Datasheet MI3473 Datasheet (MegaPower)

P-Channel 20V (D-S)MOSFET

MI3473

General Description

This miniature surface mount MOSFET uses ad vanced Trench process,low RDS(ON ) assures minimal power

lo ss and ene rgy co nvert , wh ich m akes t his de vice ideal f or u se i n p ower m anagement c ircuit.

Applications

Load switching Low current DC-DC co nve rte rs

Small power management

Features

VD S (V)=-20V

ID (A)=-3.6A(VGS =-4.5V)

RD S(on) = 70 mΩ @ VGS=-4.5V

RD S(on) = 110 m Ω @ VGS =-2.5V

RD S(on) = 250 mΩ @ VGS=-1.8V

ESD Rating:3000V HBM

Low gate charge

Fast switching speed

High performance trench techn olo gy

D

.

G

Top Vi ew

S

Absolute Maximum Ratings (TA = 25℃ Unless Otherwise Not ed)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Continuous Source Current (Di ode C ond uct ion )

Power Dissipation

Operating Junction and Storag e Temperature Range

a

b

a

TA =25℃

TA =70℃

TA =25℃

TA =70℃

Symbol

VD S

VG S

ID

ID M

IS

PD

TJ ,Tstg

Thermal Resistance Ratings

Symbol

R θJA

Maximum Junction-to-Ambie nt

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Parameter

a

t<= 10 sec

Steady-State

1

Maximum Units

-20

±12

-3.6

-2.8

-14

-2.3

1.4

0.9

-55 to 150

Maximum

90

130

Feb.20 12 Re v.2.0

V

A

W

℃

Units

℃/W

Package Outlines and Ordering Information

Device

MI3473

Device Marking

M04S

Reel Size

7’’

Specifications (TA = 25℃ Unless Otherwise Noted)

Parameter

Static

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resist anc e

Forward Tranconductance

Diode Forward Voltage

Dynamic

Input Capacitance

Output Capacitance

Reverse Tra nsf er Ca pac ita nce

Switching

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Tur n-O n Del ay Tim e

Rise Time

Tur n-O ff Delay Time

Fall-Time

Notes: a . Sur face Moun ted on 1” x 1” FR 4 Boa rd. b. Pulse w idt h limited b y maximum j unc tion temp erature

c. Pulse t est : PW <= 300us d uty cycle < = 2%.

c

Symbol

V( BR)D SS

VG S(th )

IG SS

ID SS

ID (on)

RD S(on )

g

fs

VS D

Ci ss

Co ss

Cr ss

Qg

Qg s

Qg d

td (on)

tr

td (off)

tf

Test Conditions

VG S=0V,ID=-250uA

VD S =VGS,ID = -250 u A

VD S=0V,VGS=±12V

VDS=-20V,VGS=0V

VDS=-20V,VGS=0V,TJ=85℃

VDS=-5V,VGS=-4.5V

VGS=-4.5V,ID=-3.6A

VGS =-2.5 V, ID=-2A

VGS =-1.8 V, ID=-1A

VD S=-5V,ID =-3.6A

IS =-1.2A,VGS=0V

VD S=-10V,VGS =0V

f=1MHz

VD S=-10V,VGS=- 4.5 V

ID =-3.6A

VDS=-10V, ID=-2.2A,

RG=6 ohm,VGEN=-4.5V

Tape Width

8mm

Limits

Min Typ Max

-20

-0.5

-0.75

-14

55

80

135

11

-0.7

550

90

80

6.2

1.3

1.2

5

12

30

22

Quantity

3000 units

-1

±10

-1

-30

70

110

250

-1.1

9

8

24

65

37

MI3473

Units

V

uA

A

mΩ

S

V

pF

nC

ns

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2

Feb.20 12 Re v.2.0

Typical Electrical and Thermal Ch aracteristics

MI3473

12

VGS =-3,-4, -5, -6, -7,-8 ,-9 ,-10V

10

-2.5V

8

6

-2V

4

-ID-Dr ain Curre nt( A)

2

0

0. 0 0. 5 1.0 1 .5 2.0 2. 5 3. 0

-VDS Drain-t o-So urce Volta ge(V )

Figure 1: Out put Chara cter istics

-1.5V

240

210

180

VGS =-1.8V

150

120

VGS =-2.5V

90

60

RD S(on)- On -Resi stance( mΩ)

30

0

0 2 4 6 8 10 12

Figure 3 : On-R esistan ce vs Dr ain Curre nt

VGS =-4.5V

-ID- Dra inCu rrent(A )

1. 6

0. 03

VGS =-10V

0. 025

IDS =-3.6A

0. 02

0. 015

0. 01

RD S(ON) -On Re sist ance

(Norma lize d)

0. 005

0

-50 -25 0 25 5 0 75 10 0 125 150

TJ -Jun ctio n Tem peratur e(℃)

Figure 2 : On-R esistan ce vs. Junctio n Tem pera ture

150

140

130

120

)

110

(mΩ

ce

100

n a

t

90

is s

80

Re

70

On

)-

60

ON

(

50

DS

R

40

30

1 2 3 4 5 6 7 8 9 10

-VGS Gate-to -Sou rce Voltag e(V)

Figure 4 : On-R esis tance vs. Gate -to- Sou rce Vol tage

10

ID= -3. 6A

1. 4

1. 2

1. 0

0. 8

-VG S(th) Va rian ce(V)

0. 6

0. 4

0. 2

-50 -25 0 25 5 0 75 10 0 125 150

Figure 5: Thr esho ld Voltage

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TJ- Tempe ratu er(℃)

ID= -25 0uA

Tj= 150℃

1

-Is-So urce C urre nt(A)

0. 1 0 0. 3 0. 6 0.9 1 .2 1.5

-VSD -So urce -to- Drain Volt age( V)

Figure 6: Sou rce- Drain Dio de For ward Vo lta ge

Tj= 25℃

3

Feb.20 12 Re v.2.0

Typical Electrical and Thermal Ch aracteristics

MI3473

t n

ie n

a

ive r s t T

c e

f f

E e

z d

ma i

Nor l

5

VD S=-10V

)-

ID= -3.6A

(

4

ge lt V Vo

3

c a u e

o

-S r

2

e t -to

SG Ga

1

V

0

0 1 2 3 4 5 6 7

Qg-Total G ate Ch arge(nC )

Figur 7 :G ate Ch ange

100.0

T

=150°C

J(M ax)

T A =25°C

R

10.0

DS( ON)

limited

(A mps )

D

I

1.0

0.1s

10ms

1s

10s

0.1

1 1

DC

VDS (Volts)

Figure 9 : Max imum Forw ard Biase d Saf e

Operat ing Ar ea (Note d)

10

D=T on/T

.

T

J,P K=TA +PDM

e c

e n p da e d l

ma r

0.1

e h T

1

Rθ JA=130 W℃/

Z

JA

θ

100 µ s

1ms

0 100

800

Freque ncy =1MHz

700

600

Ciss

500

400

300

Capaci tanc e(pF )

200

100

Coss

Crss

0

0 4 8 12 16 20

-VDS Dai n-to -Source Vo ltag e(V)

Figure 8 : Capa citance

40

T

30

)

W

(

r

20

e w

o P

T A =25°C

10

0

0.001 0. 01 0.1

1 1

Pulse Wi dth ( s)

Figure 1 0: Si ngle Puls e Power Rat ing J unction -to-

Ambien t (No te d)

In desce ndi ng order D=0.5, 0 .3, 0 .1, 0.05, 0 .02, 0.01 , single pu lse

P

D

T

o n

T

=150°C

J(M ax)

0 10 0 1000

0.01

0.00001 0.0001 0.001 0.01 0.1 1 1 0 100 1000

Pulse Wi dth ( s)

Figure 11 : Normali zed Maxim um Tra nsient Therma l Imp edance

Note d:

These te sts a re perfor med with th e device mo unt ed on 1 in FR -4 bo ard with 2o z. Copper, i n a sti ll air envi ronment w ith

T A=25 °C. The SOA cu rve provi des a s ingle pul se rating .

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2

4

Feb.20 12 Re v.2.0

Package

SOT -23 3-Lead

MI3473

D

3

1 2

e

e1

T OP VIEW

E1 E

A

SYMBOL MIN NOM MAX

A 0.70 1.15

1.00

A1 0.00 0.13

b 0.30 0.50

c 0.20

0.08

D 2. 80 3.1 0

E 2 .60 3. 00

E1 1. 40 1.80

0.40

0.13

2.90

2.80

1.60

e 0.95 BSC

e1 1. 90 BS C

L 0 .40 0 REF

L1 0 .54 0 REF

0 º 8 º

θ

5º

b

A1

SIDE VIEW

Notes:

(1) All dimensions are i n mil lim eters. Angles in degre es. (2) Complies with JEDE C TO -23 6.

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L1 L

END VIEW

5

c

Doc.SOT233-090701

Feb.20 12 Re v.2.0