Datasheet MI3470 Datasheet (MegaPower)

N-Channel 30V (D-S)MOSFET

MI3470

General Description

This miniature surface mount MOSFET uses ad vanced Trench process,low RDS(ON ) assures minimal power

lo ss and ene rgy co nvert , wh ich m akes t his de vice ideal f or u se i n p ower m anagement c ircuit.

Applications

Load switching Low current DC-DC co nve rte rs

Small power management

Features

VD S (V)=30V

ID (A)=4.0A(VGS=10V)

RD S(on) = 53 mΩ @ VGS=10V

RD S(on) = 84 mΩ @ VGS=4.5V

ESD Rating:3000V HBM

Low gate charge

Fast switching speed

High performance trench techn olo gy

D

.

G

Top Vi ew

S

Absolute Maximum Ratings (TA = 25℃ Unless Otherwise Not ed)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Continuous Source Current (Di ode C ond uct ion )

Power Dissipation

Operating Junction and Storag e Temperature Range

a

b

a

TA =25℃

TA =70℃

TA =25℃

TA =70℃

Symbol

VD S

VG S

ID

ID M

IS

PD

TJ ,Tstg

Maximum Units

30

±20

4.0

3.2

16

2.2

1.4

0.9

-55 to 150

V

A

W

℃

Thermal Resistance Ratings

Parameter

Maximum Junction-to-Ambie nt

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a

t<= 10 sec

Steady-State

1

Symbol

R θJA

Maximum

90

130

Feb.2012 Rev.2.0

Units

℃/W

Package Outlines and Ordering Information

Device

MI3470

Device Marking

M01S

Reel Size

7’’

Specifications (TA = 25℃ Unless Otherwise Noted)

Parameter

Static

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resist anc e

Forward Tranconductance

Diode Forward Voltage

Dynamic

Input Capacitance

Output Capacitance

Reverse Tra nsf er Ca pac ita nce

Switching

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Tur n-O n Del ay Tim e

Rise Time

Tur n-O ff Delay Time

Fall-Time

Notes: a . Sur face Moun ted on 1” x 1” FR 4 Boa rd. b. Pulse w idt h limited b y maximum j unc tion temp erature

c. Pulse t est : PW <= 300us d uty cycle < = 2%.

c

Symbol

V( BR)D SS

VG S(th )

IG SS

ID SS

ID (on)

RD S(on )

g

fs

VS D

Ci ss

Co ss

Cr ss

Qg

Qg s

Qg d

td (on)

tr

td (off)

tf

Test Conditions

VG S=0V,ID=250uA

VD S =VGS,ID = 2 50 uA

VD S=0V,VGS=±20V

VDS=24V,VGS=0V

VDS=24V,VGS=0V,TJ=85℃

VDS=5V,VGS=4.5V

VGS=10V,ID=4.0A

VGS =4. 5 V, ID=2 A

VD S=5V,ID=4.0A

IS =1. 2A,VGS =0V

VD S=25V,VGS=0V

f=1MHz

VD S=15V,VG S=10 V

ID =4. 0A

VDS=10V, ID=1.0A,

RG=10 ohm,VGEN=4.5V

Tape Width

8mm

Limits

Min Typ Max

30

1. 2

16

1. 8

44

60

15

0.8

270

55

30

6

0.8

0.5

6

10

15

3

MI3470

Quantity

3000 units

2. 4

±10

1

30

53

84

1. 3

8

12

19

30

6

Units

V

uA

A

mΩ

S

V

pF

nC

ns

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2

Feb.2012 Rev.2.0

Typical Electrical and Thermal Ch aracteristics

MI3470

20

18

16

VGS =4, 4.5,5 ,6,7, 8, 9,10

3. 5V

14

12

10

8

ID -Dr ain Curre nt( A)

6

3V

4

2

0

0. 0 0. 5 1.0 1 .5 2.0 2. 5 3. 0

VD S Drai n-to -Source Vo ltag e(V)

Figure 1: Out put Chara cter istics

2. 5V

100

90

80

70

VGS =4. 5V

60

50

40

RD S(on)- On -Resi stance( mΩ)

30

20

0 2 4 6 8 10

Figure 3 : On-R esistan ce vs Dr ain Curre nt

VGS =10V

ID - Drai nCur rent (A)

1. 6

ID= 250 uA

1. 4

1. 8

VGS =10V

1. 6

IDS =4A

1. 4

1. 2

1. 0

0. 8

0. 6

RD S(ON) -On Re sist ance

(Norma lize d)

0. 4

0. 2

0

-50 -25 0 25 5 0 75 10 0 125 150

TJ -Jun ctio n Tem peratur e(℃)

Figure 2 : On-R esistan ce vs. Junctio n Tem pera ture

RON @Tj= 25℃;5 5mΩ

140

120

Ω)

m

eR

100

stan (

R si c

80

n e

N -O

( )

60

S O

D

40

1 2 3 4 5 6 7 8 9 10

VGS G ate-to- Sour ce Voltage (V)

Figure 4 : On-R esis tance vs. Gate -to- Sou rce Vol tage

10

ID= 4A

1. 2

1. 0

0. 8

0. 6

VGS (th) Var iance(V )

0. 4

0. 2

0. 0

-50 -25 0 25 5 0 75 10 0 125 150

TJ- Tem per atue r(℃)

Figure 5: Thr esho ld Voltage

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Tj= 150℃

Tj= 25℃

1

Is-Sou rce Cu rren t(A)

0. 1 0 0. 2 0. 4 0.6 0 .8 1.0 1. 2 1. 4 1.6

VSD - Sou rce- to-D rain Volta ge(V )

Figure 6: Sou rce- Drain Dio de For ward Vo lta ge

3

Feb.2012 Rev.2.0

Typical Electrical and Thermal Ch aracteristics

MI3470

t n

ie n

a

ive r s t T

c e

f f

E e

z d

ma i

Nor l

10

VD S=15V ID= 4A

9

V

8

(

ag

7

t e )

l

6

e Vo c

5

S ur

-

4

t

-

t

3

a

S

2

G

V G e o o

1

0

0 1 2 3 4 5 6

Qg-Total G ate Ch arge(nC )

Figur 7 :G ate Ch ange

100.0

T

=150°C

J(M ax)

T A =25°C

R

10.0

DS( ON)

limited

(A mps )

D

I

1.0

0.1s 10ms

1s

10s

0.1

1 1

DC

VDS (Volts)

Figure 9 : Max imum Forw ard Biase d Saf e

Operat ing Ar ea (Note d)

10

D=T on/T

.

T

J,P K=TA +PDM

e c

e n p da e d l

ma r

0.1

e h T

1

Rθ JA=130 W℃/

Z

JA

θ

100 µ s

1ms

0 100

360

Freque ncy =1MHz

320

280

Ciss

240

200

160

Capaci tanc e(pF )

120

80

40

0

0 5 10 15 20 25 30

VD S Dain -to- Source Vol tage (V)

Coss

Crss

Figure 8 : Capa citance

40

T

30

)

W

(

r

20

e w

o P

T A =25°C

10

0

0.001 0.01 0.1

1 1

Pulse Wi dth ( s)

Figure 1 0: Si ngle Puls e Power Rat ing J unction -to-

Ambien t (No te d)

In desce ndi ng order D=0.5, 0 .3, 0 .1, 0.05, 0 .02, 0.01 , single pu lse

P

D

T

o n

T

=150°C

J(M ax)

0 1 00 1000

0.01

0.00001 0.0001 0.001 0.01 0.1 1 1 0 100 1000

Pulse Wi dth ( s)

Figure 11 : Normali zed Maxim um Tra nsient Therma l Imp edance

Note d:

These te sts a re perfor med with th e device mo unt ed on 1 in FR -4 bo ard with 2o z. Copper, i n a sti ll air envi ronment w ith

T A=25 °C. The SOA cu rve provi des a s ingle pul se rating .

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2

4

Feb.2012 Rev.2.0

Package

SOT -23 3-Lead

MI3470

D

3

1 2

e

e1

T OP VIEW

E1 E

A

SYMBOL MIN NOM MAX

A 0.70 1.15

1.00

A1 0.00 0.13

b 0.30 0.50

c 0.20

0.08

D 2 .80 3. 10

E 2.60 3.0 0

E1 1.4 0 1. 80

0.40

0.13

2.90

2.80

1.60

e 0.95 BSC

e1 1. 90 BS C

L 0 .40 0 REF

L1 0 .54 0 REF

0 º 8 º

θ

5º

b

A1

SIDE VIEW

Notes:

(1) A ll dimensions are in mil lim ete rs. A ngles in degrees. (2) C omplies with JEDEC TO-23 6.

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L1 L

END VIEW

5

Feb.2012 Rev.2.0

c

Doc.SOT233-090701