RELATIVE SPECTRAL SENSITIVITY
VS. WAVELENGTH
30°
1.0
0.9
Relative Sensitivity
0.8
60°
A
µ
Photocurrnet Ip -
0.01 0.1 1 10
Irradiance Ee (mW/cm2)
FIG.6 PHOTOCURRENT VS.
IRRADIANCE = 850 nm
0.5 0.3 0.1 0.2 0.4 0.6
FIG.7 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002
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