
P-Channel 20V (D-S)MOSFET
MI3475
General Description
This miniature surface mount MOSFET uses ad vanced
Trench process,low RDS(ON ) assures minimal power
lo ss and ene rgy co nvert , wh ich m akes t his de vice
ideal f or u se i n p ower m anagement c ircuit.
Applications
Load switching
Low current DC-DC co nve rte rs
Small power management
Features
VD S (V)=-20V
ID (A)=-3.4A(VGS =-4.5V)
RD S(on) = 90 mΩ @ VGS=-4.5V
RD S(on) = 135 mΩ @ VGS=-2.5V
RD S(on) = 230 mΩ @ VGS=-1.8V
ESD Rating:3000V HBM
Low gate charge
Fast switching speed
High performance trench techn olo gy
D
.
.
G
Top Vi ew
S
Absolute Maximum Ratings (TA = 25℃ Unless Otherwise Not ed)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Di ode C ond uct ion )
Power Dissipation
Operating Junction and Storag e Temperature Range
a
b
a
a
TA =25℃
TA =70℃
TA =25℃
TA =70℃
Symbol
VD S
VG S
ID
ID M
IS
PD
TJ ,Tstg
Thermal Resistance Ratings
Symbol
R θJA
Maximum Junction-to-Ambie nt
www.meg apo wer .com. cn
Parameter
a
t<= 10 sec
Steady-State
1
Maximum Units
-20
±12
-3.4
-2.7
-13
-2.0
1. 4
0. 9
-55 to 150
Maximum
90
130
Feb.20 12 Re v.2.0
V
A
A
W
℃
Units
℃/W

Package Outlines and Ordering Information
Device
MI3475
Device Marking
M06S
Reel Size
7’’
Specifications (TA = 25℃ Unless Otherwise Noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resist anc e
Forward Tranconductance
Diode Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Tra nsf er Ca pac ita nce
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Tur n-O n Del ay Tim e
Rise Time
Tur n-O ff Delay Time
Fall-Time
Notes: a . Sur face Moun ted on 1” x 1” FR 4 Boa rd.
b. Pulse w idt h limited b y maximum j unc tion temp erature
c. Pulse t est : PW <= 300us d uty cycle < = 2%.
c
c
c
Symbol
V( BR)D SS
VG S(th )
IG SS
ID SS
ID (on)
RD S(on )
g
fs
VS D
Ci ss
Co ss
Cr ss
Qg
Qg s
Qg d
td (on)
tr
td (off)
tf
Test Conditions
VG S=0V,ID=-250uA
VD S =VGS,ID = -250 u A
VD S=0V,VGS=±12V
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V,TJ=85℃
VDS=-5V,VGS=-4.5V
VGS=-4.5V,ID=-3.3A
VGS =-2.5 V, ID=-1.8A
VGS =-1.8 V, ID=-0.5A
VD S=-5V,ID =-3.3A
IS =-1A,VGS=0 V
VD S=-10V,VGS =0V
f=1MHz
VD S=-10V,VGS=- 4.5 V
ID =-3.3A
VDS=-10V, ID=-2.2A,
RG=6 ohm,VGEN=-4.5V
Tape Width
8mm
Limits
Min Typ Max
-20
-0.45
-0.7
-13
70
110
150
9
-0.8
370
65
45
3.9
0.5
1.4
6
13
25
15
Quantity
3000 units
-1
±10
-1
-30
90
135
230
-1.3
6
12
26
50
32
MI3475
Units
V
uA
uA
A
mΩ
S
V
pF
nC
ns
www.meg apo wer .com. cn
2
Feb.20 12 Re v.2.0

Typical Electrical and Thermal Ch aracteristics
MI3475
12
VGS =-2.5,- 3,-4,-5 ,-6,- 7,-8, -9, -10 V
10
8
-2V
6
-1.5V
4
-ID-Dr ain Curre nt( A)
2
-1V
0
0. 0 0. 5 1.0 1 .5 2.0 2. 5
-VDS Drain-t o-So urce Volta ge(V )
Figure 1: Out put Chara cter istics
260
240
220
200
VGS =-1.8V
180
160
140
VGS =-2.5V
120
100
80
RD S(on)- On -Resi stance( mΩ)
60
40
0 2 4 6 8 10
1. 6
VGS =-4.5V
-ID- Dra inCu rrent(A )
Figure 3 : On-R esistan ce vs Dr ain Curre nt
ID= -25 0uA
1. 4
1. 8
VGS =-4.5V
IDS =-3.3A
1. 6
1. 4
1. 2
1. 0
0. 8
0. 6
RD S(ON) -On Re sist ance
(Norma lize d)
0. 4
0. 2
0
-50 -25 0 25 5 0 75 10 0 125 150
TJ -Jun ctio n Tem peratur e(℃)
Figure 2 : On-R esistan ce vs. Junctio n Tem pera ture
RON @Tj= 25℃;8 5mΩ
140
120
Ω)
m
eR
100
stan (
R si c
80
n e
N -O
( )
60
S O
D
40
0 1 2 3 4 5 6 7 8 9 10
-VGS Gat e-to -Sou rce Voltag e(V)
Figure 4 : On-R esis tance vs. Gate -to- Sou rce Vol tage
10
ID= -3. 3A
1. 2
1. 0
0. 8
0. 6
-VG S(th) Va rian ce(V)
0. 4
0. 2
0
-50 -25 0 25 5 0 75 10 0 125 150
Figure 5: Thr esho ld Voltage
www.meg apo wer .com. cn
TJ- Tem per atue r(℃)
Tj= 150℃
1
-Is-So urce C urre nt(A)
0. 1
0 0. 2 0. 4 0.6 0 .8 1.0 1. 2 1. 4 1.6
-VSD -So urce -to- Drain Volt age( V)
Figure 6: Sou rce- Drain Dio de For ward Vo lta ge
3
Tj= 25℃
Feb.20 12 Re v.2.0

Typical Electrical and Thermal Ch aracteristics
MI3475
t
n
ie
n
a
ive r s
t T
c
e
f
f
E
e
z d
ma i
Nor l
5
VD S=-10V
4. 5
ID= -3.3A
)
VV t
(
4
e
ag
t
3. 5
ol
3
e V
rc
2. 5
ou
-
o
t
2
-
a e S
1. 5
S G
G
1
-
0. 5
0
0 0. 5 1 1. 5 2 2.5 3 3 .5 4 4.5
Qg-Total G ate Ch arge(nC )
Figur 7 :G ate Ch ange
100.0
T
=150°C
J(M ax)
T A =25°C
10.0
R
DS( ON)
100us
limited
1ms
(A mps )
D
I
1.0
0.1s
10ms
1s
10s
0.1
0.1
1 1
DC
VDS (Volts)
Figure 9 : Max imum Forw ard Biase d Saf e
Operat ing Ar ea (Note d)
10
D=T on/T
.
T
J,P K=TA +PDM
e
c
e n
p da
e
d
l
ma
r
0.1
e
h
T
1
Rθ JA=130 W℃/
Z
JA
θ
0 100
550
500
Freque ncy =1MHz
450
400
Ciss
350
300
250
200
Capaci tanc e(pF )
150
100
50
0
0 4 8 12 16 20
-VDS Dai n-to -Source Vo ltag e(V)
Figure 8 : Capa citance
Coss
Crss
40
T
30
)
W
(
r
20
e
w
o
P
T A =25°C
10
0
0.001 0.01 0.1
1 1
Pulse Wi dth ( s)
Figure 1 0: Si ngle Puls e Power Rat ing J unction -to-
Ambien t (No te d)
In desce ndi ng order
D=0.5, 0 .3, 0 .1, 0.05, 0 .02, 0.01 , single pu lse
P
D
T
o n
T
=150°C
J(M ax)
0 1 00 1000
0.01
0.00001 0.000 1 0.001 0.01 0.1 1 1 0 100 1000
Pulse Wi dth ( s)
Figure 11 : Normali zed Maxim um Tra nsient Therma l Imp edance
Note d:
These te sts a re perfor med with th e device mo unt ed on 1 in FR -4 bo ard with 2o z. Copper, i n a sti ll air envi ronment w ith
T A=25 °C. The SOA cu rve provi des a s ingle pul se rating .
www.meg apo wer .com. cn
2
4
Feb.20 12 Re v.2.0

Package
SOT -23 3-Lead
MI3475
D
3
1 2
e
e1
T OP VIEW
E1 E
A
SYMBOL MIN NOM MAX
A 0.70 1.15
1.00
A1 0.00 0.13
b 0.30 0.50
c 0.20
0.08
D 2 .80 3. 10
E 2.60 3.0 0
E1 1.4 0 1. 80
0.40
0.13
2.90
2.80
1.60
e 0. 95 BS C
e1 1.90 BSC
L 0.400 REF
L1 0.540 REF
0 º 8 º
θ
θ
5º
b
A1
SIDE VIEW
Notes:
(1) A ll dimensions are in mil lim ete rs. A ngles in degrees.
(2) C omplies with JEDEC TO-23 6.
www.meg apo wer .com. cn
L1 L
END VIEW
5
Feb.20 12 Re v.2.0
c
Doc.SOT233-090701