Datasheet MII200-12A4, MID200-12A4, MDI200-12A4 Datasheet (IXYS)

© 2000 IXYS All rights reserved

1 - 4

IGBT Modules

Short Circuit SOA Capability
Square RBSOA

MII 200-12 A4 MID 200-12 A4

MDI 200-12 A4

Symbol Conditions Maximum Ratings
V

CES

TJ= 25°C to 150°C 1200 V

V

CGR

TJ= 25°C to 150°C; RGE = 20 kW 1200 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

TC= 25°C 270 A

I

C80

TC= 80°C 180 A

I

CM

TC= 80°C, tp = 1 ms 360 A

t

SC

VGE = ±15 V, VCE = V

CES

, TJ = 125°C10ms

(SCSOA) RG= 6.8 W, non repetitive
RBSOA VGE= ±15 V, TJ = 125°C, RG = 6.8 W ICM = 360 A

Clamped inductive load, L = 100 mHV

CEK

< V

CES

P

tot

TC= 25°C 1130 W

T

J

150 °C

T

stg

-40 ... +150 °C

V

ISOL

50/60 Hz, RMS t = 1 min 4000 V~
I

ISOL

£ 1 mA t = 1 s 4800 V~

Insulating material: Al2O

3

M

d

Mounting torque (module) 2.25-2.75 Nm

20-25 lb.in.

(teminals) 2.5-3.7 Nm

22-33 lb.in.

d

S

Creepage distance on surface 1 0 mm

d

A

Strike distance through air 9.6 mm

a Max. allowable acceleration 50 m/s

2

Weight Typical 250 g

8.8 oz.

Data according to a single IGBT/FRED unless otherwise stated.

8

9

1

2

3

11

10

10

11

9

8

2

1

3

MII

2

1

3

10

11

MID

2

1

3

9

8

MDI

E 72873

I

C25

= 270 A

V

CES

= 1200 V

V

CE(sat) typ.

= 2.2 V

Features

●

NPT IGBT technology

●

low saturation voltage

●

low switching losses

●

switching frequency up to 30 kHz

●

square RBSOA, no latch up

●

high short circuit capability

●

positive temperature coefficient for
easy parallelling

●

MOS input, voltage controlled

●

ultra fast free wheeling diodes

●

package with DCB ceramic base plate

●

isolation voltage 4800 V

●

UL registered E72873

Advantages

●

space and weight savings

●

reduced protection circuits

Typical Applications

●

AC and DC motor control

●

AC servo and robot drives

●

power supplies

●

welding inverters

030

© 2000 IXYS All rights reserved

2 - 4

MII 200-12 A4 MID 200-12 A4

MDI 200-12 A4

Symbol Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

V

(BR)CES

VGE = 0 V 1200 V

V

GE(th)

IC = 6 mA, VCE = V

GE

4.5 6.5 V

I

CES

VCE= V

CES

TJ = 25°C10mA
TJ = 125°C15mA

I

GES

VCE= 0 V, VGE = ±20 V ±700 nA

V

CE(sat)

IC = 150 A, VGE = 15 V 2.2 2.7 V

C

ies

11 nF

C

oes

VCE = 25 V, VGE = 0 V, f = 1 MHz 1.5 nF

C

res

0.65 nF

t

d(on)

100 ns

t

r

50 ns

t

d(off)

650 ns

t

f

50 ns

E

on

24.2 mJ

E

off

21 mJ

R

thJC

0.11 K/W

R

thJS

with heatsink compound 0.22 K/W

Reverse Diode (FRED) Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

V

F

IF = 150 A, VGE = 0 V, 2.2 2.5 V
IF = 150 A, VGE = 0 V, TJ = 125°C 1.8 1.9 V

I

F

TC = 25°C 300 A
TC = 80°C 200 A

I

RM

IF = 150 A, VGE = 0 V, -diF/dt = 1200 A/ms 125 A

t

rr

TJ = 125°C, VR = 600 V 200 ns

R

thJC

0.23 K/W

R

thJS

with heatsink compound 0.45 K/W

Inductive load, TJ = 125°C

I

C

= 150 A, VGE = ±15 V

VCE = 600 V, RG = 6.8 W

Dimensions in mm (1 mm = 0.0394")

Equivalent Circuits for Simulation

Conduction

IGBT (typ. at VGE = 15 V; TJ = 125°C)

V0 = 1.5 V; R0 = 7.0 mW

Free Wheeling Diode (typ. at TJ = 125°C)

V0 = 1.3 V; R0 = 3.4 mW

Thermal Response

IGBT (typ.)

C

th1

= 0.40 J/K; R

th1

= 0.110 K/W

C

th2

= 0.93 J/K; R

th2

= 0.003 K/W

Free Wheeling Diode (typ.)

C

th1

= 0.28 J/K; R

th1

= 0.226 K/W

C

th2

= 0.51 J/K; R

th2

= 0.005 K/W

© 2000 IXYS All rights reserved

3 - 4

0 200 400 600 800 1000

0

20

40

60

80

100

0

50

100

150

200

250

01234

0

100

200

300

400

500

600

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

50

100

150

200

250

300

350

0 200 400 600 800

0

5

10

15

20

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

0

50

100

150

200

250

300

350

13V

11V

TJ = 25°C

VGE=17V

T

J

= 125°C

VCE = 600V
I

C

= 150A

15V

567891011

0

50

100

150

200

250

300

350

13V
11V

VGE=17V

15V

VCE = 20V
T

J

= 25°C

9V

9V

V

CE

V

A

I

C

V

CE

A

I

C

V

V

V

V

GE

V

F

A

I

C

A

I

F

nC

Q

G

-di/dt

V

V

GE

A

I

RM

t

rr

ns

A/ms

200-12

TJ = 125°C
V

R

= 600V

I

F

= 150A

TJ = 25°C

T

J

= 125°C

I

RM

t

rr

Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics

Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of

free wheeling diode

Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of

free wheeling diode

MII 200-12 A4 MID 200-12 A4

MDI 200-12 A4

© 2000 IXYS All rights reserved

4 - 4

Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching

times versus collector current times versus collector current

Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching

times versus gate resistor times versus gate resistor

Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance

RBSOA

0 100 200 300

0

30

60

90

0

40

80

120

0 100 200 300

0

20

40

60

80

0

200

400

600

800

0.00001 0.0001 0.001 0.01 0.1 1

0.00001

0.0001

0.001

0.01

0.1

1

0 4 8 1216202428

0

10

20

30

40

50

0

400

800

1200

1600

2000

0 4 8 12 16 20 24 28

0

10

20

30

40

50

0

40

80

120

160

200

single pulse

VCE = 600V
V

GE

= ±15V

R

G

= 6.8

W

TJ = 125°C

200-12

V

CE

= 600V

V

GE

= ±15V

I

C

= 150A

T

J

= 125°C

0 200 400 600 800 1000 1200

0

100

200

300

400

RG = 6.8

W

T

J

= 125°C

V

CEK

< V

CES

VCE = 600V
V

GE

= ±15V

R

G

= 6.8

W

TJ = 125°C

E

on

V

CE

= 600V

V

GE

= ±15V

I

C

= 150A

T

J

= 125°C

t

d(on)

t

r

E

off

t

d(off)

t

f

E

on

t

d(on)

t

r

E

off

t

d(off)

t

f

I

C

A

I

C

A

mJ

E

off

mJ

E

on

ns

t

ns

t

R

G

W

R

G

W

V

CE

t

s

mJ

E

on

mJ

E

off

ns

t

ns

t

I

CM

K/W

Z

thJC

IGBT

diode

V

A

MII 200-12 A4 MID 200-12 A4

MDI 200-12 A4