Page 1
MII 300-12 A4 MID 300-12 A4
MDI 300-12 A4
IGBT Modules
Short Circuit SOA Capability
Square RBSOA
MII
3
11
10
8
9
1
11
2
10
Symbol Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C80
I
CM
t
SC
TJ= 25°C to 150°C 1200 V
TJ= 25°C to 150°C; RGE = 20 kW 1200 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 330 A
TC= 80°C 220 A
TC= 80°C, tp = 1 ms 440 A
VGE = ±15 V, VCE = V
, TJ = 125°C10ms
CES
(SCSOA) RG= 3.3 W, non repetitive
RBSOA VGE= ±15 V, TJ = 125°C, RG = 3.3 W ICM = 400 A
Clamped inductive load, L = 100 mHV
P
tot
T
J
T
stg
V
ISOL
M
d
TC= 25°C 1380 W
50/60 Hz, RMS t = 1 min 4000 V~
I
£ 1 mA t = 1 s 4800 V~
ISOL
Insulating material: Al2O
3
Mounting torque (module) 2.25-2.75 Nm
(teminals) 2.5-3.7 Nm
d
S
d
A
Creepage distance on surface 1 0 mm
Strike distance through air 9.6 mm
a Max. allowable acceleration 50 m/s
Weight Typical 250 g
MID
3
1
2
< V
CEK
-40 ... +150 °C
MDI
8
9
CES
150 °C
20-25 lb.in.
22-33 lb.in.
8.8 oz.
I
C25
V
CES
V
CE(sat) typ.
3
1
2
= 330 A
= 1200 V
= 2.2 V
1
3
2
Features
●
NPT IGBT technology
●
low saturation voltage
●
low switching losses
●
switching frequency up to 30 kHz
●
square RBSOA, no latch up
●
high short circuit capability
●
positive temperature coefficient for
easy parallelling
●
MOS input, voltage controlled
●
ultra fast free wheeling diodes
●
package with DCB ceramic base plate
●
isolation voltage 4800 V
●
UL registered E72873
Advantages
●
space and weight savings
●
reduced protection circuits
Typical Applications
●
AC and DC motor control
●
AC servo and robot drives
●
power supplies
●
welding inverters
2
11
10
9
E 72873
8
Data according to a single IGBT/FRED unless otherwise stated.
© 2000 IXYS All rights reserved
030
1 - 4
Page 2
MII 300-12 A4 MID 300-12 A4
MDI 300-12 A4
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
(BR)CES
V
GE(th)
I
CES
VGE = 0 V 1200 V
IC = 8 mA, VCE = V
VCE= V
CES
GE
TJ = 25°C13mA
4.5 6.5 V
TJ = 125°C20mA
I
GES
V
C
C
C
t
d(on)
t
r
t
d(off)
t
f
E
E
R
R
CE(sat)
ies
oes
res
on
off
thJC
thJS
VCE= 0 V, VGE = ±20 V ±800 nA
IC = 200 A, VGE = 15 V 2.2 2.7 V
13 nF
VCE = 25 V, VGE = 0 V, f = 1 MHz 2 nF
1nF
100 ns
Inductive load, TJ = 125°C
60 ns
600 ns
= 200 A, VGE = ±15 V
I
C
VCE = 600 V, RG = 3.3 W
90 ns
32 mJ
29 mJ
0.09 K/W
with heatsink compound 0.18 K/W
Dimensions in mm (1 mm = 0.0394")
Reverse Diode (FRED) Characteristic Values
= 25°C, unless otherwise specified)
(T
J
min. typ. max.
V
F
IF = 200 A, VGE = 0 V, 2.2 2.5 V
IF = 200 A, VGE = 0 V, TJ = 125°C 1.7 2.3 V
I
F
TC = 25°C 450 A
TC = 80°C 280 A
I
RM
t
rr
R
thJC
R
thJS
IF = 200 A, VGE = 0 V, -diF/dt = 1800 A/ms 180 A
TJ = 125°C, VR = 600 V 200 ns
0.15 K/W
with heatsink compound 0.3 K/W
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
Free Wheeling Diode (typ. at TJ = 125°C)
Thermal Response
IGBT (typ.)
V0 = 1.3 V; R0 = 6.2 mW
V0 = 1.3 V; R0 = 2.4 mW
C
= 0.50 J/K; R
th1
C
= 1.16 J/K; R
th2
= 0.088 K/W
th1
= 0.002 K/W
th2
© 2000 IXYS All rights reserved
Free Wheeling Diode (typ.)
C
= 0.44 J/K; R
th1
C
= 0.80 J/K; R
th2
= 0.146 K/W
th1
= 0.003 K/W
th2
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Page 3
MII 300-12 A4 MID 300-12 A4
MDI 300-12 A4
500
TJ = 25°C
A
400
I
C
300
200
100
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
500
VCE = 20V
A
T
= 25°C
J
400
I
C
300
200
100
0
567891011
V
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of
500
T
= 125°C
VGE=17V
15V
13V
11V
J
A
400
I
C
300
VGE=17V
15V
13V
11V
200
9V
100
9V
0
V
CE
0.00.51.01.52.02.53.03.5
V
CE
V
900
A
800
700
I
F
600
= 125°C
T
J
TJ = 25°C
500
400
300
200
100
0
V
GE
01234
V
V
F
free wheeling diode
20
VCE = 600V
V
= 200A
I
C
15
V
GE
10
5
0
0 200 400 600 800 1000
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of
© 2000 IXYS All rights reserved
120
A
I
RM
t
rr
80
TJ = 125°C
= 600V
40
I
RM
V
R
I
= 200A
F
0
Q
nC
G
0 200 400 600 800 1000
A/ms
-di/dt
300-12
300
ns
200
100
0
t
rr
free wheeling diode
3 - 4
Page 4
MII 300-12 A4 MID 300-12 A4
MDI 300-12 A4
80
mJ
60
E
on
40
20
0
0 100 200 300 400 500
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
100
V
= 600V
CE
mJ
V
= ±15V
GE
80
= 200A
I
60
40
C
= 125°C
T
J
E
on
I
C
E
on
t
d(on)
t
r
VCE = 600V
= ±15V
V
GE
R
= 3.3
W
G
TJ = 125°C
A
E
t
d(on)
t
160
ns
120
t
80
40
0
80
mJ
60
E
off
40
20
0
t
d(off)
E
off
VCE = 600V
V
= ±15V
GE
= 3.3
R
G
TJ = 125°C
t
f
0 100 200 300 400 500
I
C
400
on
ns
320
t
240
r
160
50
V
= 600V
CE
mJ
V
= ±15V
GE
40
= 200A
I
E
off
C
= 125°C
T
J
30
20
800
ns
600
t
400
W
200
0
A
2000
ns
E
off
1600
t
d(off)
t
1200
800
20
0
0 4 8 12 16 20 24 28
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
500
A
400
I
CM
300
RG = 3.3
W
T
200
= 125°C
J
V
CEK
< V
CES
100
0
0 200 400 600 800 1000 1200
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
80
0
W
R
G
10
0
0 4 8 1216202428
R
G
400
t
f
0
W
1
K/W
0.1
Z
thJC
0.01
diode
IGBT
0.001
0.0001
0.00001
V
V
CE
0.00001 0.0001 0.001 0.01 0.1 1
single pulse
300-12
s
t
© 2000 IXYS All rights reserved
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