Datasheet MI3471 Datasheet (MegaPower)

P-Channel 30V (D-S)MOSFET

MI3471

General Description

This miniature surface mount MOSFET uses ad vanced Trench process,low RDS(ON ) assures minimal power

lo ss and ene rgy co nvert , wh ich m akes t his de vice ideal f or u se i n p ower m anagement c ircuit.

Applications

Load switching Low current DC-DC co nve rte rs

Small power management

Features

VD S (V)=-30V

ID (A)=-2.9A(VGS =-10V)

RD S(on) = 120 mΩ @ VGS=-10V

RD S(on) = 210 mΩ @ VGS=-4.5V

ESD Rating:3000V HBM

Low gate charge

Fast switching speed

High performance trench techn olo gy

D

.

G

Top Vi ew

S

Absolute Maximum Ratings (TA = 25℃ Unless Otherwise Not ed)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Continuous Source Current (Di ode C ond uct ion )

Power Dissipation

Operating Junction and Storag e Temperature Range

a

b

a

TA =25℃

TA =70℃

TA =25℃

TA =70℃

Symbol

VD S

VG S

ID

ID M

IS

PD

TJ ,Tstg

Thermal Resistance Ratings

Symbol

R θJA

Maximum Junction-to-Ambie nt

www.meg apo wer .com. cn

Parameter

a

t<= 10 sec

Steady-State

1

Maximum Units

-30

±20

-2.9

-2.2

-11

-1.5

1.4

0.9

-55 to 150

Maximum

90

130

Feb.20 12 Re v.2.0

V

A

W

℃

Units

℃/W

Package Outlines and Ordering Information

Device

MI3471

Device Marking

M02S

Reel Size

7’’

Specifications (TA = 25℃ Unless Otherwise Noted)

Parameter

Static

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resist anc e

Forward Tranconductance

Diode Forward Voltage

Dynamic

Input Capacitance

Output Capacitance

Reverse Tra nsf er Ca pac ita nce

Switching

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Tur n-O n Del ay Tim e

Rise Time

Tur n-O ff Delay Time

Fall-Time

Notes: a . Sur face Moun ted on 1” x 1” FR 4 Boa rd. b. Pulse w idt h limited b y maximum j unc tion temp erature

c. Pulse t est : PW <= 300us d uty cycle < = 2%.

c

Symbol

V( BR)D SS

VG S(th )

IG SS

ID SS

ID (on)

RD S(on )

g

fs

VS D

Ci ss

Co ss

Cr ss

Qg

Qg s

Qg d

td (on)

tr

td (off)

tf

Test Conditions

VG S=0V,ID=-250uA

VD S =VGS,ID = -250 u A

VD S=0V,VGS=±20V

VDS=-24V,VGS=0V

VDS=-24V,VGS=0V,TJ=85℃

VDS=-5V,VGS=-4.5V

VGS=-10V,ID=-2.9A

VGS =-4.5 V, ID =-1.7A

VD S=-5V,ID =-2.9A

IS =-1.2A,VGS=0V

VD S=-15V,VGS =0V

f=1MHz

VD S=-15V,VGS=- 10V

ID =-2.9A

VDS=-15V, ID=-2.2A,

RG=10 ohm,VGEN=-10V

Tape Width

8mm

Limits

Min Typ Max

-30

-1.3

-1.8

-11

95

155

5

-0.8

305

35

20

6.2

1.3

1.2

7

11

17

3.2

Quantity

3000 units

-2.5

±10

-1

-30

120

210

-1.1

9

14

22

32

6

MI3471

Units

V

uA

A

mΩ

S

V

pF

nC

ns

www.meg apo wer .com. cn

2

Feb.20 12 Re v.2.0

Typical Electrical and Thermal Ch aracteristics

MI3471

9

VGS =-5,-6 ,-7 ,-8,- 9,-10

8

7

6

-4V

5

4

3

-ID-Dr ain Curre nt( A)

2

-3.5V

-3V

1

0

0. 0 0. 5 1.0 1 .5 2.0 2. 5 3. 0

-VDS Drain-t o-So urce Volta ge(V )

Figure 1: Out put Chara cter istics

220

200

180

VGS =-4.5V

160

140

120

VGS =-10V

100

80

RD S(on)- On -Resi stance( mΩ)

60

40

0 1 2 3 4 5 6 7 8 9

-ID- Dra inCu rrent(A )

Figure 3 : On-R esistan ce vs Dr ain Curre nt

1. 6

ID= -25 0uA

1. 4

2. 0

VGS =-10V

1. 8

IDS =-2.9A

1. 6

1. 4

1. 2

1. 0

0. 8

0. 6

RD S(ON) -On Re sist ance

(Norma lize d)

0. 4

0. 2

0

-50 -25 0 25 5 0 75 10 0 125 150

TJ -Jun ctio n Tem peratur e(℃)

Figure 2 : On-R esistan ce vs. Junctio n Tem pera ture

RON @Tj= 25℃;9 5mΩ

240

220

200

mΩ)

(

180

e cR

an t

160

is s e

R

140

n

-O )

120

ON

(

S D

100

80

0 1 2 3 4 5 6 7 8 9 10

-VGS Gate-to -Sou rce Voltag e(V)

Figure 4 : On-R esis tance vs. Gate -to- Sou rce Vol tage

10

ID= -2. 9A

1. 2

1. 0

0. 8

0. 6

-VG S(th) Va rian ce(V)

0. 4

0. 2

0. 0

-50 -25 0 25 5 0 75 10 0 125 150

Figure 5: Thr esho ld Voltage

www.meg apo wer .com. cn

TJ- Tempe ratu er(℃)

Tj= 150℃

1

-Is-So urce C urre nt(A)

0. 1 0 0. 2 0. 4 0.6 0 .8 1.0 1. 2 1. 4 1.6

-VSD -So urce -to- Drain Volt age( V)

Figure 6: Sou rce- Drain Dio de For ward Vo lta ge

Tj= 25℃

3

Feb.20 12 Re v.2.0

Typical Electrical and Thermal Ch aracteristics

MI3471

10

( )-

8

ge lt V Vo

6

c a u e

o

-S r

4

e t -to

SG Ga

2

V

0

0 1 2 3 4 5 6 7

Qg-Total G ate Ch arge(nC )

Figur 7 :G ate Ch ange

100.0

T

=150°C

J(M ax)

T A =25°C

10.0

R

DS( ON)

limited

(A mps )

D

I

1.0

0.1s

1s

10s

0.1

1 1

DC

VDS (Volts)

Figure 9 : Max imum Forw ard Biase d Saf e

Operat ing Ar ea (Note d)

10

t n

ie n

a

e c

ive r s t T

e n

c

p da

e f

e

f

d l

E e

ma r

z d

0.1

e h T

ma i

Nor l

1

D=T on/T

T

J,P K=TA +PDM

Rθ JA=130 W℃/

.

Z

JA

θ

100 µ s

1ms

10ms

0 100

360

320

Freque ncy =1MHz

280

240

200

160

Capaci tanc e(pF )

120

80

40

Crss

0

0 5 10 15 20 25 30

-VDS Dai n-to -Source Vo ltag e(V)

Coss

Figure 8 : Capa citance

40

T

30

)

W

(

r

20

e w

o P

T A =25°C

10

0

0.001 0. 01 0.1

1 1

Pulse Wi dth ( s)

Figure 1 0: Si ngle Puls e Power Rat ing J unction -to-

Ambien t (No te d)

In desce ndi ng order D=0.5, 0 .3, 0 .1, 0.05, 0 .02, 0.01 , single pu lse

P

D

T

o n

T

Ciss

=150°C

J(M ax)

0 10 0 1000

0.01

0.00001 0.0001 0.001 0.01 0.1 1 1 0 100 1000

Pulse Wi dth ( s)

Figure 11 : Normali zed Maxim um Tra nsient Therma l Imp edance

Note d:

T A=25 °C. The SOA cu rve provi des a s ingle pul se rating .

These te sts a re perfor med with th e device mo unt ed on 1 in FR -4 bo ard with 2o z. Copper, i n a sti ll air envi ronment w ith

www.meg apo wer .com. cn

2

4

Feb.20 12 Re v.2.0

Package

SOT -23 3-Lead

MI3471

D

3

1 2

e

e1

T OP VIEW

E1 E

A

SYMBOL MIN NOM MAX

A 0.70 1.15

1.00

A1 0.00 0.13

b 0.30 0.50

c 0.20

0.08

D 2. 80 3.1 0

E 2 .60 3. 00

E1 1. 40 1.80

0.40

0.13

2.90

2.80

1.60

e 0.95 BSC

e1 1. 90 BS C

L 0 .40 0 REF

L1 0 .54 0 REF

0 º 8 º

θ

5º

b

A1

SIDE VIEW

Notes:

(1) All dimensions are i n mil lim eters. Angles in degre es. (2) Complies with JEDE C TO -23 6.

www.meg apo wer .com. cn

L1 L

END VIEW

5

Feb.20 12 Re v.2.0

c

Doc.SOT233-090701