Page 1
© 2000 IXYS All rights reserved
1 - 4
Symbol Conditions Maximum Ratings
V
CES
TJ= 25°C to 150°C 1200 V
V
CGR
TJ= 25°C to 150°C; RGE = 20 kW 1200 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
TC= 25°C 670 A
I
C80
TC= 80°C 460 A
I
CM
TC= 80°C, tp = 1 ms
920 A
t
SC
VGE = ±15 V, VCE = V
CES
, TJ = 125°C10ms
(SCSOA) RG= 1.8 W, non repetitive
RBSOA VGE= ±15 V, TJ = 125°C, RG = 1.8 W ICM = 800 A
Clamped inductive load, L = 100 mHV
CEK
< V
CES
P
tot IGBT
TC= 25°C 2750 W
T
J
150 °C
T
stg
-40 ... +150 °C
V
ISOL
50/60 Hz, RMS t = 1 min 4000 V~
I
ISOL
£ 1 mA t = 1 s 4800 V~
Insulating material: Al2O
3
M
d
Mounting torque (module) 2.25-2.75 Nm
20-25 lb.in.
(teminals) 2.5-3.7 Nm
22-33 lb.in.
d
S
Creepage distance on surface 1 4 mm
d
A
Strike distance through air 9.6 mm
a Max. allowable acceleration 50 m/s
2
Weight Typical 250 g
8.8 oz.
Data according to a single IGBT/FRED unless otherwise stated.
I
C25
= 670 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.3 V
Features
●
NPT IGBT technology
●
low saturation voltage
●
low switching losses
●
switching frequency up to 30 kHz
●
square RBSOA, no latch up
●
high short circuit capability
●
positive temperature coefficient for
easy parallelling
●
MOS input, voltage controlled
●
ultra fast free wheeling diodes
●
package with DCB ceramic base plate
●
isolation voltage 4800 V
●
UL registered E72873
Advantages
●
space and weight savings
●
reduced protection circuits
Typical Applications
●
AC and DC motor control
●
power supplies
●
welding inverters
Short Circuit SOA Capability
Square RBSOA
MID 550-12 A4
MDI 550-12 A4
8
9
1
2
3
11
10
E 72873
2
1
3
10
11
MID
2
1
3
9
8
MDI
IGBT Modules
Additional current limitation by external leads
030
Page 2
© 2000 IXYS All rights reserved
2 - 4
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
(BR)CES
VGE = 0 V 1200 V
V
GE(th)
IC = 16 mA, VCE = V
GE
4.5 6.5 V
I
CES
VCE= V
CES
TJ = 25°C21mA
TJ = 125°C30mA
I
GES
VCE= 0 V, VGE = ±20 V 1.6 µA
V
CE(sat)
IC = 400 A, VGE = 15 V 2.3 2.8 V
C
ies
26 nF
C
oes
VCE = 25 V, VGE = 0 V, f = 1 MHz 4 nF
C
res
2nF
t
d(on)
100 ns
t
r
60 ns
t
d(off)
600 ns
t
f
90 ns
E
on
64 mJ
E
off
59 mJ
R
thJC
0.05 K/W
R
thJS
with heatsink compound 0.09 K/W
Free Wheeling Diode (FRED) Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
F
IF = 400 A, VGE = 0 V 2.4 2.6 V
IF = 400 A, VGE = 0 V, TJ = 125°C 1.9 2.0 V
I
F
TC = 25°C
750 A
TC = 80°C 460 A
I
RM
IF = 400 A, VGE = 0 V, -diF/dt = 3000 A/ms 300 A
t
rr
TJ = 125°C, VR = 600 V 200 ns
R
thJC
0.09 K/W
R
thJS
0.18 K/W
Anti Parallel Diode (FRED) Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
F
IF = 100 A, VGE = 0 V 2.4 2.6 V
IF = 100 A, VGE = 0 V, TJ = 125°C 1.9 2.0 V
I
F
TC = 25°C 150 A
TC = 80°C95A
I
RM
IF = 100 A, VGE = 0 V, -diF/dt = 600 A/ms62A
t
rr
TJ = 125°C, VR = 600 V 200 ns
R
thJC
0.45 K/W
R
thJS
0.9 K/W
Inductive load, TJ = 125°C
I
C
= 400 A, VGE = ±15 V
VCE = 600 V, RG = 1.8 W
MID 550-12 A4
MDI 550-12 A4
Dimensions in mm (1 mm = 0.0394")
Additional current limitation by external leads
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.3 V; R0 = 3.2 mW
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.3 V; R0 = 1.5 mW
Thermal Response
IGBT (typ.)
C
th1
= 0.90 J/K; R
th1
= 0.049 K/W
C
th2
= 2.07 J/K; R
th2
= 0.001 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.71 J/K; R
th1
= 0.090 K/W
C
th2
= 1.30 J/K; R
th2
= 0.002 K/W
Page 3
© 2000 IXYS All rights reserved
3 - 4
0 200 400 600 800 1000
0
40
80
120
0
100
200
300
01234
0
200
400
600
800
1000
1200
1400
1600
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
100
200
300
400
500
600
700
800
900
0 500 1000 1500 2000
0
5
10
15
20
0.00.51.01.52.02.53.03.5
0
100
200
300
400
500
600
700
800
900
13V
11V
TJ = 25°C
VGE=17V
T
J
= 125°C
VCE = 600V
I
C
= 400A
15V
567891011
0
100
200
300
400
500
600
700
800
13V
11V
VGE=17V
15V
VCE = 20V
T
J
= 25°C
T
J
= 25°C
T
J
= 125°C
9V
9V
V
CE
V
A
I
C
V
CE
A
I
C
V
V
V
V
GE
V
F
A
I
C
A
I
F
nC
Q
G
-di/dt
V
V
GE
A
I
RM
t
rr
ns
A/ms
550-12
TJ = 125°C
V
R
= 600V
I
F
= 400A
I
RM
t
rr
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of
free wheeling diode
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
MID 550-12 A4
MDI 550-12 A4
Page 4
© 2000 IXYS All rights reserved
4 - 4
0 200 400 600 800 1000
0
40
80
120
160
0
40
80
120
160
0 200 400 600 800 1000
0
40
80
120
160
0
200
400
600
800
0.00001 0.0001 0.001 0.01 0.1 1
0.00001
0.0001
0.001
0.01
0.1
02468101214
0
20
40
60
80
100
0
400
800
1200
1600
2000
02468101214
0
40
80
120
160
200
0
80
160
240
320
400
single pulse
VCE = 600V
V
GE
= ±15V
R
G
= 1.8
W
TJ = 125°C
550-12
V
CE
= 600V
V
GE
= ±15V
I
C
= 400A
T
J
= 125°C
0 200 400 600 800 1000 1200
0
200
400
600
800
1000
RG = 1.8
W
T
J
= 125°C
V
CEK
< V
CES
VCE = 600V
V
GE
= ±15V
R
G
= 1.8
W
TJ = 125°C
E
on
V
CE
= 600V
V
GE
= ±15V
I
C
= 400A
T
J
= 125°C
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
mJ
E
off
mJ
E
on
ns
t
ns
t
R
G
W
R
G
W
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
K/W
Z
thJC
IGBT
diode
I
CM
V
A
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
MID 550-12 A4
MDI 550-12 A4
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