Datasheet MIC4416BM4, MIC4417BM4 Datasheet (MICREL)

MIC4416 Micrel

MIC4416/4417

IttyBitty™ Low-Side MOSFET Driver

General Description

The MIC4416 and MIC4417 IttyBitty™ low-side MOSFET
drivers are designed to switch an N-channel enhancement­type MOSFET from a TTL-compatible control signal in low­side switch applications. The MIC4416 is noninverting and
the MIC4417 is inverting. These drivers feature short delays
and high peak current to produce precise edges and rapid
rise and fall times. Their tiny 4-lead SOT-143 package uses
minimum space.

The MIC4416/7 is powered from a +4.5V to +18V supply
voltage. The on-state gate drive output voltage is approxi­mately equal to the supply voltage (no internal regulators or
clamps). High supply voltages, such as 10V, are appropriate
for use with standard N-channel MOSFETs. Low supply
voltages, such as 5V, are appropriate for use with logic-level
N-channel MOSFETs.

In a low-side configuration, the driver can control a MOSFET
that switches any voltage up to the rating of the MOSFET.

The MIC4416 is available in the SOT-143 package and
is rated for –40°C to +85°C ambient temperature range.

Features

• +4.5V to +18V operation

• Low steady-state supply current
50µA typical, control input low
370µA typical, control input high

• 1.2A nominal peak output

3.5Ω typical output resistance at 18V supply

7.8Ω typical output resistance at 5V supply

• 25mV maximum output offset from supply or ground

• Operates in low-side switch circuits

• TTL-compatible input withstands –20V

• ESD protection

• Inverting and noninverting versions

Applications

• Battery conservation

• Solenoid and motion control

• Lamp control

• Switch-mode power supplies

Ordering Information

Part Number Temp. Range Package Marking
Noninverting

MIC4416BM4 –40°C to +85°C SOT-143 D10

Inverting

MIC4417BM4 –40°C to +85°C SOT-143 D11

5

Typical Application

* Siliconix

30m

Ω

, 7A max.

†

Load voltage limited only by
MOSFET drain-to-source rating

+12V

4.7µF

0.1µF

On
Off

Low-Side Power Switch

April 1998 5-23

MIC4416

32

VS

4

CTLGGND

Load

Voltage

1

†

Load

Si9410DY*
N-channel
MOSFET

MIC4416 Micrel

Pin Configuration

Identification

Part

Pin Description

Pin Number Pin Name Pin Function

1 GND Ground: Power return.
2 G Gate (Output) : Gate connection to external MOSFET.
3 VS Supply (Input): +4.5V to +18V supply.
4 CTL Control (Input): TTL-compatible on/off control input.

Dxx

GND

12

CTLVS

Part Number Identification

MIC4416BM4 D10
MIC4417BM4 D11

Early production identification: ML10

G

34

SOT-143 (M4)

MIC4416 only:

Logic low forces the gate output to ground.

MIC4417 only:

forces the gate output to the supply voltage.

Logic high forces the gate output to the supply voltage.
Logic high forces the gate output to ground. Logic low

5-24 April 1998

MIC4416 Micrel

Absolute Maximum Ratings

Supply Voltage (VS) ....................................................+20V

Control Voltage (V

Gate Voltage (VG) .......................................................+20V

Junction Temperature (TJ) ........................................ 150°C

) .................................. –20V to +20V

CTL

Operating Ratings

Supply Voltage (VS) ....................................... +4.5 to +18V

Ambient Temperature Range (TA) ............. –40°C to +85°C

Thermal Resistance (θJA)......................................220°C/W

(soldered to 0.25in2 copper ground plane)

Lead Temperature, Soldering ................... 260°C for 5 sec.

Electrical Characteristics

Parameter Condition (Note 1) Min Typ Max Units

Supply Current 4.5V ≤ V

Control Input Voltage 4.5V ≤ V

Control Input Current 0V ≤ V
Delay Time, V

Delay Time, V

Output Rise Time VS = 5V CL = 1000pF, Note 2 24 ns

Output Fall Time VS = 5V CL = 1000pF, Note 2 28 ns

Gate Output Offset Voltage 4.5V ≤ V

Output Resistance V

Gate Output Reverse Current No latch up 250 mA

Rising VS = 5V CL = 1000pF, Note 2 42 ns

CTL

VS = 18V CL = 1000pF, Note 2 33 60 ns

Falling VS = 5V CL = 1000pF, Note 2 42 ns

CTL

VS = 18V CL = 1000pF, Note 2 23 40 ns

VS = 18V CL = 1000pF, Note 2 14 40 ns

VS = 18V CL = 1000pF, Note 2 16 40 ns

S

V

S

≤ 18V V

S

≤ 18V V

S

≤ V

CTL

S

≤ 18V VG = high –25 mV

S

= 5V, I

= 18V, I

OUT

OUT

= 10mA

= 10mA

= 0V 50 200 µA

CTL

V

= 5V 370 1500 µA

CTL

for logic 0 input 0.8 V

CTL

V

for logic 1 input 2.4 V

CTL

–10 10 µA

VG = low 25 mV

P-channel (source) MOSFET 7.6 Ω
N-channel (sink) MOSFET 7.8 Ω

P-channel (source) MOSFET 3.5 10 Ω
N-channel (sink) MOSFET 3.5 10 Ω

5

General Note: Devices are ESD protected, however handling precautions are recommended.
Note 1: Typical values at TA = 25°C. Minimum and maximum values indicate performance at –40°C ≥ TA ≥ +85°C. Parts production tested at 25°C.
Note 2: Refer to “MIC4416 Timing Definitions” and “MIC4417 Timing Definitions” diagrams (see next page).

April 1998 5-25

MIC4416 Micrel

Definitions

I

V

SUPPLY

MIC4416 = high
MIC4417 = low

(P-channel on, N-channel off)

INPUT

OUTPUT

SUPPLY

MIC4416/7

32

VS

4

CTLGGND

1

Source State

MIC4416/MIC4417 Operating States

5V

90%
10%

0V

V

S

90%

10%

0V

I

OUT

delay

time

I

I

SUPPLY

V

V

≈ V

OUT

SUPPLY

SUPPLY

MIC4416 = low
MIC4417 = high

MIC4416/7

32

VS

4

CTLGGND

OUT

V

≈ GND

OUT

1

Sink State

(P-channel off, N-channel on)

2.5V

pulse
width

rise

time

delay

time

fall

time

Test Circuit

INPUT

OUTPUT

5V

90%
10%

0V

V

90%

10%

0V

MIC4416 (Noninverting) Timing Definitions

pulse

time

width

rise

time

delay

S

MIC4417 (Inverting) Timing Definitions

V

SUPPLY

MIC4416/7

32

VS

4

5V
0V

CTLGGND

1

2.5V

delay

time

V

OUT

C

L

fall

time

5-26 April 1998

MIC4416 Micrel

0

10

20

30

40

50

-60 -30 0 30 60 90 120 150

TIME (ns)

TEMPERATURE (°C)

0

10

20

30

40

50

60

-60 -30 0 30 60 90 120 150

TIME (ns)

TEMPERATURE (°C)

0.1

1

10

100

1 10 100

SUPPLY CURRENT (mA)

CAPACITANCE (nF)

0.01

0.1

1

10

1 10 100

TIME (µs)

CAPACITANCE (nF)

Typical Characteristics Note 3

Quiescent Supply Current

vs. Supply Voltage

500

V

= 5V

400

300

200

100

SUPPLY CURRENT (µA)

0

0 3 6 9 12 15 18

SUPPLY VOLTAGE (V)

CTL

V

= 0V

CTL

Supply Current

1

10

vs. Frequency

V

= 18V

SUPPLY

5V

100

FREQUENCY (kHz)

100

10

SUPPLY CURRENT (mA)

0.1

1000

2000

Supply Current

vs. Load Capacitance

100

1MHz

100kHz

10

10kHz

1

SUPPLY CURRENT (mA)

0.1
1 10 100

V

= 5V

SUPPLY

CAPACITANCE (nF)

Output Rise and Fall Time

vs. Load Capacitance

100

V

= 5V

SUPPLY

= 50kHz

f

CTL

10

1

TIME (µs)

0.1

0.01
1 10 100

CAPACITANCE (nF)

FALL

RISE

Supply Current

vs. Load Capacitance

V

SUPPLY

100kHz

10kHz

= 18V

1MHz

Output Rise and Fall Time

vs. Load Capacitance

V

= 18V

SUPPLY

= 50kHz

f

CTL

FALL

RISE

5

60

50

40

30

TIME (ns)

20

10

0

0 3 6 9 12 15 18

50

40

30

20

April 1998 5-27

TIME (ns)

10

0

0 3 6 9 12 15 18

Delay Time

vs. Supply Voltage

V

RISE

CTL

V

FALL

CTL

SUPPLY VOLTAGE (V)

Rise and Fall Time
vs. Supply Voltage

f

= 1MHz

CTL

FALL

RISE

SUPPLY VOLTAGE (V)

Delay Time

vs. Temperature

60

50

40

30

TIME (ns)

20

10

0

-60 -30 0 30 60 90 120 150

V

FALL

CTL

V

= 5V

SUPPLY

TEMPERATURE (°C)

V

RISE

CTL

Rise and Fall Time

vs. Temperature

50

40

FALL

30

20

TIME (ns)

10

0

-60 -30 0 30 60 90 120 150

TEMPERATURE (°C)

RISE

V

SUPPLY

f

CTL

= 5V

= 1MHz

Delay Time

vs. Temperature

V

RISE

CTL

V

FALL

CTL

V

= 18V

SUPPLY

Rise and Fall Time

vs. Temperature

V

= 18V

SUPPLY

= 1MHz

f

CTL

FALL

RISE

MIC4416 Micrel

Output Voltage Drop vs.

Output Source Current

1200

1000

800

600

400

VOLTAGE DROP (mV)

200

NOTE 4

V

= 5V

SUPPLY

18V

0

0 20406080100

OUTPUT CURRENT (mA)

Output

Source Resistance

10

8

6

4

I

= 10mA

OUT

2

ON RESISTANCE (Ω)

0

0 3 6 9 12 15 18

SUPPLY VOLTAGE (V)

Output Voltage Drop vs.

Output Sink Current

1200

NOTE 5

1000

800

V

= 5V

600

400

VOLTAGE DROP (mV)

200

0

SUPPLY

18V

0 20406080100

OUTPUT CURRENT (mA)

Output

Sink Resistance

10

8

6

4

I

= 10mA

OUT

2

ON RESISTANCE (Ω)

0

0 3 6 9 12 15 18

SUPPLY VOLTAGE (V)

Control Input Hysteresis

vs. Supply Voltage

600

500

400

300

200

HYSTERESIS (mV)

100

0

0369121518

SUPPLY VOLTAGE (V)

Control Input Hysteresis

800

600

400

200

HYSTERESIS (mV)

vs. Temperature

V

= 18V

SUPPLY

5V

0

-60 -30 0 30 60 90 120 150

TEMPERATURE (°C)

Output Source Resistance

vs. Temperature

14
12

V

= 5V

SUPPLY

≈ 3mA

10

8
6
4

ON-RESISTANCE (Ω)

2
0

-60 -30 0 30 60 90 120 150

I

OUT

V

= 18V

SUPPLY

≈ 3mA

I

OUT

TEMPERATURE (°C)

Supply Current

100

10

SUPPLY CURRENT (mA)

0.1
1x10

vs. Frequency

V

= 5V

SUPPLY

CL = 10,000pF

5,000pF

2,000pF

1,000pF

1

0pF

2

1x1031x1041x1051x1061x10

FREQUENCY (Hz)

Output Sink Resistance

vs. Temperature

14
12

V

= 5V

SUPPLY

≈ 3mA

I

OUT

10

8
6
4

ON-RESISTANCE (Ω)

2
0

-60 -30 0 30 60 90 120 150

V

= 18V

SUPPLY

≈ 3mA

I

OUT

TEMPERATURE (°C)

Peak Output Current

vs. Supply Voltage

2.5

2.0

1.5

1.0

CURRENT (A)

0.5

0

0 3 6 9 12 15 18

Source

NOTE 6

Sink

NOTE 7

SUPPLY VOLTAGE (V)

Note 3: Typical Characteristics at

TA = 25°C, VS = 5V,

Supply Current

100

10

SUPPLY CURRENT (mA)

7

0.1
1x10

vs. Frequency

V

= 18V

SUPPLY

CL = 10,000pF

5,000pF

2,000pF

1,000pF

0pF

1

2

1x1031x1041x1051x1061x10

FREQUENCY (Hz)

Note 4: Source-to-drain voltage drop across the

Note 5: Drain-to-source voltage drop across the

Note 6: 1µs pulse test, 50% duty cycle. OUT

Note 7: 1µs pulse test, 50% duty cycle. VS

7

CL = 1000pF unless noted.

internal P-channel MOSFET =
VS – VG.

internal N-channel MOSFET = VG – V
(Voltage applied to G.)

GND

connected to GND. OUT sources current.
(MIC4416, V
MIC4417, V

CTL

CTL

= 5V;

= 0V)

connected to OUT. OUT sinks current.
(MIC4416, V
MIC4417, V

CTL

CTL

= 0V;

= 5V)

.

5-28 April 1998

MIC4416 Micrel

Functional Diagram

V

SUPPLY

V

SWITCHED

VS

0.6mA

MIC4417

INVERTING

MIC4416

NONINVERTING

Load

Q3

G

Q4

GND

CTL

Logic-Level

Input

D1

0.3mA
Q2

R1

2k

D2

D3
35V

D4

Q1

D5

Functional Diagram with External Components

Functional Description

Refer to the functional diagram.
The MIC4416 is a noninverting driver. A logic high on the CTL

(control) input produces gate drive output. The MIC4417 is
an inverting driver. A logic low on the CTL (control) input
produces gate drive output. The G (gate) output is used to
turn on an external N-channel MOSFET.

Supply

VS (supply) is rated for +4.5V to +18V. External capacitors
are recommended to decouple noise.

Control

CTL (control) is a TTL-compatible input. CTL must be forced
high or low by an external signal. A floating input will cause
unpredictable operation.

A high input turns on Q1, which sinks the output of the 0.3mA
and the 0.6mA current source, forcing the input of the first
inverter low.

Hysteresis

The control threshold voltage, when CTL is rising, is slightly
higher than the control threshold voltage when CTL is falling.

When CTL is low, Q2 is on, which applies the additional

0.6mA current source to Q1. Forcing CTL high turns on Q1
which must sink 0.9mA from the two current sources. The
higher current through Q1 causes a larger drain-to-source
voltage drop across Q1. A slightly higher control voltage is
required to pull the input of the first inverter down to its
threshold.

5

Q2 turns off after the first inverter output goes high. This
reduces the current through Q1 to 0.3mA. The lower current
reduces the drain-to-source voltage drop across Q1. A
slightly lower control voltage will pull the input of the first
inverter up to its threshold.

Drivers

The second (optional) inverter permits the driver to be manu­factured in inverting and noninverting versions.

The last inverter functions as a driver for the output MOSFETs
Q3 and Q4.

Gate Output

G (gate) is designed to drive a capacitive load. VG (gate
output voltage) is either approximately the supply voltage or
approximately ground, depending on the logic state applied
to CTL.

If CTL is high, and VS (supply) drops to zero, the gate output
will be floating (unpredictable).

ESD Protection

D1 protects VS from negative ESD voltages. D2 and D3
clamp positive and negative ESD voltages applied to CTL.
R1 isolates the gate of Q1 from sudden changes on the CTL
input. D4 and D5 prevent Q1’s gate voltage from exceeding
the supply voltage or going below ground.

April 1998 5-29

MIC4416 Micrel

Application Information

The MIC4416/7 is designed to provide high peak current for
charging and discharging capacitive loads. The 1.2A peak
value is a nominal value determined under specific condi­tions. This nominal value is used to compare its relative size
to other low-side MOSFET drivers. The MIC4416/7 is not
designed to directly switch 1.2A continuous loads.

Supply Bypass

Capacitors from VS to GND are recommended to control

* Gate enhancement voltage

+8V to +18V

4.7µF

0.1µF

Logic

Input

MIC4416

32

VS

4

CTLGGND

†

International Rectifier

Ω

, 60V MOSFET

100m

+15V

Try a

15

Ω

, 15W

or

Load

1k, 1/4W

resistor

Standard
MOSFET

†

VGS*

IRFZ24

1

switching and supply transients. Load current and supply
lead length are some of the factors that affect capacitor
size requirements.

A 4.7µF or 10µF tantalum capacitor is suitable for many
applications. Low-ESR (equivalent series resistance) metal­ized film capacitors may also be suitable. An additional 0.1µF
ceramic capacitor is suggested in parallel with the larger
capacitor to control high-frequency transients.

The low ESR (equivalent series resistance) of tantalum
capacitors makes them especially effective, but also makes
them susceptible to uncontrolled inrush current from low
impedance voltage sources (such as NiCd batteries or auto­matic test equipment). Avoid instantaneously applying volt­age, capable of very high peak current, directly to or near
tantalum capacitors without additional current limiting. Nor­mal power supply turn-on (slow rise time) or printed circuit
trace resistance is usually adequate for normal product
usage.

Circuit Layout

Avoid long power supply and ground traces. They exhibit

Logic-Level MOSFET

Logic-level N-channel power MOSFETs are fully enhanced
with a gate-to-source voltage of approximately 5V and have
an absolute maximum gate-to-source voltage of ±10V. They
are less common and generally more expensive.

The MIC4416/7 can drive a logic-level MOSFET if the supply
voltage, including transients, does not exceed the maximum
MOSFET gate-to-source rating (10V).

Figure 1. Using a Standard MOSFET

* Gate enhancement voltage

(must not exceed 10V)

+4.5V to 10V*

4.7µF

0.1µF

Logic

Input

†

International Rectifier
28m

MIC4416

32

VS

4

CTLGGND

Ω

, 60V MOSFET

+5V

Try a

3

Ω

, 10W

or

Load

Ω

, 1/4W

100

resistor

Logic-Level
MOSFET

†

VGS*

IRLZ44

1

inductance that can cause voltage transients (inductive kick).
Even with resistive loads, inductive transients can sometimes
exceed the ratings of the MOSFET and the driver.

When a load is switched off, supply lead inductance forces
current to continue flowing—resulting in a positive voltage
spike. Inductance in the ground (return) lead to the supply
has similar effects, except the voltage spike is negative.

Switching transitions momentarily draw current from VS to
GND. This combines with supply lead inductance to create

At low voltages, the MIC4416/7’s internal P- and N-channel
MOSFET’s on-resistance will increase and slow the output
rise time. Refer to “Typical Characteristics” graphs.

Inductive Loads

Figure 2. Using a Logic-Level MOSFET

V

SWITCHED

voltage transients at turn on and turnoff.

V

Transients can also result in slower apparent rise or fall times
when driver’s ground shifts with respect to the control input.

Minimize the length of supply and ground traces or use
ground and power planes when possible. Bypass capacitors
should be placed as close as practical to the driver.

MOSFET Selection

Standard MOSFET

Figure 3. Switching an Inductive Load

4.7µF

0.1µF

On
Off

SUPPLY

MIC4416

32

VS

4

CTLGGND

1

Schottky
Diode

A standard N-channel power MOSFET is fully enhanced with
a gate-to-source voltage of approximately 10V and has an
absolute maximum gate-to-source voltage of ±20V.

The MIC4416/7’s on-state output is approximately equal to
the supply voltage. The lowest usable voltage depends upon
the behavior of the MOSFET.

Switching off an inductive load in a low-side application forces
the MOSFET drain higher than the supply voltage (as the
inductor resists changes to current). To prevent exceeding
the MOSFET’s drain-to-gate and drain-to-source ratings, a
Schottky diode should be connected across the inductive
load.

5-30 April 1998

MIC4416 Micrel

Power Dissipation

The maximum power dissipation must not be exceeded to
prevent die meltdown or deterioration.

Power dissipation in on/off switch applications is negligible.
Fast repetitive switching applications, such as SMPS (switch-

mode power supplies), cause a significant increase in power
dissipation with frequency. Power is dissipated each time
current passes through the internal output MOSFETs when
charging or discharging the external MOSFET. Power is also
dissipated during each transition when some current momen­tarily passes from VS to GND through both internal MOSFETs.

Power dissipation is the product of supply voltage and supply
current:

1) PD = VS × I

S

where:

PD = power dissipation (W)
VS = supply voltage (V)
IS = supply current (A) [see paragraph below]

Supply current is a function of supply voltage, switching
frequency, and load capacitance. Determine this value from
the “Typical Characteristics: Supply Current vs. Frequency”
graph or measure it in the actual application.

Do not allow PD to exceed P

D (max)

, below.

TJ (junction temperature) is the sum of TA (ambient tempera­ture) and the temperature rise across the thermal resistance
of the package. In another form:

150 T

−

2)

P

≤

D

A

220

where:

P

= maximum power dissipation (W)

D (max)

150 = absolute maximum junction temperature (°C)
TA = ambient temperature (°C) [68°F = 20°C]
220 = package thermal resistance (°C/W)

Maximum power dissipation at 20°C with the driver soldered
to a 0.25in2 ground plane is approximately 600mW.

G

PCB heat sink/

ground plane

GND

High-Frequency Operation

Although the MIC4416/7 driver will operate at frequencies
greater than 1MHz, the MOSFET’s capacitance and the load
will affect the output waveform (at the MOSFET’s drain).

For example, an MIC4416/IRL3103 test circuit using a 47Ω
5W load resistor will produce an output waveform that closely
matches the input signal shape up to about 500kHz. The
same test circuit with a 1kΩ load resistor operates only up to
about 25kHz before the MOSFET source waveform shows
significant change.

+5V

47k

1k

D

G

S

1

* International Rectifier

Ω

, 30V MOSFET,

14m
logic-level, V

= ±20V max.

GS

Compare

Ω

, 5W

to

Ω

, 1/4W

loads

Logic-Level
MOSFET
IRL3103*

+4.5V to 18V

4.7µF

0.1µF

Logic

Input

Slower rise time

observed at

MOSFET’s drain

MIC4416

32

VS

4

CTLGGND

Figure 5. MOSFET Capacitance Effects at High

Switching Frequency

When the MOSFET is driven off, the slower rise occurs
because the MOSFET’s output capacitance recharges through
the load resistance (RC circuit). A lower load resistance
allows the output to rise faster. For the fastest driver opera­tion, choose the smallest power MOSFET that will safely
handle the desired voltage, current, and safety margin. The
smallest MOSFETs generally have the lowest capacitance.

5

VS

CTL

PCB traces

Figure 4. Heat-Sink Plane

The SOT-143 package θJA (junction-to-ambient thermal re­sistance) can be improved by using a heat sink larger than the
specified 0.25in2 ground plane. Significant heat transfer
occurs through the large (GND) lead. This lead is an
extension of the paddle to which the die is attached.

April 1998 5-31