Datasheet MIC5011 Datasheet (MICREL)

MIC5011 Micrel

MIC5011

Minimum Parts High- or Low-Side MOSFET Driver

General Description

The MIC5011 is the “minimum parts count” member of the
Micrel MIC501X driver family. These ICs are designed to
drive the gate of an N-channel power MOSFET above the
supply rail in high-side power switch applications. The 8-pin
MIC5011 is extremely easy to use, requiring only a power
FET and nominal supply decoupling to implement either a
high- or low-side switch.

The MIC5011 charges a 1nF load in 60µs typical with no
external components. Faster switching is achieved by add­ing two 1nF charge pump capacitors. Operation down to

4.75V allows the MIC5011 to drive standard MOSFETs in
5V low-side applications by boosting the gate voltage

Features

• 4.75V to 32V operation

• Less than 1µA standby current in the “off” state

• Internal charge pump to drive the gate of an N-channel
power FET above supply

• Available in small outline SOIC packages

• Internal zener clamp for gate protection

• Minimum external parts count

• Can be used to boost drive to low-side power FETs
operating on logic supplies

•25µs typical turn-on time with optional external
capacitors

• Implements high- or low-side drivers

above the logic supply. In addition, multiple paralleled
MOSFETs can be driven by a single MIC5011 for ultra-high
current applications.

Other members of the Micrel driver family include the
MIC5012 dual driver and MIC5013 protected 8-pin driver.

For new designs, Micrel recommends the pin-compatible

Applications

• Lamp drivers

• Relay and solenoid drivers

• Heater switching

• Power bus switching

MIC5014 MOSFET driver.

Typical Applications Ordering Information

ON

10µF

Control Input

OFF

ON

Control Input

OFF

+

1
2
3
4

V+
Input
Source
Gnd

MIC5011

C1

Com

C2

Gate

Figure 1. High Side Driver

10µF

+

1

V+

2

Input

3

Source

4

Gnd

MIC5011

C1

Com

C2

Gate

Part Number Temp. Range Package

14.4V

8
7
6
5

8
7
6
5

48V5V

IRF531

#6014

100W
Heater

IRF530

MIC5011BN –40°C to +85°C 8-pin Plastic DIP
MIC5011BM –40°C to +85°C 8-pin SOIC

Note: The MIC5011 is ESD sensitive.

Protected under one or more of the following Micrel patents:

patent #4,951,101; patent #4,914,546

Figure 2. Low Side Driver

Micrel, Inc. • 1849 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 [phone] • fax + 1 [phone] • http://www.micrel.com

July 2000 1 MIC5011

MIC5011 Micrel

e1234

Absolute Maximum Ratings (Note 1, 2)

Supply Voltage (V
Input Voltage, Pin 2 –10V to V
Source Voltage, Pin 3 –10V to V
Current into Pin 3 50mA
Gate Voltage, Pin 5 –1V to 50V
Junction Temperature 150°C

+

), Pin 1 –0.5V to 36V

Pin Description (Refer to Typical Applications)

Pin Number Pin Name Pin Function

1V

2 Input Turns on power MOSFET when taken above threshold (3.5V typical).

3 Source Connects to source lead of power FET and is the return for the gate clamp

4 Ground
5 Gate Drives and clamps the gate of the power FET. Will be clamped to approxi-

6, 7, 8 C2, Com, C1 Optional 1nF capacitors reduce gate turn-on time; C2 has dominant effect.

+

Supply; must be decoupled to isolate from large transients caused by the
power FET drain. 10µF is recommended close to pins 1 and 4.

Requires <1 µA to switch.

zener. Can safely swing to –10V when turning off inductive loads.

mately –0.7V by an internal diode when turning off inductive loads.

Operating Ratings (Notes 1, 2)

Power Dissipation 1.25W

+

θ

(Plastic DIP) 100°C/W

JA

+

θJA (SOIC) 170°C/W
Ambient Temperature: B version –40°C to +85°C
Storage Temperature –65°C to +150°C
Lead Temperature 260°C
(Soldering, 10 seconds)
Supply Voltage (V+), Pin 1 4.75V to 32V high side

4.75V to 15V low side

Pin Configuration

MIC5011

V+
Input

Source
Gnd

C1

Com

C2

Gat

8
7
6
5

MIC5011 2 July 2000

MIC5011 Micrel

e

2

3

4

Electrical Characteristics (Note 3) Test circuit. T

= –55°C to +125°C, V+ = 15V, all switches open, unless

A

otherwise specified.

Parameter Conditions Min Typical Max Units

Supply Current, I

1

Logic Input Voltage V+ = 4.75V Adjust VIN for V

Logic Input Current, I

2

Input Capacitance Pin 2 5 pF
Gate Drive, V

GATE

Zener Clamp, S2 closed, VIN = 5V V+ = 15V, VS = 15V 11 12.5 15 V
V

– V

GATE

Gate Turn-on Time, t

SOURCE

ON

(Note 4) for V
Gate Turn-off Time, t

Note 1 Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when

operating the device beyond its specified Operating Ratings.

Note 2 The MIC5011 is ESD sensitive.
Note 3 Minimum and maximum Electrical Characteristics are 100% tested at TA = 25°C and TA = 85°C, and 100% guaranteed over the entire

range. Typicals are characterized at 25°C and represent the most likely parametric norm.

Note 4 Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster—see

Applications Information. Maximum value of switching speed seen at 125°C, units operated at room temperature will reflect the typical

values shown.

OFF

V+ = 32V VIN = 0V, S2 closed 0.1 10 µA

VIN = V+ = 32V 8 20 mA

V+ = 5V VIN = 5V, S2 closed 1.6 4 mA

low 2 V

GATE

Adjust VIN for V

V+ = 15V Adjust VIN for V

high 4.5 V

GATE

high 5.0 V

GATE

V+ = 32V VIN = 0V –1 µA

VIN = 32V 1 µA

S1, S2 closed, V+ = 4.75V, I
VS = V+, VIN = 5V V+ = 15V, I

= 0, VIN = 4.5V 7 10 V

GATE

= 100µA, VIN = 5V 24 27 V

GATE

V+ = 32V, VS = 32V 11 13 16 V

VIN switched from 0 to 5V; measure time 25 50 µs

to reach 20V

GATE

VIN switched from 5 to 0V; measure time 4 10 µs
for V

to reach 1V

GATE

Test Circuit

V+

+

1µF

V

IN

500Ω

1W

S2

VS

July 2000 3 MIC5011

1

V+

Source
Gnd

Input

MIC5011

Com

Gat

C1

C2

8

1nF

7

S1

V

GATE

I5

1nF

6
5

1nF

MIC5011 Micrel

Typical Characteristics (Continued)

DC Gate Voltage

Supply Current

12

above Supply

14

10

8

6

4

2

SUPPLY CURRENT (mA)

0

0 5 10 15 20 25 30 35

SUPPLY VOLTAGE (V)

High-side Turn-on Time*

350
300

250
200

C =1 nF

GATE

12
10

8
6

VGATE – V+ (V)

4
2

0

0 3 6 9 12 15

SUPPLY VOLTAGE (V)

High-side Turn-on Time*

140
120

C =1 nF

100

80

GATE

C2=1 nF

150
100

TURN-ON TIME (µS)

50

0

03691215

SUPPLY VOLTAGE (V)

High-side Turn-on Time*

3.5

3.0

2.5

2.0

1.5

1.0

TURN-ON TIME (mS)

0.5

C =10 nF

GATE

60
40

TURN-ON TIME (µS)

20

0

03691215

SUPPLY VOLTAGE (V)

High-side Turn-on Time*

1.4

1.2
C =10 nF

1.0

0.8

0.6

0.4

TURN-ON TIME (mS)

0.2

GATE

C2=1 nF

0

03691215

SUPPLY VOLTAGE (V)

* Time for gate to reach V+ + 5V in test circuit with VS = V+ – 5V.

0

03691215

SUPPLY VOLTAGE (V)

MIC5011 4 July 2000

MIC5011 Micrel

0.75

1.0

1.25

1.5

1.75

2.0

0255075100

125

DIE TEMPERATURE (°C)

NORMALIZED TURN-ON TIME

Typical Characteristics (Continued)

Low-side Turn-on Time
for Gate = 5V

1000

300

100

30
10

C =1 nF

GATE

TURN-ON TIME (µS)

3

1

03691215

C =10 nF

GATE

SUPPLY VOLTAGE (V)

Low-side Turn-on Time
for Gate = 10V

3000

C =10 nF

1000

300

GATE

Low-side Turn-on Time
for Gate = 5V

1000

300

100

30
10

C =1 nF

TURN-ON TIME (µS)

GATE

3

1

03691215

SUPPLY VOLTAGE (V)

C2=1 nF

C =10 nF

GATE

Low-side Turn-on Time
for Gate = 10V

3000

1000

300

C2=1 nF

C =10 nF

GATE

100

C =1 nF

30

TURN-ON TIME (µS)

10

3

GATE

03691215

SUPPLY VOLTAGE (V)

Turn-off Time

50

C =10 nF

40

30

20

TURN-OFF TIME (µS)

10

GATE

C =1 nF

GATE

100

30

TURN-ON TIME (µS)

10

C =1 nF

GATE

3

03691215

SUPPLY VOLTAGE (V)

Turn-on Time

0

July 2000 5 MIC5011

03691215

SUPPLY VOLTAGE (V)

0.5
–25

MIC5011 Micrel

Charge Pump
Output Current

250

V =V

GATE

200

150

100

50

CHARGE-PUMP CURRENT (µA)

0

0 5 10 15 20 25 30

SUPPLY VOLTAGE (V)

+

V =V +5V

GATE

+

VS=V –5V

Charge Pump
Output Current

1.0

0.8

0.6

+

0.4

0.2

CHARGE-PUMP CURRENT (mA)

0

V =V

GATE

0 5 10 15 20 25 30

SUPPLY VOLTAGE (V)

+

V =V +5V

GATE

C2=1 nF

+

VS=V –5V

+

Block Diagram

Input

Ground

4

2

V+

1

LOGIC

C1 Com C2

Applications Information

Functional Description (Refer to Block Diagram)

The MIC5011 functions are controlled via a logic block
connected to the input pin 2. When the input is low, all
functions are turned off for low standby current and the gate
of the power MOSFET is also held low through 500Ω to an
N-channel switch. When the input is taken above the turn­on threshold (3.5V typical), the N-channel switch turns off
and the charge pump is turned on to charge the gate of the
power FET.

678

MIC5011

CHARGE

PUMP

500Ω

The charge pump incorporates a 100kHz oscillator and on­chip pump capacitors capable of charging 1nF to 5V above
supply in 60µs typical. With the addition of 1nF capacitors
at C1 and C2, the turn-on time is reduced to 25µs typical
(see Figure 3). The charge pump is capable of pumping the
gate up to over twice the supply voltage. For this reason, a
zener clamp (12.5V typical) is provided between the gate
pin 5 and source pin 3 to prevent exceeding the VGS rating
of the MOSFET at high supplies.

5 Gate

12.5V
3

Source

MIC5011 6 July 2000

MIC5011 Micrel

Input

Source

Gate

1
2
3
4

8

MIC5011

7
6
5

V+

Gnd

C1

Com

C2

+

10µF

Control Input

IRF531

14.4V

Figure 3. High Side Driver with
External Charge Pump Capacitors

ON

OFF

LOAD

1nF
1nF

Applications Information (Continued)

Construction Hints

High current pulse circuits demand equipment and assem­bly techniques that are more stringent than normal, low
current lab practices. The following are the sources of
pitfalls most often encountered during prototyping.

plies

: many bench power supplies have poor transient

Sup-

response. Circuits that are being pulse tested, or those that
operate by pulse-width modulation will produce strange
results when used with a supply that has poor ripple
rejection, or a peaked transient response. Always monitor
the power supply voltage that appears at the drain of a high­side driver (or the supply side of the load in a low-side driver)
with an oscilloscope. It is not uncommon to find bench
power supplies in the 1 kW class that overshoot or under­shoot by as much as 50% when pulse loaded. Not only will
the load current and voltage measurements be affected, but
it is possible to over-stress various components—espe-
cially electrolytic capacitors—with possibly catastrophic
results. A 10µF supply bypass capacitor at the chip is
recommended.

Residual Resistances:

Resistances in circuit connections
may also cause confusing results. For example, a circuit
may employ a 50mΩ power MOSFET for low drop, but
careless construction techniques could easily add 50 to
100mΩ resistance. Do not use a socket for the MOSFET. If
the MOSFET is a TO-220 type package, make high-current
drain connections to the tab. Wiring losses have a profound
effect on high-current circuits. A floating millivoltmeter can
identify connections that are contributing excess drop un­der load.

at ground potential. The MOSFET is forced into conduction,
and it dissipates the energy stored in the load inductance.
The MIC5011 source pin (3) is designed to withstand this
negative excursion without damage. External clamp diodes
are unnecessary.

Low-Side Driver (Figure 2). A key advantage of the low­side topology is that the load supply is limited only by the
MOSFET BVDSS rating. Clamping may be required to
protect the MOSFET drain terminal from inductive switch­ing transients. The MIC5011 supply should be limited to
15V in low-side topologies, otherwise a large current will be
forced through the gate clamp zener.

Low-side drivers constructed with the MIC501X family are
also fast; the MOSFET gate is driven to near supply
immediately when commanded ON. Typical circuits achieve
10V enhancement in 10µs or less on a 12 to 15V supply.

Modifying Switching Times (Figure 3). High-side switch­ing times can be improved by a factor of 2 or more by adding
external charge pump capacitors of 1nF each. In cost­sensitive applications, omit C1 (C2 has a dominant effect on
speed).

Do not add external capacitors to the MOSFET gate. Add a
resistor (1kΩ to 51kΩ) in series with the gate to slow down
the switching time.

Circuit Topologies

The MIC5011 is suited for use with standard MOSFETs in
high- or low-side driver applications. In addition, the MIC5011
works well in applications where, for faster switching times,
the supply is bootstrapped from the MOSFET source out­put. Low voltage, high-side drivers (such as shown in Figure

1) are the slowest; their speed is reflected in the gate turn­on time specifications. The fastest drivers are the low-side
and bootstrapped high-side types (Figures 2 and 4). Load
current switching times are often much faster than the time
to full gate enhancement, depending on the circuit type, the
MOSFET, and the load. Turn-off times are essentially the
same for all circuits (less than 10µs to VGS = 1V). The choice
of one topology over another is based on a combination of
considerations including speed, voltage, and desired sys­tem characteristics.

High-Side Driver (Figure 1). The high-side topology works
well down to V+ = 7V with standard MOSFETs. From 4.75
to 7V supply, a logic-level MOSFET can be substituted
since the MIC5011 will not reach 10V gate enhancement
(10V is the maximum rating for logic-compatible MOSFETs).

High-side drivers implemented with MIC501X drivers are
self-protected against inductive switching transients. Dur­ing turn-off an inductive load will force the MOSFET source
5V or more below ground, while the MIC5011 holds the gate

Bootstrapped High-Side Driver (Figure 4). The speed of
a high-side driver can be increased to better than 10µs by
bootstrapping the supply off of the MOSFET source. This
topology can be used where the load is pulse-width modu­lated (100Hz to 20kHz), or where it is energized continu­ously. The Schottky barrier diode prevents the MIC5011
supply pin from dropping more than 200mV below the drain
supply, and it also improves turn-on time on supplies of less
than 10V. Since the supply current in the “off” state is only
a small leakage, the 100nF bypass capacitor tends to
remain charged for several seconds after the MIC5011 is
turned off. In a PWM application the chip supply is sustained
at a higher potential than the system supply, which im­proves switching time.

July 2000 7 MIC5011

MIC5011 Micrel

Applications Information (Continued)

7 to 15V

1N5817

1N4001 (2)

+

10µF

8
7
6
5

IRF540

10mA

Control Input

100kΩ

4N35

15V

33pF

33kΩ

To MIC5011

Input

MPSA05

100kΩ

Control Input

1
2
3
4

V+
Input
Source
Gnd

100nF

MIC5011

C1

Com

C2

Gate

LOAD

Figure 4. Bootstrapped

High-Side Driver

Opto-Isolated Interface (Figure 5). Although the MIC5011

has no special input slew rate requirement, the lethargic
transitions provided by an opto-isolator may cause oscilla­tions on the rise and fall of the output. The circuit shown
accelerates the input transitions from a 4N35 opto-isolator
by adding hysteresis. Opto-isolators are used where the
control circuitry cannot share a common ground with the
MIC5011 and high-current power supply, or where the
control circuitry is located remotely. This implementation is
intrinsically safe; if the control line is severed the MIC5011
will turn OFF.

Industrial Switch (Figure 6). The most common manual
control for industrial loads is a push button on/off switch.
The “on” button is physically arranged in a recess so that in
a panic situation the “off” button, which extends out from the
control box, is more easily pressed. This circuit is compat-

1kΩ

Figure 5. Improved

Opto-Isolator Performance

ible with control boxes such as the CR2943 series (GE).
The circuit is configured so that if both switches close
simultaneously, the “off” button has precedence.

This application also illustrates how two (or more) MOSFETs
can be paralleled. This reduces the switch drop, and distrib­utes the switch dissipation into multiple packages.

High-Voltage Bootstrap (Figure 7). Although the MIC5011
is limited to operation on 4.75 to 32V supplies, a floating
bootstrap arrangement can be used to build a high-side
switch that operates on much higher voltages. The MIC5011
and MOSFET are configured as a low-side driver, but the
load is connected in series with ground.

Power for the MIC5011 is supplied by a charge pump. A
20kHz square wave (15Vp-p) drives the pump capacitor
and delivers current to a 100µF storage capacitor. A zener

24V

+
10µF

IRFP044 (2)

LOAD

CR2943-NA102A
(GE)

ON

OFF

100kΩ

330kΩ

1
2
3
4

V+
Input
Source
Gnd

MIC5011

Com

Gate

C1

C2

8
7
6
5

Figure 6. 50-Ampere

Industrial Switch

MIC5011 8 July 2000

MIC5011 Micrel

Applications Information (Continued)

15V

+

100µF

(GE)

90V

IRFP250

M

10mA
Control Input

1N4003 (2)

100kΩ

4N35

33pF

100kΩ

1kΩ

33kΩ

MPSA05

1
2
3
4

V+
Input
Source
Gnd

MIC5011

Com

Gate

C1

C2

1N4746

8
7
6

1nF

5

5BPB56HAA100

1/4 HP, 90V

100nF
200V

15Vp-p, 20kHz

Squarewave

1N4003

Figure 7. High-Voltage

Bootstrapped Driver

diode limits the supply to 18V. When the MIC5011 is off,
power is supplied by a diode connected to a 15V supply.
The circuit of Figure 5 is put to good use as a barrier
between low voltage control circuitry and the 90V motor
supply.

Half-Bridge Motor Driver (Figure 8). Closed loop control of
motor speed requires a half-bridge driver. This topology
presents an extra challenge since the two output devices
should not cross conduct (shoot-through) when switching.

1N4148

22kΩ

220pF

1
2
3
4

MIC5011

V+
Input
Source
Gnd

Cross conduction increases output device power dissipa­tion. Speed is also important, since PWM control requires
the outputs to switch in the 2 to 20kHz range.

The circuit of Figure 8 utilizes fast configurations for both the
top- and bottom-side drivers. Delay networks at each input
provide a 2 to 3µs dead time effectively eliminating cross
conduction. Two of these circuits can be connected to­gether to form an H-bridge for locked antiphase or sign/
magnitude control.

15V

1N5817

1N4001 (2)

+

1µF

IRF541

C1

Com

C2

Gate

100nF

8
7
6
5

PWM

INPUT

15V

+

10µF

12V,

M

10A Stalled

MIC5011

C1

Com

C2

Gate

8
7
6
5

IRF541

22kΩ

2N3904

10kΩ

1nF

1
2
3
4

V+
Input
Source
Gnd

Figure 8. Half-Bridge

Motor Driver

July 2000 9 MIC5011

MIC5011 Micrel

Applications Information (Continued)

12V

12V

+

IRFZ44

OUTPUT

(Delay=2.5s)

100kΩ 1N4148

+

47µF

10kΩ

100Ω

1
2
3
4

V+
Input
Source
Gnd

MIC5011

Com

Gate

C1

C2

10µF
8
7
6
5

Figure 9. 30 Ampere

Time-Delay Relay

Time-Delay Relay (Figure 9). The MIC5011 forms the

basis of a simple time-delay relay. As shown, the delay
commences when power is applied, but the 100kΩ/1N4148
could be independently driven from an external source such
as a switch or another high-side driver to give a delay
relative to some other event in the system. Hysteresis has
been added to guarantee clean switching at turn-on.

Motor Driver with Stall Shutdown (Figure 10). Tachom­eter feedback can be used to shut down a motor driver
circuit when a stall condition occurs. The control switch is a
3-way type; the “START” position is momentary and forces
the driver ON. When released, the switch returns to the
“RUN” position, and the tachometer's output is used to hold
the MIC5011 input ON. If the motor slows down, the tach
output is reduced, and the MIC5011 switches OFF. Resis­tor “R” sets the shutdown threshold.

Electronic Governor (Figure 11). The output of an ac
tachometer can be used to form a PWM loop to maintain the
speed of a motor. The tachometer output is rectified,
partially filtered, and fed back to the input of the MIC5011.
When the motor is stalled there is no tachometer output,
and MIC5011 input is pulled high delivering full power to the
motor. If the motor spins fast enough, the tachometer output
is sufficient to pull the MIC5011 input low, shutting the
output off. Since the rectified waveform is only partially
filtered, the input oscillates around its threshold causing the
MIC5011 to switch on and off at the frequency of the
tachometer signal. A PWM action results since the average
dc voltage at the input decreases as the motor spins faster.
The 1kΩ potentiometer is used to set the running speed of
the motor. Loop gain (and speed regulation) is increased by
increasing the value of the 100nF filter capacitor.

The performance of such a loop is imprecise, but stable and
inexpensive. A more elaborate loop would consist of a PWM
controller and a half-bridge.

MIC5011

1

V+

2

Input

RUN

STOP

3
4

Source
Gnd

12V

R

330kΩ330kΩ

1N4148

100nF

START

Figure 10. Motor Stall

Shutdown

1kΩ

1
2
3
4

15V

V+
Input
Source
Gnd

MIC5011

Com

Gate

1N4148

T

330kΩ

330kΩ

100nF

Figure 11. Electronic Governor

C1

C2

C1

Com

C2

Gate

T

10µF
8
7
6
5

10µF
8
7
6
5

+

IRFZ44

M

15V

+

1nF

IRF541

M

MIC5011 10 July 2000

MIC5011 Micrel

Applications Information (Continued)

Gate Control Circuit

When applying the MIC5011, it is helpful to understand the
operation of the gate control circuitry (see Figure 12). The
gate circuitry can be divided into two sections: 1) charge
pump (oscillator, Q1-Q5, and the capacitors) and 2) gate
turn-off switch (Q6).

When the MIC5011 is in the OFF state, the oscillator is
turned off, thereby disabling the charge pump. Q5 is also
turned off, and Q6 is turned on. Q6 holds the gate pin (G) at
ground potential which effectively turns the external MOS­FET off.

Q6 is turned off when the MIC5011 is commanded on, and
Q5 pulls the gate up to supply (through 2 diodes). Next, the
charge pump begins supplying current to the gate. The gate
accepts charge until the gate-source voltage reaches 12.5V
and is clamped by the zener diode.

A 2-output, three-phase clock switches Q1-Q4, providing a
quasi-tripling action. During the initial phase Q4 and Q2 are

ON. C1 is discharged, and C2 is charged to supply through
Q5. For the second phase Q4 turns off and Q3 turns on,
pushing pin C2 above supply (charge is dumped into the
gate). Q3 also charges C1. On the third phase Q2 turns off
and Q1 turns on, pushing the common point of the two
capacitors above supply. Some of the charge in C1 makes
its way to the gate. The sequence is repeated by turning Q2
and Q4 back on, and Q1 and Q3 off.

In a low-side application operating on a 12 to 15V supply,
the MOSFET is fully enhanced by the action of Q5 alone. On
supplies of more than approximately 14V, current flows
directly from Q5 through the zener diode to ground. To
prevent excessive current flow, the MIC5011 supply should
be limited to 15V in low-side applications.

The action of Q5 makes the MIC5011 operate quickly in
low-side applications. In high-side applications Q5
precharges the MOSFET gate to supply, leaving the charge
pump to carry the gate up to full enhancement 10V above
supply. Bootstrapped high-side drivers are as fast as low­side drivers since the chip supply is boosted well above the
drain at turn-on.

OFF

ON

100 kHz

OSCILLATOR

C1

Q1

Q2

+

V

Q3

125pF125pF

COM

C1 C2

Q4

Figure 12. Gate Control

Circuit Detail

C2

Q5

500Ω

Q6

GATE CLAMP

ZENER

G

12.5V

S

July 2000 11 MIC5011

MIC5011 Micrel

Package Information

PIN 1

DIMENSIONS:

INCH (MM)

0.018 (0.57)

0.100 (2.54)

0.026 (0.65)
MAX)

0.157 (3.99)

0.150 (3.81)

0.050 (1.27)

0.064 (1.63)

0.045 (1.14)

0.380 (9.65)

0.370 (9.40)

TYP

0.197 (5.0)

0.189 (4.8)

0.135 (3.43)

0.125 (3.18)

0.130 (3.30)

0.0375 (0.952)

0.380 (9.65)

0.320 (8.13)

8-Pin Plastic DIP (N)

PIN 1

DIMENSIONS:
INCHES (MM)

0.020 (0.51)

0.013 (0.33)

0.0098 (0.249)

0.0040 (0.102)

0°–8°

SEATING

PLANE

8-Pin SOP (M)

45°

0.050 (1.27)

0.016 (0.40)

0.244 (6.20)

0.228 (5.79)

0.255 (6.48)

0.245 (6.22)

0.300 (7.62)

0.013 (0.330)

0.010 (0.254)

0.010 (0.25)

0.007 (0.18)

MICREL INC. 1849 FORTUNE DRIVE SAN JOSE, CA 95131 USA

TEL + 1 [phone] FAX + 1 [phone] WEB http://www.micrel.com

This information is believed to be accurate and reliable, however no responsibility is assumed by Micrel for its use nor for any infringement of patents

or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent right of Micrel Inc.

© 1998 Micrel Incorporated

MIC5011 12 July 2000